SEMTECH ELECTRONICS LTD.

1N4148
SILICON EPITAXIAL PLANAR DIODE
Fast switching diode
This diode is also available in MiniMELF case with
the type designation LL4148.
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
IO
150
IFSM
500
Rectified Current (Average)
Half Wave Rectification with Resist. Load
o
at Tamb = 25 C and f50 HZ
o
Surge Forward Current at t<1s and Tj = 25 C
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
1)
1)
mA
mA
Ptot
500
Tj
200
O
-65 to +200
O
TS
mW
C
C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
1N4148
Characteristics at Tj = 25oC
Symbol
Min.
Typ.
Max.
Unit
VF
-
-
1
V
IR
IR
IR
-
-
25
5
50
nA
µA
µA
V(BR)R
V(BR)R
100
75
-
-
V
V
Capacitance
at VF = VR = 0
Ctot
-
-
4
pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time<30ns, fp = 5 to 100 kHz
Vfr
-
-
2.5
V
Reverse Recovery Time
from IF = 10mA to IR = 1mA, VR = 6V, RL = 100Ω
trr
-
-
4
ns
Thermal Resistance
Junction to Ambient Air
RthA
-
-
0.351)
K/mW
Rectification Efficiency
at f = 100MHz, VRF = 2V
ηv
0.45
-
-
-
Forward Voltage
at IF = 10mA
Leakage Current
at VR = 20V
at VR = 75V
at VR = 20V, Tj = 150oC
Reverse Breakdown Voltage
at IR = 100μA
at IR = 5.0μA
Vo
2nF
5K
~
~
~
VRF =2V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
60
1)
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
1N4148
Dynamic forward resistance
versus forward current
Forward characteristics
mA
10
1N 4148
1N 4148
3
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
1
2V
1
10 -1
10 -2
1
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
mW
1000
1N 4148
1N 4148
Tj=25 oC
f=1MHz
900
1.1
800
P tot
10 2 mA
10
Ctot(VR )
Ctot(0V)
700
1.0
600
500
0.9
400
300
0.8
200
100
0.7
0
0
o
200 C
100
0
0
2
Tamb
4
6
8
10 V
VR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
1N4148
Leakage current
versus junction temperature
nA
10 4
1N 4148
5
2
10 3
IR
5
2
10 2
5
2
10
5
VR=20V
2
1
0
o
200 C
100
Tj
Admissible repetitive peak forward current
versus pulse duration
A
100
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4148
v=tp/T
I
5
4
3
IFRM
2
tp
10
IFRM
T=1/fp
t
v=0
T
5
4
3
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10 -5
2
5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004