AR251/ARS251 THRU AR256/ARS256 KI SEMICONDUCTOR Features BUTTON DIODES Low leakage Low forward voltage drop High current capability High forward surge current capability VOLTAGE RANGE 100 TO 600 VOLTS CURRENT 25AMPS AR .185(4.7) .165(4.2) ARS .185(4.7) .165(4.2) Mechanical Data Case: transfer molded plastic Technology: vcauum soldered Polarity: color ring denotes cathode Lead: Plated lead, solderable per MIL-STD-202E method 208C Mounting position: Any Weigth: AR 1.80 grams, ARS 1.60 grams .250(6.4) .235(6.0) .250(6.4) .235(6.0) .410(10.4) DIA .380( 9.7) .346(8.8) DIA .327(8.2) .225(5.7) DIA .215(5.5) Maximum Ratings and Electrical Charactristics .225(5.7) DIA .215(5.5) Dimensions in inches and millimeters Rating at 25oC ambient temperature unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load For capacitive load derate current by 20% Parameters Symbols Maximum repetitive peak reverse voltage Maximum RM S voltage Maximum DC blocking voltage Maximum Average rectified forward current at TC=110oC Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (JE DEC Method) VRRM VRMS VDC Rating for fusing(t<8.3ms) Maximum instantaneous forward voltage drop at 100A Maximum DC reverse current TA=25oC o at rated DC blocking voltage TA=150 C AR251 ARS251 100 70 100 AR252 ARS252 200 140 200 AR253 ARS253 300 210 300 AR254 ARS254 400 280 400 AR256 ARS256 600 420 600 Units Volts Volts Volts Io 25 Amps IFSM 400 Amps I2 t 664 A2S VF 1.1 Volts IR 5.0 uA 450 Typical thermal resistance RθJC 1.0 Operating and storage temperature TJ,TSTG -65 to +175 o C/W o C Notes: 1.Enough heatsink must be considered in application. KI SEMICONDUCTOR AR251 THRU AR256 ARS251 THRU ARS256 Ratings and Characteristic Curves KI SEMICONDUCTOR