DB201S THRU DB207S KI SEMICONDUCTOR Features • • • • • • • Surface Mount Package Glass Passivated Diode Construction High Surge Current Capability Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) Halogen free available upon request by adding suffix "-HF" 2 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts DBS Maximum Ratings • • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C UL Recognized File # E165989 Catalog Number DB201S DB202S DB203S DB204S DB205S DB206S DB207S Device Marking DB201S DB202S DB203S DB204S DB205S DB206S DB207S Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V B Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V + ∼ ∼ D C K Notch in Case A G E H DIMENSIONS Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Rating For Fusing Notes: IF(AV) 2.0 A TA = 40°C IFSM 60A 8.3ms, half sine VF 1.2V IF = 2.0A; TA = 25°C IR CJ I2t 10µA 0.5mA TJ = 25°C TJ = 125°C Measured at 1.0MHz, VR=4.0V 14.9A2s t<8.3ms DIM A B C D E G H K INCHES MIN .316 .245 .040 .360 .102 .003 .195 .038 MAX .335 .255 .060 .410 .130 .013 .205 .047 MM MIN 8.05 6.20 1.02 9.40 2.60 .076 5.00 1.00 NOTE Suggested Solder Pad Layout .047” 25pF 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7 MAX 8.51 6.50 1.50 10.4 3.30 .330 5.20 1.20 . .344” .060” . .205” KI SEMICONDUCTOR DB201S thru DB207S FIG.1-DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0 100 50 60 50 40 30 T A=25 SINGLE SINE-WAVE JEDEC METHOD 20 10 0 10 1 150 FIG.4-TYPICAL FORWARD CHARACTERISTICS FIG.3-TYPICAL JUNCTION CAPACITANCE 100 INSTANTANEOUS FORWARD CURRENT,(A) 10 10 TJ=25,f=1MHZ 1.0 1.0 0.1 T J=25 PULSE WIDTH:300us 2% DUTY CYCLE 0.01 0.1 1.0 4.0 10.0 100 0 REVERSE VOLTAGE,(VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5-TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT,(µA) CAPACITANCE(pF) 100 NUMBER OF CYCLES AT 60HZ AMBIENT TEMPERATURE , T J=125 10 1.0 T J=25 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) KI SEMICONDUCTOR