BAS19/BAS20 Switching Diode SOT-23 Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Marking: BAS19 BAS20 JP JR Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol BAS19 BAS20 Unit 100 150 V Non-Repetitive Peak reverse voltage VRM DC Blocking Voltage VR Average Rectified Output Current IO 200 mA Power Dissipation Pd 250 mW RθJA 500 ℃/W TJ 150 ℃ TSTG -65-150 ℃ Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage BAS19 BAS20 BAS19 Reverse voltage leakage current BAS20 unless otherwise Symbol Test V(BR) R IR= 100µA IR specified) conditions MIN MAX 100 V 150 VR=100V VR=150V UNIT 0.1 µA 1 1.25 V VF IF=100mA IF=200mA Junction Capacitance CJ VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR 50 nS Forward voltage http://www.luguang.cn mail:[email protected] BAS19/BAS20 Switching Diode Typical Characteristics http://www.luguang.cn mail:[email protected]