BAW56T/BAV70T/BAV99T Switching Diode SOT-523 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Dimensions in inches and (millimeters) BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Reverse voltage VR 85 V Forward current IO 75 mA Forward power dissipation PD 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -65~150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test conditions MIN MAX 85 UNIT V(BR) IR= 1μA V IR1 VR=75V 2 μA IR2 VR=25V 0.03 μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0 1.5 pF Reverse recovery time t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω 4 nS Reverse voltage leakage current http://www.luguang.cn f=1MHz mail:[email protected] BAW56T/BAV70T/BAV99T Switching Diode Typical Characteristics http://www.luguang.cn mail:[email protected]