UF1A THRU UF1M 50V-1000V 1.0A SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS FEATURES For surface mounted applications Low profile package Built-in strain relief Easy pick and place Ultrafast recovery times for high efficiency Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated junction High temperature soldering 260oC/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214ACmolded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard Packaging: 12mm tape (EIA-481) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol UF1A UF1B UF1D UF1G Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ T A =25 o C at Rated DC Blocking Voltage @ T A =125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) V RRM V RMS V DC 50 35 50 100 70 100 200 140 200 400 280 400 UF1J 600 420 600 UF1K UF1M 800 560 800 Units 1000 700 1000 V V V I(AV) 1.0 A IFSM 30 A VF 1.0 V 5.0 150 IR Trr Cj 1.7 50 75 17 60 15 -55 to + 150 R θJA R θJL uA uA nS pF o C/W o Operating/Storage Temperature Range T J, T STG C 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from junction to ambient and from Junction to Lead length .375” (9.5mm), Mounted on 0.2” x 0.2” (5mm x 5mm) Cu pads. E-mail: [email protected] 1 of 2 Web Site: www.taychipst.com UF1A THRU UF1M 50V-1000V 1.0A SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Noninductive 10 Noninductive trr +0.5A (+) 25 Vdc (approx) ( ) ( ) D.U.T. PULSE GENERATOR NOTE 2 1 NONInductive 0 -0.25 (+) OSCILLOSCOPE NOTE 1 NOTES:1. Rise Time=7ns max. Input Impedance=1 megohm. 22pF 2. Rise Time=10ns max. Source Impedance=50 Ohms. -1.0 SET TIME BASE FOR 10ns/cm 1cm Fig. 3 - TYPICAL JUNCTION CAPACITANCE Fig. 2 - FORWARD CHARACTERISTICS 100 JUNCTION CAPACITANCE, pF 10 US1A US1G US1K TYPICAL IFM, Apk 1.0 0 TJ=25 C 0.1 0 TJ=25 C f=1.0MHz Vsig=50mVp-p 10 1 0.1 1 10 100 REVERSE VOLTAGE, VOLTS .01 0 .2 .4 .6 .8 1.0 1.2 1.4 Fig. 5 - PEAK FORWARD SURGE CURRENT 30 25 2.0 SINGLE PHASE HALF W AVE 60HZ RESISTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.315x0.315"(8.0x8.0mm) COPPER PAD AREAS 1.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES Fig. 4 - FORWARD CURRENT DERATING CURVE 8.3ms SINGLE HALF SINCE-WAVE JEDEC METHOD 20 15 10 5 25 50 75 100 125 150 175 LEAD TEMPERATURE, oC 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com