US1A thru US1M SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 AMPERES SMA/DO-214AC .055(1.40) .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203) .188(4.80) .208(5.28) Dimensions in inches and (millimeters) FEATURES MECHANICAL DATA Glass passivated chip Ultra fast switching for high efflciency For surface mount applications Low forward voltage drop and high current capability Low reverse leakage current Plastic material UL flammability classification 94V-0 High temperature soldering 260oC/10seconds at terminals Pb free product are available 99% Sn above can meet RoHS Environment substance directive request Case JEDEC DO-214AC molded plastic Case Molded plastic Polarity Indicated by cathode band Weight 0.002 ounce, 0.064grams MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load For capacitive load, derate current by 20% SYMBOL US1A US1B US1D US1G US1J US1K US1M UNITS Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 0 Volts Maximum Average Forward Rectified Current @ TL =75 C I(AV) 1.0 Amps Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 30 Amps Maximum Forward Voltage at 1.0A DC VF 1.0 1.3 0 Maximum DC Reverse Current @TJ=25 C at Rated DC Blocking Voltage @TJ=1000C 1.5 1.7 Volts 10 100 IR A Maximum Reverse Recovery Time (NOTE 1) CJ 20 10 pF Typical Junctionn Capacitance (NOTE 2) TRR 50 75 nS Typical Thermal Resistance (NOTE 3) Operating Temperature Rang Storage Temperature Range R 30 JC C/W TJ -55 to +150 0 TSTG -55 to +150 0 NOTES 1. Measured at 1 MHz and applied reverse Voltag of 4.0VDC 2. Rverse Recovery Test Condibons IF = 5A, I R = 1A, l RR = 25A 3. Thermal Resistance from Junction amblent and from Junction to lead 0.375 www.paceleader.tw 0 1 (9.5mm) P.C.B mounted C C US1A thru US1M SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Noninductive 10 Noninductive trr +0.5A (+) 25 Vdc (approx) ( ) ( ) D.U.T. PULSE GENERATOR NOTE 2 1 NONInductive 0 -0.25 (+) OSCILLOSCOPE NOTE 1 NOTES:1. Rise Time=7ns max. Input Impedance=1 megohm. 22pF 2. Rise Time=10ns max. Source Impedance=50 Ohms. -1.0 SET TIME BASE FOR 10ns/cm 1cm Fig. 2 - FORWARD CHARACTERISTICS 10 Fig. 3 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERES US1A US1G US1M TYPICAL IFM. Apk 1.0 TJ=250C 0.1 2.0 SINGLE PHASE HALF W AVE 60HZ RESISTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.315x0.315"(8.0x8.0mm) COPPER PAD AREAS 1.0 25 .01 0 .2 .4 .6 .8 1.0 50 75 100 125 150 175 o LEAD TEMPERATURE, C 1.2 1.4 Fig. 4 - TYPICAL JUNCTION CAPACITANCE Fig. 5 - PEAK FORWARD SURGE CURRENT 0 TJ=25C f=1.0MHz Vsig=50mVp-p 30 25 10 1 0.1 1 10 100 PEAK FORWARD SURGE CURRENT, AMPERES JUNCTION CAPACITANCE, pF 100 8.3ms SINGLE HALF SINCE-WAVE JEDEC METHOD 20 15 10 REVERSE VOLTAGE, VOLTS 5 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz www.paceleader.tw 2 50 100