Product specification 1N4148 DO-35 ■ Features ● Fast Switching Speed 1.0 2(26.0) MIN. ● General Purpose Rectification 0.079(2.0) MAX ● Silicon Epitaxial Planar Construction 0.157 (4.0) MAX 1.0 2(26.0) MIN. 0.024(0.60) MAX Dimensions in inches and (millimeters) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Non-Repetitive Peak Reverse Voltage Symbol Rating Unit VRM 100 V 75 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR VR(RMS) 53 V Forward Continuous Current * RMS Reverse Voltage IFM 300 mA Average Rectified Output Current * IO 150 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0ìs IFSM @ t = 1.0s Power Dissipation * PD Operating and Storage Temperature Range A A 500 mW 1.68 mW/℃ RèJA 300 K/W Tj,TSTG -65 to +175 ℃ Derate Above 25℃ Thermal Resistance Junction to Ambient Air * 2.0 1.0 * Valid provided that device terminals are kept at ambient temperature. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Forward voltage VF Peak Reverse Current IR Max Unit IF=10mA Testconditons Min Typ 1.0 V VR = 75 V 5 μA VR = 20 V, Tj = 150 ℃ 30 μA VR = 20V 25 nA Capacitance CJ VR = 0,f=1.0MHz 4.0 pF Reverse recovery time trr IF = 10 mA IR = 1 mA, VR = 6 V, RL = 100 Ù 4.0 ns ■ Marking Marking 1N4148 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 1N4148 1000 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Typical Characteristics Tamb = 25 , unless otherwise specified 10 1.0 0.1 1000 100 10 VR = 20V 1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics http://www.twtysemi.com [email protected] 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2, Leakage Current vs Junction Temperature 4008-318-123 2 of 2