TYSEMI 2SA1434

Product specification
2SA1434
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Adoption of FBET process.
0.4
3
(VCE(sat) 0.5V).
1
2
+0.1
0.95-0.1
+0.1
1.9-0.1
15V).
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High VEBO (VEBO
0.55
Low collector-to-emitter saturation voltage
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current gain (hFE=500 to 1200).
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-15
V
Collector current
IC
-100
mA
Collector current (pulse)
Icp
-200
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -40V, IE=0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -10V, IC=0
-0.1
ìA
DC current gain
hFE
VCE = -5V , IC = -10mA
fT
VCE = -10V , IC = -10mA
100
MHz
Cob
VCB = -10V , f = 1.0MHz
4.8
pF
Gain bandwidth product
Output capacitance
Testconditons
Min
500
Typ
800
1200
Collector-emitter saturation voltage
VCE(sat) IC = -50mA , IB = -1mA
-0.2
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC = -10ìA , IB = -1mA
-0.8
-1.1
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-15
V
Marking
Marking
FL
1
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4008-318-123
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