SMD Type Type SMD IC Product specification 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High VEBO (VEBO 25V). 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High reverse hFE (150 typ). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small ON resistance [Ron=1W (IB=5mA)]. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 500 mA Collector current (pulse) ICP 800 mA Base current IB 100 mA Collector dissipation PC 250 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Type SMD IC Product specification 2SC4695 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 20V, IC=0 0.1 ìA DC current gain hFE VCE = 5V , IC = 10mA fT VCE = 10V , IC = 10mA 250 MHz Cob VCB = 10V , f = 1.0MHz 3.6 pF Gain bandwidth product Output capacitance Testconditons Min Typ 300 1200 Collector-emitter saturation voltage VCE(sat) IC = 100mA , IB = 2mA 0.12 0.5 V Base-emitter saturation voltage VBE(sat) IC = 100mV , IB = 2mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 50 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 25 V Turn-on time ton 135 ns Storage time tstg 450 ns tf 100 ns Fall time Marking Marking WT http://www.twtysemi.com [email protected] 4008-318-123 2 of 2