TYSEMI 2SA1724

SMD Type
Product specification
2SA1724
Features
High fT (fT = 1.5GHz typ).
High Current (IC = 300mA).
Adoption of FBET process.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-3
V
Collector Current
IC
-300
mA
Collector Current (Pulse)
ICP
-600
mA
PC
500
PC *
1300
Tj
150
Tstg
-55 to +150
Collector Power Dissipation
Jumction temperature
Storage temperature Range
mW
2
* Mounted on ceramic board (250 mm x 0.8 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector Cut-off Current
ICBO
VCB = -20V , IE = 0
Emitter Cut-off Current
IEBO
VEB = -2V , IC = 0
DC Current Gain
hFE
Min
VCE = -5V , IC = -50mA
15
VCE = -5V , IC = -300mA
5
Typ
Max
Unit
-0.1
ìA
-0.1
ìA
100
Collector-Emitter Saturation Voltage
VCE(sat) IC = -100mA , IB = -10mA
-0.4
-1.0
V
Base-Emitter Saturation Voltage
VBE(sat) IC = -100mA , IB = -10mA
-0.9
-1.2
V
VCE = -5V , IC = -100mA
1.5
GHz
Collector Output Capacitance
Cob
VCB = -10V , IE = 0 , f = 1MHz
4.9
pF
Reverse Transfer Capacitance
Cre
VCB = -10V , IE = 0 , f = 1MHz
4.4
pF
Transition Frequency
fT
Marking
Marking
AJ
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
SMD Type
Product specification
2SA1724
Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
2of 3
SMD Type
Product specification
2SA1724
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3