SMD Type Product specification 2SA1724 Features High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -3 V Collector Current IC -300 mA Collector Current (Pulse) ICP -600 mA PC 500 PC * 1300 Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range mW 2 * Mounted on ceramic board (250 mm x 0.8 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector Cut-off Current ICBO VCB = -20V , IE = 0 Emitter Cut-off Current IEBO VEB = -2V , IC = 0 DC Current Gain hFE Min VCE = -5V , IC = -50mA 15 VCE = -5V , IC = -300mA 5 Typ Max Unit -0.1 ìA -0.1 ìA 100 Collector-Emitter Saturation Voltage VCE(sat) IC = -100mA , IB = -10mA -0.4 -1.0 V Base-Emitter Saturation Voltage VBE(sat) IC = -100mA , IB = -10mA -0.9 -1.2 V VCE = -5V , IC = -100mA 1.5 GHz Collector Output Capacitance Cob VCB = -10V , IE = 0 , f = 1MHz 4.9 pF Reverse Transfer Capacitance Cre VCB = -10V , IE = 0 , f = 1MHz 4.4 pF Transition Frequency fT Marking Marking AJ http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 SMD Type Product specification 2SA1724 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2of 3 SMD Type Product specification 2SA1724 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3