SMD Type Product specification 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Current (Pulse) ICP 400 mA Collector Power Dissipation PC * 1.3 W Jumction temperature Storage temperature Range Tj 150 Tstg -55 to +150 * Mounted on ceramic board (250 mm2 x 0.8 mm) Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Symbol Testconditons ICBO VCB = 300V , IE = 0 IEBO VEB = 4V , IC = 0 Min Typ Max Unit 0.1 A 0.1 A Collector-Base Breakdown Voltage V(BR)CBO IC = 10uA , IE = 0 400 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA , RBE = 400 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10uA , IC = 0 DC Current Gain hFE VCE = 10V , IC = 50mA Collector-Emitter Saturation Voltage VCE(sat) IC = 50mA , IB = 5mA Base-Emitter Saturation Voltage VBE(sat) IC = 50mA , IB = 5mA Gain-Bandwidth Product fT 5 V 60 200 0.8 1 V V VCE = 30V , IC = 10mA 70 MHz Collector Output Capacitance Cob VCB = 30V , IE = 0 , f = 1MHz 5 pF Reverse Transfer Capacitance Cre VCB = 30V , IE = 0 , f = 1MHz 4 pF Turn-On Time ton Turn-Off Time toff http://www.twtysemi.com See Test Circuit. [email protected] 0.25 ìs 5.0 4008-318-123 1 of 3 SMD Type Product specification 2SC4548 Test Circuit hFE Classification CN Marking Rank hFE D 60 E 120 100 200 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification 2SC4548 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3