TYSEMI 2SC2982

SMD Type
Product specification
2SC2982
Features
Low Saturation Voltage
: VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA)
Small Flat Package
Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
2
A
Collector Current (Pulsed) *1
ICP
4
A
Base Current (DC)
IB
0.4
A
Base Current (Pulse) *1
IBP
0.8
A
PC
500
PC *2
1000
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Tj
150
Tstg
-55 to +150
mW
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on a ceramic substrate (250 mm2 x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
A
Collector Cut-off Current
ICBO
VCB = 30V , IE = 0
0.1
Emitter Cut-off Current
IEBO
VEB = 6V , IC = 0
0.1
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 10mA , IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 1mA , IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
hFE
VBE
Transition Frequency
fT
Collector Output Capacitance
140
VCE = 1V , IC = 2A
70
Cob
A
V
6
VCE = 1V , IC = 0.5A
VCE(sat) IC = 2A , IB = 50mA
Base-Emitter Voltage
10
V
600
140
0.2
0.5
V
VCE = 1V , IC = 2A
0.86
1.5
V
VCE = 1V , IC = 0.5A
150
MHz
VCB = 10V , IE = 0 , f = 1MHz
27
pF
1
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
SMD Type
Product specification
2SC2982
hFE Classification
S
Marking
Rank
hFE
A
140
B
240
200
C
330
300
D
450
420
600
Electrical Characteristics Curves
2
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2