Transistors SMD Type Medium Power Amplifier Applications 2SC2982 Features Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 2 A Collector Current (Pulsed) *1 ICP 4 A Base Current (DC) IB 0.4 A Base Current (Pulse) *1 IBP 0.8 A PC 500 PC *2 1000 Collector Power Dissipation Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range mW *1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max) *2 Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit A Collector Cut-off Current ICBO VCB = 30V , IE = 0 0.1 Emitter Cut-off Current IEBO VEB = 6V , IC = 0 0.1 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA , IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA , IC = 0 DC Current Gain Collector-Emitter Saturation Voltage hFE VBE Transition Frequency fT Collector Output Capacitance 140 VCE = 1V , IC = 2A 70 Cob A V 6 VCE = 1V , IC = 0.5A VCE(sat) IC = 2A , IB = 50mA Base-Emitter Voltage 10 V 600 140 0.2 0.5 V VCE = 1V , IC = 2A 0.86 1.5 V VCE = 1V , IC = 0.5A 150 MHz VCB = 10V , IE = 0 , f = 1MHz 27 pF www.kexin.com.cn 1 Transistors SMD Type 2SC2982 hFE Classification S Marking Rank hFE A 140 B 240 200 Electrical Characteristics Curves 2 www.kexin.com.cn C 330 300 D 450 420 600