TYSEMI 2SC3606

Transistors
IC
SMD Type
Product specification
2SC3606
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
1
0.55
Low noise figure, high gain.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
IC
80
mA
Collector current
Base current
IB
40
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to 125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
ìA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
ìA
DC current gain
hFE
VCE = 10 V, IC =20mA
250
V
Collector output capacitance
Cob
Reverse transfer capacitance
Cre
Transition frequency
fT
30
10
VCB=10V,IE=0,f=1MHz,
0.7
VCE =10 V, IC =20 mA
5
2
|S21e| (1) VCE =10 V, IC =20 mA, f =500 MHz
Insertion gain
|S21e| 2 (2) VCE = 10 V, IC = 20 mA, f =1 GHz
Noise figure
NF (1)
VCE =10 V, IC = 5 mA, f = 500 MHz
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
7.5
pF
1.15
pF
7
GHz
16.5
dB
11
dB
1
dB
1.1
2
dB
Marking
Marking
MH
http://www.twtysemi.com
[email protected]
4008-318-123
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