TYSEMI 2SC4249

Transistors
Transistors
IC IC
IC
SMD
SMD Type
Type
Product specification
2SC4249
Features
High gain: Gpe = 24dB (typ.) (f = 200 MHz)
Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
Excellent forward AGC characteristics
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
3
V
IC
20
mA
Collector current
Base current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 25 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 2 V, IC = 0
100
nA
Collector-emitter breakdown voltage
Testconditons
V(BR)CEO IC = 1 mA, IB = 0
DC current gain
hFE
VCE = 10 V, IC = 2 mA
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
Transition frequency
fT
Power gain
Min
Gpe
Noise figure
NF
AGC voltage
VAGC
Typ
30
60
VCE = 10 V, IC = 2 mA
VCC = 12 V, VAGC = 1.4 V,f = 200 MHz
VCC = 12 V, GR = 30dB, f = 200 MHz
V
150
300
0.35
0.5
400
650
20
24
3.6
pF
MHz
28
dB
2.0
3.2
dB
4.4
5.1
V
Marking
Marking
HD
http://www.twtysemi.com
[email protected]
4008-318-123
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