TYSEMI 2SD1254

Transistors
SMD Type
Product specification
2SD1254
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Low collector-emitter saturation voltage VCE(sat).
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Large collector current IC.
+0.15
0.50 -0.15
Satisfactory linearity of forward current transfer ratio hFE.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
130
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
30
W
1.3
W
Collector power dissipation
PC
Ta = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Collector-emitter voltage
VCEO
IC = 10 mA, IB = 0
Collector-base cutoff current
ICBO
VCB = 100 V, IE = 0
10
ìA
Emitter-base cutoff current
IEBO
VEB = 5 V, IC = 0
50
ìA
Forward current transfer ratio
hFE
Forward current transfer ratio
80
Unit
VCE = 2 V, IC = 0.5 A
60
VCE = 2 V, IC = 0.1 A
45
V
260
Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter saturation voltage
VBE(sat) IC = 2 A, IB = 0.1 A
1.5
V
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
Transition frequency
ton
fT
IC=0.5A
0.5
ìs
Storage time
tstg
IB1=-IB2=50 mA
2.5
ìs
VCC=50V
0.15
ìs
Fall time
tf
hFE Classification
Rank
R
Q
P
hFE
60 120
90 180
130 260
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