Transistors SMD Type Product specification 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE(sat). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Large collector current IC. +0.15 0.50 -0.15 Satisfactory linearity of forward current transfer ratio hFE. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 130 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Peak collector current ICP 6 A 30 W 1.3 W Collector power dissipation PC Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Collector-emitter voltage VCEO IC = 10 mA, IB = 0 Collector-base cutoff current ICBO VCB = 100 V, IE = 0 10 ìA Emitter-base cutoff current IEBO VEB = 5 V, IC = 0 50 ìA Forward current transfer ratio hFE Forward current transfer ratio 80 Unit VCE = 2 V, IC = 0.5 A 60 VCE = 2 V, IC = 0.1 A 45 V 260 Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.1 A 0.5 V Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.1 A 1.5 V VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time Transition frequency ton fT IC=0.5A 0.5 ìs Storage time tstg IB1=-IB2=50 mA 2.5 ìs VCC=50V 0.15 ìs Fall time tf hFE Classification Rank R Q P hFE 60 120 90 180 130 260 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1