Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE(sat). Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Large collector current IC. +0.15 0.50 -0.15 Satisfactory linearity of forward current transfer ratio hFE. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SD1257 VCBO 2SD1257A Collector-emitter voltage 2SD1257 VCEO 2SD1257A Emitter-base voltage VEBO Rating Unit 130 V 150 V 80 V 100 V 7 V Collector current IC 7 A Peak collector current ICP 15 A 1.3 W 40 W Collector power dissipation Ta = 25 PC Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD1257,2SD1257A Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage 2SD1257 Testconditons Typ Max 80 Unit V VCEO IC = 10 mA, IB = 0 Collector-base cutoff current ICBO VCB = 100 V, IE = 0 10 ìA Emitter-base cutoff current IEBO VEB = 5 V, IC = 0 50 ìA 2SD1257A Forward current transfer ratio 100 hFE Forward current transfer ratio VCE = 2 V, IC = 3 A 90 VCE = 2 V, IC = 0.1A 45 V 260 Collector-emitter saturation voltage VCE(sat) IC = 5 A, IB = 0.25 A 0.5 V Base-emitter saturation voltage VBE(sat) IC = 5 A, IB = 0.25 A 1.5 V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC=3A 0.5 ìs Storage time tstg IB1=-IB2=0.3 A 1.5 ìs VCC=50V 0.1 ìs Fall time tf hFE Classification 2 Min Rank Q P hFE 90 180 130 260 www.kexin.com.cn