TYSEMI BAR81

Product specification
BAR81
Unit: mm
Features
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
A bsolute M axim um R atings T a = 25
S ym bol
V alue
U nit
D iode revers e voltage
P aram eter
VR
30
V
F orw ard c urrent
IF
100
mA
Tj
150
O perating tem perature range
Junction tem perature
T op
-55 to + 125
S torage tem perature
T stg
-55 to + 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Reverse current
IR
V R = 20 V
Forward voltage
VF
IF = 100 mA
Diode capacitance
CT
Forward resistance
rf
Series inductance chip to ground
LS
Min
Typ
Max
Unit
20
nA
1
V
0.93
V R = 1 V, f = 1 MHz
0.6
V R = 3 V, f = 1 MHz
0.57
IF = 5 mA, f = 100 MHz
0.7
1.5
pF
nH
Marking
Type
BAR81
Marking
BBs
http://www.twtysemi.com
[email protected]
4008-318-123
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