BAR81 Silicon RF Switching Diodes 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 V Forward current IF 100 mA Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Value Unit Aug-21-2001 BAR81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - 0.93 1 V DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.6 - VR = 3 V, f = 1 MHz - 0.57 - rf - 0.7 - Ls - 0.15 - nH Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 2 Aug-21-2001