TYSEMI BAT760

Product specification
BAT760
SOD-323
Unit: mm
■ Features
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
+0.1
1.3-0.1
● Very Low Forward Voltage Drop
● Guard Ring Construction for Transient Protection
● High Conductance
+0.1
2.6-0.1
1.0max
0.375
+0.05
0.1-0.02
0.475
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Peak repetitive reverse voltage
V RRM
Working peak reverse voltage
V RWM
Rating
Unit
30
V
DC blocking voltage
VR
RMS reverse voltage
V R(RMS)
21
V
IO
1
A
IF SM
5.5
A
PD
235
mW
Typical Thermal Resistance Junction to Ambient (Note 1)
R θJ A
426
℃/W
Operating and storage temperature range
Tj ,Ts tg
-65 to +125
℃
Average rectified output current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Power dissipation (Note 1)
Note: 1. Part mounted on FR-4 PC board with recommended pad layout
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse Breakdown Voltage
Symbol
Testconditons
Min
Typ
IR = 500μA
VF
IF = 100mA
0.35
IF = 1A
0.55
30
Leakage current (Note 2)
Junction Capacitance
IR
CJ
0.27
V R = 5V
10
V R =8V
20
V R =15V
50
V R = 5V, f = 1.0MHz
Unit
V
IF = 10mA
Forwarad voltage
Max
V (BR)R
25
V
μA
pF
Note: 2. Short duration test pulse used to minimize self-heating effect.
■ Marking
Mariking
SL
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Product specification
BAT760
■ Typical Characteristics
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
2.0
1.5
1.0
0.5
10
1
TA = 100ºC
TA = 125ºC
0.1
TA = 75ºC
TA = 25ºC
0.01
TA = 0ºC
TA = -65ºC
0.001
0
0
25
50
75
100
125
150
0
0.2
0.6
0.4
0.8
1.0
TT, TERMINAL TEMPERATURE (° C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve
Fig. 2 Typical Forward Characteristics
60
10000
f = 1MHz
TA = 125ºC
1000
CT, TOTAL CAPACITANCE (pF)
50
TA = 100ºC
100
TA = 75ºC
10
TA = 25ºC
1
TA = 0ºC
0.1
0.01
TA = -65ºC
0.001
0.0001
40
30
20
10
0
0
10
20
30
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
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0
5
10
15
20
VR , REVERSE VOLTAGE (V)
Fig. 4 Typ. Total Capacitance vs Reverse Voltage
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