TYSEMI BYV26E

Product specification
BYV26E
■ Features
● Low leakage current
● Excellent stability
● Guaranteed avalanche energy
absorption capability
● High maximum operating temperature
DO41
■ Absolute Maximum Ratings Ta = 25℃
Parameter
repetitive peak reverse voltage
Symbol
Rating
Unit
V RRM
1000
V
continuous reverse voltage
VR
1000
V
average forward current *1
IF(AV)
1.00
A
average forward current *2
IF(AV)
0.65
A
repetitive peak forward current
IFR M
10.0
A
non-repetitive peak forward current *3
IF SM
30
A
non-repetitive peak reverse avalanche energy *4
ERSM
10
mJ
storage temperature
Ts tg
-65 to +175
℃
junction temperature
Tj
-65 to +175
℃
thermal resistance from junction to tie-point (lead length
= 10 mm)
Rth j-tp
46
℃/W
thermal resistance from junction to ambient *5
Rth j-a
100
℃/W
*1 Ttp = 85 ℃ ; lead length = 10 mm;
*2 Tamb = 60 ℃; PCB mounting,averaged over any 20 ms period
*3 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = V RRMmax
*4 IR = 400 mA; Tj = Tj max prior to surge; inductive load switched off
*5 Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥ 40 μm,
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4008-318-123
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Product specification
BYV26E
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Forward voltage
VF
Reverse avalanche breakdown voltage
V (BR)R
Reverse current
IR
Testconditons
I R = 0.1 mA
Unit
1.3
V
1100
V
5
150
75
I F = 0.5 A to IR = 1A;
measured at IR = 0.25 A
Diode capacitance
Cd
f = 1 MHz; V R = 0 V
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Max
V R = V RRMmax;Tj = 165 ℃
trr
dIR/dt
Typ
V R = V RRMmax
Reverse recovery time
Maximum slope of reverse recovery current
Min
I F = 1 A; Tj = Tj max
40
when switched from,I F = 1 A to VR ≥
30 V and dIF/dt = -1 A/μs
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μA
ns
pF
6
A/μs
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