TYSEMI BAV70

Product specification
KAV70(BAV70)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High switching speed: max.4 ns
1
0.55
Small plastic SMD package
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Repetitive peak forward current: max. 450 mA
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VRRM
85
V
VR
75
V
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current (single diode loaded *)
215
IF
(double diode loaded *)
Repetitive peak forward current
IFRM
Non-repetitive peak forward current (Tj = 25
mA
125
450
mA
4
) t=1us
IFSM
t = 1ms
1
t = 1s
A
0.5
PD
250
mW
thermal resistance from junction to tie-point
Rth j-tp
360
K/W
thermal resistance from junction to ambient *
Rth j-a
500
K/W
Storage temperature
Tst g
-65 to +150
Junction temperature
Tj
150
power dissipation (Tamb = 25
) *
* Device mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
trr
forward recovery voltage
Vf r
Max
Unit
IF = 1 mA
Conditions
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
VR = 25 V
1.25
30
nA
VR = 75 V
2.5
A
VR = 25 V; Tj = 150
60
A
VR = 75 V; Tj = 150
100
A
f = 1 MHz; VR = 0 V;
1.5
pF
4
ns
1.75
V
when switched from IF =10 mA to IR = 10 mA;
RL = 100
; measured at IR = 1 mA;
when switched from IF =10 mA; tr = 20 ns;
Marking
Marking
A4
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Product specification
KAV70(BAV70)
Typical Characteristics
Device mounted on an FR4 printed-circuit board.
(1) Tj = 150
; typical values.
(2) Tj = 25
; typical values.
(3) Tj = 25
; maximum values.
Fig.1Maximum permissible continuous forward
current as a function of ambient
Fig.2 Forward current as a function of forward
voltage.
temperature.
Based on square wave currents.
Tj = 25
prior to surge.
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
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Product specification
KAV70(BAV70)
f = 1 MHz; Tj = 25
Fig.4 Reverse current as a function of junction
temperature.
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Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
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