TYSEMI ES1C

Product specification
KS1A THRU KS1D
(ES1A THRU ES1D)
DO-214AC(SMA)
Features
Unit: mm
3.93
3.73
4.597
3.988
For surface mount applications
1.575
1.397
Low profile package
1
2
2.896
2.489
1.67
1.47
Ideally suited for use in
2.38
2.18
5.49
5.29
5.283
4.775
very high frequency switching power supplies,
inverters and as a free wheeling diodes
Recommended
Land Pattern
2.438
1.981
Ultrafast recovery times for high efficiency
Low forward voltage
0.203
0.051
1.524
0.762
Low leakage current
0.305
0.152
Glass passivated chip junction
Absolute Maximum Ratings TA=25
Characteristic
Symbol
KS1A
KS1B
KS1C
KS1D
Unit
Maximum recurrent peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TL=25
I(AV)
1
A
IFSM
30
A
VF
0.92
V
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current at rated
TA= 25
5
IR
100
TA= 100
Maximum reverse recovery time *1
Reverse recovery time
TA= 100
Maximum stored charge
15
trr
TA= 25
trr
35
*3
TA= 25
TA= 100
25
Qrr
*3
Typical junction capacitance *2
CJ
Maximum thermal resistance *1
Operating and storage temperature range
10
25
7
ns
ns
nC
pF
R
JA
85
R
JL
35
TJ, TSTG
uA
/W
-55 to 150
*1 Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,Irr=0.25A
*2 Measured at 1.0MHz and applied reverse voltage of 4.0V
*3 trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/ms, Irr =10% IRM for measurement of trr
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