Product specification KS1A THRU KS1D (ES1A THRU ES1D) DO-214AC(SMA) Features Unit: mm 3.93 3.73 4.597 3.988 For surface mount applications 1.575 1.397 Low profile package 1 2 2.896 2.489 1.67 1.47 Ideally suited for use in 2.38 2.18 5.49 5.29 5.283 4.775 very high frequency switching power supplies, inverters and as a free wheeling diodes Recommended Land Pattern 2.438 1.981 Ultrafast recovery times for high efficiency Low forward voltage 0.203 0.051 1.524 0.762 Low leakage current 0.305 0.152 Glass passivated chip junction Absolute Maximum Ratings TA=25 Characteristic Symbol KS1A KS1B KS1C KS1D Unit Maximum recurrent peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL=25 I(AV) 1 A IFSM 30 A VF 0.92 V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated TA= 25 5 IR 100 TA= 100 Maximum reverse recovery time *1 Reverse recovery time TA= 100 Maximum stored charge 15 trr TA= 25 trr 35 *3 TA= 25 TA= 100 25 Qrr *3 Typical junction capacitance *2 CJ Maximum thermal resistance *1 Operating and storage temperature range 10 25 7 ns ns nC pF R JA 85 R JL 35 TJ, TSTG uA /W -55 to 150 *1 Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,Irr=0.25A *2 Measured at 1.0MHz and applied reverse voltage of 4.0V *3 trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/ms, Irr =10% IRM for measurement of trr http://www.twtysemi.com [email protected] 4008-318-123 1 of 1