2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 1 EMITTER TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. MARKING DIAGRAM 2N 3906 ALYWG G A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 4 1 Publication Order Number: 2N3906/D 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc (IE = 10 mAdc, IC = 0) OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 60 80 100 60 30 − − 300 − − − Emitter −Base Breakdown Voltage ON CHARACTERISTICS (Note 2) DC Current Gain Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) − − 0.25 0.4 Vdc Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 0.65 − 0.85 0.95 Vdc fT 250 − MHz SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10− 4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB td − 35 ns Rise Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts − 225 ns Fall Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 75 ns Noise Figure SWITCHING CHARACTERISTICS Delay Time 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. http://onsemi.com 2 2N3906 ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel 2N3906RL1G TO−92 (Pb−Free) 2000 / Tape & Reel 2N3906RLRA TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box TO−92 2000 / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device 2N3906 2N3906G 2N3906RL1 2N3906RLRAG 2N3906RLRM 2N3906RLRMG 2N3906RLRP 2N3906RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3V 275 < 1 ns 10 k +0.5 V CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit 3V < 1 ns +9.1 V 275 10 k 0 1N916 10 < t1 < 500 ms t1 CS < 4 pF* 10.9 V DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 2N3906 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time Figure 6. Fall Time http://onsemi.com 4 200 2N3906 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 mA 2 IC = 100 mA 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 100 Figure 8. h PARAMETERS (VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 5 2N3906 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 q V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C -55°C TO +25°C -0.5 +25°C TO +125°C -1.0 -55°C TO +25°C qVB FOR VBE(sat) -1.5 -2.0 200 qVC FOR VCE(sat) 0 Figure 15. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 6 180 200 2N3906 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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