PN2907A Preferred Device General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg - 55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER TO-92 CASE 29 STYLE 1 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction- to- Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM PN2 907A YWWG G PN2907A Y WW G = Device Code = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: PN2907A/D PN2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150°C) ICBO - -0.01 -10 Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IB - -50 75 100 100 100 50 300 - - -0.4 -1.6 - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF ton - 45 ns td - 10 ns tr - 40 ns toff - 100 ns ts - 80 ns tf - 30 ns OFF CHARACTERISTICS mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (Note 1) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1) hFE Collector-Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Notes 1 and 2), (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) Rise Time Turn-Of f Time Storage Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 PN2907A ORDERING INFORMATION Package Shipping† PN2907AG TO-92 (Pb-Free) 5000 Units / Bulk PN2907ARLRAG TO-92 (Pb-Free) 2000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 50 -16 V 200 ns Figure 1. Delay and Rise Time Test Circuit INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 3 PN2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -55 °C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -30 -50 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time http://onsemi.com 4 PN2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 W -500 mA, Rs = 560 W -50 mA, Rs = 2.7 kW -100 mA, Rs = 1.6 kW 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 C, CAPACITANCE (pF) 4.0 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 Ceb 10 7.0 5.0 Ccb 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain — Bandwidth Product +0.5 -1.0 TJ = 25°C -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) -0.8 V, VOLTAGE (VOLTS) IC = -50 mA -100 mA -500 mA -1.0 mA 0 50 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz VBE(on) @ VCE = -10 V -0.4 -0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -2.5 -0.1 -0.2 -500 Figure 11. “On” Voltage RqVB for VBE -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 PN2907A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K D X X G J H V C SECTION X-X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X-X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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