WILLAS BC817

WILLAS
BC817-xxLT1
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
45
V
Collector–Base Voltage
V CBO
50
V
Emitter–Base Voltage
V EBO
5.0
V
IC
500
mAdc
im
ina
Collector Current — Continuous
SOT–23
ry
Rating
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR– 5 Board, (1)
Unit
225
1.8
556
mW
mW/°C
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
PD
R θJA
PD
Pr
el
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
3
COLLECTOR
R θJA
T J , T stg
1
BASE
2
EMITTER
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V (BR)CEO
45
—
—
V
V (BR)CES
50
—
—
V
V
5.0
—
—
V
(VCB = 20 V)
—
—
100
nA
(VCB = 20 V, TA = 150°C)
—
—
5.0
µA
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
Collector Cutoff Current
(BR)EBO
I CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-
WILLAS ELECTRONIC CORP.
WILLAS
BC817-xxLT1
General Purpose Transistors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I C= 100 mA, V CE = 1.0 V)
h FE
BC817–16
BC817–25
BC817–40
100
160
250
40
(I C = 500 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
—
0.7
V
V BE(on)
—
—
1.2
V
fT
100
—
—
MHz
C obo
—
10
—
pF
Marking
Shipping
BC817-16LT1
6A
3000/Tape&Reel
BC817-25LT1
6B
3000/Tape&Reel
Pr
el
Device
—
im
ina
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
250
400
600
—
V CE(sat)
ry
( I C = 500 mA, V CE = 1.0 V)
—
—
—
—
BC817-40LT1
2012-
6C
3000/Tape&Reel
WILLAS ELECTRONIC CORP.
WILLAS
BC817-xxLT1
General Purpose Transistors
.008(0.20)
.003(0.08)
Pr
eli
m
.080(2.04)
.070(1.78)
ina
ry
.110(2.80)
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
.083(2.10)
.006(0.15)MIN.
SOT-23
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
.004(0.10)MAX.
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
2012-
inches
mm
WILLAS ELECTRONIC CORP.