DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V IC 60 mA 100 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 125 °C Storage Temperature Tstg −65 to +125 °C Note Free air Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10099EJ01V0DS (1st edition) (Previous No. P13075EJ1V0DS00) Date Published February 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Corporation 1998 NEC Compound Semiconductor Devices 2002 2SC5431 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA – – 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 100 nA VCE (sat) hFE = 10, IC = 5 mA – – 0.5 V VCE = 5 V, IC = 5 mA 60 – 120 – Collector to Emitter Saturation Voltage hFE DC Current Gain Gain Bandwidth Product Note 1 fT VCE = 5 V, IC = 5 mA, f = 1 GHz 3.0 4.3 – GHz 2 VCE = 5 V, IC = 5 mA, f = 1 GHz 5.0 – – dB Note 2 VCB = 5 V, IE = 0 mA, f = 1 MHz – 0.6 1.2 pF S21e Insertion Power Gain Reverse Transfer Capacitance Cre Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank EB FB Marking TA TB hFE Value 60 to 90 80 to 120 Data Sheet PU10099EJ01V0DS 2SC5431 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 150 Free Air 125 100 75 50 25 0 25 50 75 100 125 150 1.00 f = 1 MHz 0.50 0.20 0.10 1 10 100 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 24 24 Collector Current IC (mA) IB = 120 µ A 16 8 0 0.2 0.4 0.6 60 µ A 8 40 µ A 20 µ A 2 4 6 8 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 7 VCE = 5 V 50 20 1 80 µ A 0 1.0 100 10 0.5 100 µ A 16 Base to Emitter Voltage VBE (V) 200 DC Current Gain hFE 0.8 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) VCE = 5 V 2 5 10 20 50 6 10 VCE = 5 V f = 1 GHz 5 4 3 2 1 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Data Sheet PU10099EJ01V0DS 3 2SC5431 INSERTION POWER GAIN vs. COLLECTOR CURRENT 25 14 VCE = 5 V IC = 5 mA 20 15 MAG 10 |S21e|2 5 0 0.1 1.0 Insertion Power Gain |S21e|2 (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) INSERTION POWER GAIN, MAG vs. FREQUENCY 12 10 10.0 Frequency f (GHz) 8 6 4 2 0 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 VCE = 5 V f = 1 GHz Data Sheet PU10099EJ01V0DS 100 2SC5431 S-PARAMETERS VCE = 3 V, IC = 1 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.878 0.699 0.607 0.531 0.477 0.450 0.442 0.427 0.415 0.426 0.450 0.467 0.477 0.492 0.511 −34.4 −64.9 −90.1 −107.9 −123.5 −137.4 −148.0 −157.3 −167.7 −177.6 −175.6 170.7 166.1 161.5 158.0 3.225 2.556 2.080 1.791 1.524 1.316 1.184 1.081 0.976 0.883 0.821 0.786 0.741 0.676 0.638 149.4 125.7 107.1 94.8 85.4 76.4 68.0 62.1 56.8 51.5 45.2 40.7 37.9 34.8 29.9 0.076 0.123 0.148 0.154 0.161 0.164 0.163 0.159 0.152 0.148 0.150 0.153 0.161 0.167 0.174 65.6 48.1 37.3 30.0 25.2 23.3 24.6 26.6 28.8 29.8 33.0 37.3 42.2 46.5 50.0 0.939 0.796 0.691 0.647 0.626 0.596 0.567 0.543 0.534 0.526 0.509 0.508 0.527 0.541 0.536 −14.8 −25.3 −34.0 −40.4 −43.9 −46.6 −50.9 −56.5 −62.8 −69.2 −76.5 −86.2 −94.4 −100.8 −107.8 VCE = 3 V, IC = 3 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.707 0.514 0.439 0.391 0.369 0.370 0.374 0.367 0.370 0.390 0.413 0.430 0.444 0.462 0.480 −53.0 −91.3 −116.2 −133.8 −148.6 −159.9 −167.5 −175.1 176.3 168.9 164.3 160.7 157.1 153.8 151.4 7.303 5.041 3.754 3.018 2.525 2.132 1.885 1.693 1.506 1.355 1.251 1.189 1.126 1.028 0.964 137.7 113.3 97.8 88.9 82.3 75.2 68.7 64.2 59.8 55.2 49.5 45.0 42.7 39.5 34.6 0.064 0.091 0.102 0.107 0.116 0.125 0.135 0.141 0.148 0.155 0.167 0.180 0.196 0.206 0.214 58.0 43.6 38.9 37.8 38.2 40.2 43.3 46.6 49.4 50.2 50.7 51.9 53.3 54.8 55.2 0.814 0.575 0.457 0.404 0.372 0.343 0.318 0.299 0.289 0.280 0.268 0.272 0.286 0.297 0.303 −27.8 −40.8 −48.1 −52.1 −53.8 −55.5 −59.4 −64.8 −70.7 −77.1 −85.6 −95.6 −104.0 −110.4 −117.3 VCE = 3 V, IC = 5 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.597 0.431 0.375 0.347 0.340 0.348 0.355 0.352 0.359 0.381 0.404 0.421 0.435 0.454 0.472 −65.7 −106.4 −130.0 −146.7 −160.1 −169.5 −175.6 177.6 170.0 163.8 160.0 157.0 153.7 150.8 149.0 9.659 6.136 4.420 3.497 2.911 2.441 2.153 1.925 1.706 1.533 1.411 1.343 1.270 1.162 1.088 130.5 107.4 93.7 86.2 80.3 74.2 68.4 64.4 60.4 56.1 50.7 46.6 44.3 41.6 36.6 0.056 0.075 0.086 0.093 0.105 0.116 0.130 0.142 0.152 0.161 0.175 0.191 0.209 0.220 0.227 53.8 44.3 43.7 44.8 47.0 49.1 51.6 54.4 56.4 56.4 55.8 55.7 56.3 57.4 57.0 0.719 0.463 0.354 0.305 0.272 0.246 0.225 0.210 0.200 0.192 0.185 0.191 0.206 0.218 0.228 −35.9 −49.2 −55.6 −58.8 −59.9 −61.7 −66.0 −71.9 −78.5 −86.1 −96.3 −107.2 −115.6 −122.2 −129.3 Data Sheet PU10099EJ01V0DS S22 5 2SC5431 VCE = 5 V, IC = 1 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.886 0.711 0.616 0.538 0.481 0.448 0.437 0.421 0.407 0.417 0.439 0.455 0.466 0.480 0.499 −32.7 −62.0 −86.9 −104.5 −120.1 −134.2 −145.2 −154.8 −165.5 −175.6 177.1 172.0 167.2 162.4 158.8 3.235 2.597 2.130 1.844 1.577 1.362 1.222 1.116 1.008 0.915 0.849 0.812 0.768 0.701 0.661 150.8 127.7 109.4 97.1 87.9 79.1 70.8 64.9 59.5 54.3 47.8 43.3 40.5 37.4 32.5 0.066 0.109 0.131 0.139 0.145 0.148 0.148 0.144 0.138 0.135 0.138 0.143 0.152 0.159 0.167 66.7 49.9 39.3 32.5 27.7 26.0 27.7 29.8 32.6 34.1 37.8 42.2 47.0 51.8 55.6 0.948 0.821 0.722 0.682 0.666 0.639 0.611 0.584 0.574 0.566 0.550 0.542 0.558 0.573 0.566 −12.9 −22.2 −30.2 −36.4 −39.6 −41.9 −45.7 −50.7 −56.6 −62.5 −69.0 −77.8 −86.0 −92.3 −98.7 VCE = 5 V, IC = 3 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.723 0.525 0.444 0.390 0.362 0.359 0.362 0.354 0.356 0.374 0.397 0.414 0.429 0.446 0.465 −49.7 −86.6 −111.6 −129.2 −144.4 −156.6 −164.8 −172.8 178.2 170.5 165.6 162.0 158.2 154.8 152.3 7.443 5.234 3.929 3.168 2.663 2.247 1.987 1.784 1.589 1.426 1.316 1.253 1.186 1.083 1.018 139.6 115.4 99.6 90.6 84.0 77.1 70.4 66.0 61.6 57.1 51.3 46.8 44.2 41.4 36.2 0.057 0.082 0.094 0.098 0.106 0.115 0.124 0.131 0.138 0.144 0.155 0.169 0.185 0.196 0.204 60.0 45.9 41.3 39.8 40.3 42.2 45.5 49.1 52.4 53.2 54.2 55.1 56.6 58.6 59.2 0.839 0.617 0.501 0.452 0.424 0.397 0.372 0.349 0.338 0.328 0.315 0.310 0.320 0.329 0.331 −24.0 −35.2 −41.5 −45.1 −46.4 −47.3 −50.3 −54.8 −60.2 −65.8 −72.5 −81.4 −89.7 −96.2 −102.7 VCE = 5 V, IC = 5 mA, ZO = 50 Ω 6 Frequency (GHz) MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. ANG. (deg.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.675 0.550 0.513 0.489 0.487 0.501 0.508 0.498 0.502 0.524 0.545 0.560 0.571 0.585 0.602 −66.0 −108.8 −133.2 −149.5 −162.2 −170.9 −176.5 177.3 169.8 164.0 160.2 156.9 153.6 150.5 148.5 10.641 7.098 5.218 4.145 3.458 2.973 2.566 2.279 2.018 1.800 1.645 1.559 1.475 1.337 1.246 135.2 111.6 96.6 88.0 81.6 75.0 69.0 64.7 60.4 56.0 50.1 45.5 43.0 39.9 35.4 0.052 0.074 0.088 0.097 0.108 0.119 0.133 0.143 0.153 0.162 0.176 0.191 0.210 0.222 0.226 57.8 46.8 45.0 45.5 47.9 50.1 52.1 55.0 56.4 56.5 55.6 55.4 56.1 57.1 57.1 0.786 0.546 0.428 0.377 0.345 0.316 0.290 0.269 0.257 0.246 0.233 0.229 0.236 0.239 0.240 −29.4 −41.0 −47.0 −50.1 −50.9 −51.8 −54.8 −59.4 −65.0 −71.1 −78.4 −88.3 −97.3 −104.3 −110.6 Data Sheet PU10099EJ01V0DS S22 2SC5431 PACKAGE DIMENSIONS FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm) 1.2 ± 0.05 0.3+0.1 –0 0.2 0.45 +0.1 –0 0.45 (0.9) 2 TA 3 1 0.15+0.1 –0.05 0.59 ± 0.05 1.4 ± 0.1 0.8 ± 0.1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Data Sheet PU10099EJ01V0DS 7 2SC5431 • The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 8 Data Sheet PU10099EJ01V0DS 2SC5431 Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0110