ETC 2SC5337QR-T1

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5337
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC3356
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5337
25 pcs (Non reel)
• Magazine case
2SC5337-T1
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
IC
250
mA
2.0
W
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10939EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1996, 2001
2SC5337
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
0.01
5.0
µA
Emitter Cut-off Current
IEBO
VBE = 2 V, IC = 0 mA
–
0.03
5.0
µA
VCE = 10 V, IC = 50 mA
40
120
200
–
VCE = 10 V, IC = 50 mA, f = 1 GHz
7.0
8.3
–
dB
hFE
DC Current Gain
Note 1
RF Characteristics
S21e2
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 500 MHz
–
1.5
3.5
dB
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 1 GHz
–
2.0
3.5
dB
–
59.0
–
dB
–
82.0
–
dB
2nd Order Intermoduration
Distortion
IM2
3rd Order Intermoduration Distortion
IM3
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 − f2
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 − f2
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
hFE CLASSIFICATION
2
Rank
QQ
QR
QS
Marking
QQ
QR
QS
hFE Value
40 to 80
60 to 120
100 to 200
Data Sheet P10939EJ2V0DS
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
1.0
0
50
100
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (W)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
3.0
2.0
1.0
0.5
0.3
1
150
3
5
10
20
Ambient Temperature TA (˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
0.5 mA
100
DC Current Gain hFE
0.4 mA
80
60
0.3 mA
40
0.2 mA
20
0.1 mA
0
30
300
IB = 0.6 mA
Collector Current IC (mA)
5.0
10
100
50
10
0.1
20
1
10
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
1 000
5
3
2
1
0.5
VCE = 10 V
f = 1 GHz
0.3
10
30
50 70 100
Insertion Power Gain |S21e|2 (dB)
Gain Bandwidth Product fT (GHz)
10
VCE = 10 V
f = 1 GHz
10
5
0
10
30
50 70 100
Collector Current IC (mA)
Collector Current IC (mA)
Data Sheet P10939EJ2V0DS
3
2SC5337
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
IC = 50 mA
20
MAG
10
3rd Order Intermodulation Distortion IM3 (dB)
2nd Order Intermodulation Distortion (+) IM2+ (dB)
2nd Order Intermodulation Distortion (–) IM2– (dB)
5
4
3
2
1
0
0.2
0.4
0.6 0.8 1.0 1.4
2.0
Frequency f (GHz)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
80
VCE = 10 V
IM3
70
60
IM2+
IM2–
50
40
30
10
IM3 : Vin = 110 dBµV/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ : Vin = 105 dBµV/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– : Vin = 105 dBµ V/75 Ω 2 tone each
f = 190 – 90 MHz
50
0
5
10
20
50
Collector Current IC (mA)
100
300
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
VCE = 10 V
f = 1 GHz
6
|S21e|2
Noise Figure NF (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Data Sheet P10939EJ2V0DS
100
2SC5337
S-PARAMETERS
VCE = 10 V, IC = 50 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.592
0.577
0.566
0.558
0.554
0.542
0.527
0.519
0.509
0.514
0.498
0.494
0.487
0.467
0.477
0.471
0.467
0.469
0.465
0.468
−136.6
−160.0
−168.5
−174.0
−177.5
−179.4
177.9
175.8
174.4
171.0
166.8
167.3
161.7
160.4
157.4
154.5
152.5
151.3
149.1
147.0
24.447
12.746
8.591
6.438
5.160
4.312
3.729
3.292
2.983
2.759
2.648
2.665
2.478
2.177
1.973
1.815
1.754
1.639
1.568
1.475
108.4
96.5
91.2
87.2
84.1
82.3
80.9
78.7
77.7
76.6
75.4
71.3
63.0
60.1
57.9
57.2
55.3
54.4
53.4
52.6
0.030
0.042
0.055
0.066
0.083
0.095
0.112
0.123
0.136
0.151
0.166
0.180
0.194
0.216
0.230
0.240
0.260
0.273
0.285
0.289
50.5
57.4
67.3
70.8
68.6
70.6
71.2
74.6
75.0
75.3
75.8
74.7
75.9
74.7
74.9
73.2
72.9
70.5
69.9
69.3
0.465
0.335
0.276
0.269
0.262
0.262
0.251
0.252
0.252
0.257
0.278
0.306
0.314
0.273
0.281
0.291
0.316
0.312
0.316
0.323
−95.2
−123.0
−130.1
−132.7
−134.5
−139.1
−133.4
−132.9
−124.6
−125.3
−118.4
−120.2
−124.2
−124.0
−123.2
−120.2
−118.7
−123.1
−125.5
−126.3
VCE = 10 V, IC = 100 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.564
0.586
0.576
0.561
0.550
0.540
0.538
0.521
0.510
0.524
0.502
0.489
0.488
0.472
0.480
0.470
0.465
0.464
0.460
0.466
−146.0
−165.8
−171.9
−176.3
179.9
178.2
175.7
174.6
173.2
168.5
165.2
165.9
161.1
157.9
155.3
153.4
151.1
149.5
147.9
146.0
24.857
12.845
8.681
6.541
5.209
4.358
3.772
3.332
3.037
2.780
2.680
2.718
2.578
2.213
2.012
1.846
1.745
1.677
1.571
1.514
105.3
94.5
89.7
86.3
83.5
82.2
80.6
78.4
77.0
76.9
75.3
72.3
63.0
58.7
57.8
57.2
56.5
54.9
53.3
52.3
0.019
0.026
0.041
0.048
0.060
0.069
0.086
0.099
0.113
0.119
0.136
0.156
0.177
0.184
0.194
0.219
0.235
0.248
0.249
0.264
50.2
59.6
73.2
77.8
81.4
82.0
84.2
85.1
85.4
83.5
86.8
83.5
85.5
81.8
85.3
82.2
82.4
79.0
78.6
77.4
0.284
0.204
0.199
0.200
0.196
0.182
0.216
0.210
0.222
0.198
0.213
0.246
0.251
0.209
0.252
0.242
0.240
0.263
0.281
0.276
−116.1
−129.9
−138.7
−140.1
−137.0
−137.6
−131.0
−130.5
−122.2
−120.1
−114.9
−114.9
−122.8
−127.2
−114.1
−117.6
−112.9
−121.9
−120.0
−124.0
Data Sheet P10939EJ2V0DS
5
2SC5337
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
0.85
E
B
2.45±0.1
C
E
0.1
0.8 MIN.
1.55
3.95±0.25
0.3
1.5±0.1
0.46
±0.06
0.42±0.06
0.25±0.02
0.42±0.06
1.5
3.0
PIN CONNECTIONS
E : Emitter
C: Collector
B : Base
6
Data Sheet P10939EJ2V0DS
2SC5337
[MEMO]
Data Sheet P10939EJ2V0DS
7
2SC5337
• The information in this document is current as of August, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4