ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.030⍀ ID=6.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A04DN8TA 7” 12mm 500 units ZXMN2A04DN8TC 13” 12mm 2500 units DEVICE MARKING • ZXMN 2A04D PROVISIONAL ISSUE A - AUGUST 2001 1 Top View ZXMN2A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V D SS LIMIT 20 UNIT V Gate Source Voltage VGS ⫾12 V Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) I D (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) 6.8 5.4 5.2 A Pulsed Drain Current (c) I DM 23 A Continuous Source Current (Body Diode) (b) IS 12 A Pulsed Source Current (Body Diode)(c) I SM 23 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 70 °C/W Junction to Ambient (b)(d) R θJA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. Refer to Transcient Thermal Inpedance graph. (d) For device with one active die (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - AUGUST 2001 2 ZXMN2A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)D SS Zero Gate Voltage Drain Current I D SS Gate-Body Leakage I G SS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs Input Capacitance 20 V I D =250µA, V G S =0V 0.5 µA V D S =20V, V G S =0V 100 nA 0.7 V G S =±12V, V DS =0V V I =250µA, V DS = V G S Ω Ω V G S =4.5V, I D =11A V G S =2.5V, I D =5A 40 S V D S =10V,I D =6A C i ss 2300 pF Output Capacitance C o ss 450 pF Reverse Transfer Capacitance C rss 260 pF Turn-On Delay Time t d (o n ) 6.3 ns Rise Time tr 8.5 ns Turn-Off Delay Time t d(off) 25 ns Fall Time tf 5 ns Gate Charge Qg 19.4 nC Total Gate Charge Qg 24 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd 4 nC Diode Forward Voltage (1) V SD TBA? Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr 0.030 0.045 D DYNAMIC (3) V D S =15V, V G S =0V, f=1MHz SWITCHING(2) (3) V D D =10V, I D =6A R G =6.0Ω, V G S =5V V D S =15V,V G S =5V, I D =3.5A V D S =10V,V G S =4.5V, I D =6A SOURCE-DRAIN DIODE V T J =25°C, I S =5.1A, V G S =0V 15 ns T J =25°C, I F =6A, di/dt= 100A/µs 5 nC NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - AUGUST 2001 3 0.95 ZXMN2A04DN8 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 4.80 4.98 0.189 0.196 B 1.27 BSC 0.05 BSC C 0.53 REF 0.02 REF D 0.36 0.46 0.014 0.018 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.05 0.07 G 0.10 0.25 0.004 0.010 J 5.80 6.20 0.23 0.24 K 0° 8° 0° 8° L 0.41 1.27 0.016 0.050 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. Suite 315 700 Veterans Memorial Highway Hauppauge USA Telephone: (631) 360-2222 Fax: (631) 360-8222 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2001 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 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