DIODES ZXMN10A07ZTA

ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
SOT89
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
7"
12mm
1000 units
PINOUT
DEVICE MARKING
• 7N10
(Top view)
ISSUE 6 - MAY 2004
1
SEMICONDUCTORS
ZXMN10A07Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-source voltage
V DSS
100
Gate-source voltage
V GS
±20
V
Continuous drain current @ V GS =10V; T A =25°C (b)
@ V GS =10V; T A =70°C (b)
@ V GS =10V; T A =25°C (a)
ID
1.4
A
Pulsed drain current (c)
I DM
4.2
A
Continuous source current (body diode) (b)
IS
2.1
A
Pulsed source current (body diode) (c)
I SM
4.2
A
PD
1.5
W
12
mW/°C
Power dissipation at T A =25°C
(a)
1.1
1.0
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
2.6
W
21
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
83.3
°C/W
Junction to ambient (b)
R ⍜JA
47.4
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
Refer to Transient Thermal Impedance graph.
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SEMICONDUCTORS
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ZXMN10A07Z
CHARACTERISTICS
ISSUE 6 - MAY 2004
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SEMICONDUCTORS
ZXMN10A07Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Drain-source breakdown voltage
V (BR)DSS
100
V
I D = 250␮A, V GS =0V
Zero gate voltage drain current
I DSS
1
␮A
V DS = 100V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =⫾20V, V DS =0V
V
I D = 250␮A, V DS =V GS
0.7
⍀
V GS = 10V, I D = 1.5A
0.9
⍀
V GS = 6V, I D = 1A
V DS = 15V, I D = 1A
STATIC
Gate-source threshold voltage
V GS(th)
Static drain-source on-state
resistance (1)
R DS(on)
Forward transconductance
(1) (3)
2.0
g fs
1.6
S
DYNAMIC (3)
Input capacitance
C iss
138
pF
Output capacitance
C oss
12
pF
Reverse transfer capacitance
C rss
6
pF
SWITCHING
V DS = 50V, V GS =0V
f=1MHz
(2) (3)
Turn-on-delay time
t d(on)
1.8
ns
Rise time
tr
1.5
ns
V DD = 50V, I D = 1A
Turn-off delay time
t d(off)
4.1
ns
R G ≅6.0⍀, V GS = 10V
Fall time
tf
2.1
ns
Total gate charge
Qg
2.9
nC
Gate-source charge
Q gs
0.7
nC
V DS = 50V, V GS = 10V
Gate drain charge
Q gd
1
nC
I D = 1A
Diode forward voltage (1)
V SD
0.85
Reverse recovery time (3)
t rr
27
ns
T j =25°C, I F = 1A,
Reverse recovery charge (3)
Q rr
12
nC
di/dt=100A/␮s
SOURCE-DRAIN DIODE
0.95
V
T j =25°C, I S = 1.5A,
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - MAY 2004
SEMICONDUCTORS
4
ZXMN10A07Z
TYPICAL CHARACTERISTICS
ISSUE 6 - MAY 2004
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SEMICONDUCTORS
ZXMN10A07Z
TYPICAL CHARACTERISTICS
ISSUE 6 - MAY 2004
SEMICONDUCTORS
6
ZXMN10A07Z
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
K
D B
G
F
N
Millimeters
Inches
DIM
Min
Max
Min
Max
A
4.40
4.60
0.173
0.181
B
3.75
4.25
.150
0.167
C
1.40
1.60
0.550
0.630
D
-
2.60
-
0.102
F
0.28
0.45
0.011
0.018
G
0.38
0.55
0.015
0.022
H
1.50
1.80
0.060
0.072
K
2.60
2.85
0.102
0.112
L
2.90
3.10
0.114
0.112
N
1.4
1.60
0.055
0.063
© Zetex Semiconductors plc 2004
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ISSUE 6 - MAY 2004
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SEMICONDUCTORS