TELCOM TC962IJA

EVALUATION
KIT
AVAILABLE
1
TC962
HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
2
FEATURES
GENERAL DESCRIPTION
■
■
■
■
■
■
■
■
The TC962 is an advanced version of the industrystandard 7662 high-voltage DC-to-DC converter. Using
improved design techniques and CMOS construction, the
TC962 can source as much as 8mA versus the 7662’s
20mA capability.
As an inverter, the TC962 can put out voltages as high
as 18V and as low as 3V without the need for external
diodes. The output impedance of the device is a low 28Ω
(with the proper capacitors), voltage conversion efficiency
is 99.9%, and power conversion efficiency is 97%.
The low voltage terminal (pin 6) required in some 7662
applications has been eliminated. Grounding this terminal
will double the oscillator frequency from 12kHz to 24kHz.
This will allow the use of smaller capacitors for the same
output current and ripple, in most applications. Only two
external capacitors are required for inverter applications. In
the event an external clock is needed to drive the TC962
(such as paralleling), driving this pin directly will cause the
internal oscillator to sync to the external clock.
Pin Compatible With TC7662/ICL7662/SI7661
High Output Current ....................................... 80mA
No External Diodes Required
Wide Operating Range ............................. 3V to 18V
Low Output Impedance ............................. 28Ω Typ.
No Low Voltage Terminal Required
Application Zener On Chip
OSC Frequency Doubling Pin Option for Smaller
Output Capacitors
PIN CONFIGURATIONS (DIP and SOIC)
8-Pin DIP
8-Pin CerDIP
ZENER
CATHODE
+
C
GND
–
C
1
•
8
2
3
4
TC962CPA
TC962EPA
TC962IJA
TC962MJA
7
VDD
COSC
6
FREQ x 2
5
VOUT
16-Pin SOIC Wide
ZENER
CATHODE
1
16
VDD
NC
C+
2
15
NC
3
14
NC
4
13
NC
GND
5
12
FREQ x 2
NC
6
11
NC
7
10
VOUT
8
9
C–
NC
TC962COE
COSC
NC
Part No.
Package
TC962COE
TC962CPA
TC962EPA
TC962IJA
TC962MJA
TC7660EV
16-Pin SOIC Wide
0°C to +70°C
8-Pin Plastic DIP
0°C to +70°C
8-Pin Plastic DIP
– 40°C to +85°C
8-Pin CerDIP
– 25°C to +85°C
8-Pin CerDIP
– 55°C to +125°C
Evaluation Kit for Charge Pump Family
8
Temp. Range
FREQ X 2
–
OSC/C
TIMING
5
6
TC962
7
LEVEL
SHIFT
Q
+
–
F/F
C
Q
COMPARATOR
WITH HYSTERESIS
ZENER
CATHODE
VDD
I
I
4
ORDERING INFORMATION
FUNCTIONAL BLOCK DIAGRAM
6
3
P SW1
2
LEVEL
SHIFT
N SW4
CAP
+
+
CP
EXTERNAL
3 GND
7
1
6.4V
VREF
+
LEVEL
SHIFT
OUT
4
LEVEL
SHIFT
CR
EXT
N SW2
CAP
–
RL
N SW3
8
5
VOUT
TC962-8 9/16/96
TELCOM SEMICONDUCTOR, INC.
4-37
HIGH CURRENT CHARGE PUMP
DC -TO-DC CONVERTER
TC962
Pin 1, which is used as a test pin on the 7662, is a voltage
reference zener on the TC962. This zener (6.4V at 5 mA) has
a dynamic impedance of 12Ω and is intended for use where
the TC962 is supplying current to external regulator circuitry
and a reference is needed for the regulator circuit. (See
applications section.)
The TC962 is compatible with the LTC1044, SI7661,
and ICL7662. It should be used in designs that require
greater power and/or less input to output voltage drop. It
offers superior performance over the ICL7660S.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (VDD to GND) .................................. +18V
Input Voltage Any Pin ............... (V DD + 0.3) to (V SS – 0.3)
Current Into Any Pin ................................................. 10mA
ESD Protection ..................................................... ±2000V
Output Short Circuit ................. Continuous (at 5.5V Input)
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Operating Temperature Range
CPA, COE ............................................. 0°C to +70°C
IJA .................................................... – 25°C to +85°C
EPA .................................................. – 40°C to +85°C
MJA ................................................ – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
SOIC ............................................................... 760mW
PDIP ............................................................... 730mW
CerDIP ............................................................800mW
Package Thermal Resistance
CerDIP, RθJ-A ................................................ 90°C/W
PDIP, RθJ-A ................................................. 140°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: VDD = 15V, TA = +25°C (See Test Circuit), unless otherwise indicated.
Symbol
Parameter
V DD
IS
Supply Voltage
Supply Current
V DD = 15V
V DD = 5V
RO
Output Source
Resistance
COSC
Oscillator Frequency
PEFF
Power Efficiency
VDEF
Voltage Efficiency
VZ
ZZT
4-38
Zener Voltage
Zener Impedance
Test Conditions
Min
Typ
3
RL = ∞
TA = +25°C
0 ≤ TA ≤ +70°C
–55 ≤ TA ≤ +125°C
TA = +25°C
0 ≤ TA < +70°C
–55 ≤ TA ≤ +125°C
IL = 20mA, V DD = 15V
IL = 80mA, V DD = 15V
IL = 3mA, V DD = 5V
Pin 6 Open
Pin 6 GND
V DD = 15V
RL = 2 kΩ
V DD = 15V
RL = ∞
Over Temperature Range
IZ = 5mA
IL = 2.5mA to 7.5mA
Max
Unit
18
V
—
—
—
700
93
510
560
650
190
210
210
32
35
—
12
24
97
—
µA
µA
µA
µA
µA
µA
Ω
Ω
Ω
kHz
kHz
%
99
99.9
—
%
96
6.0
—
—
6.2
12
6.4
%
V
Ω
—
—
—
37
40
50
—
TELCOM SEMICONDUCTOR, INC.
HIGH CURRENT CHARGE PUMP
DC -TO-DC CONVERTER
1
TC962
APPLICATIONS INFORMATION
Theory of Operation
The TC962 is a capacitive pump (sometimes called a
switched capacitor circuit), where four MOSFET switches
control the charge and discharge of a capacitor.
The functional diagram (page 1) shows how the switching action works. SW1 and SW2 are turned on simultaneously, charging CP to the supply voltage, VIN. This assumes that the on resistance of the MOSFETs in series
with the capacitor results in a charging time (3 time constants) that is less than the on time provided by the oscillator frequency as shown:
3 (RDS(ON) CP) <CP/(0.5 fOSC)
In the next cycle, SW1 and SW2 are turned off and
after a very short interval of all switches being off (this
prevents large currents from occurring due to cross conduction), SW3 and SW4 are turned on. The charge in CP is
then transferred to CR, BUT WITH THE POLARITY INVERTED. In this way, a negative voltage is now derived.
Page 1 shows a functional diagram of the TC962. An
oscillator supplies pulses to a flip-flop that is then fed to a
set of level shifters. These level shifters then drive each set
of switches at one-half the oscillator frequency.
The oscillator has two pins that control the frequency of
oscillation. Pin 7 can have a capacitor added that is returned to ground. This will lower the frequency of the
oscillator by adding capacitance to the timing capacitor
internal to the TC962. Grounding pin 6 will turn on a
current source and double the frequency. This will double
the charge current going into the internal capacitor, as well
as any capacitor added to pin 7.
A zener diode has been added to the TC962 for use as
a reference in building external regulators. This zener runs
from pin 1 to ground.
This applies to all types of capacitors, including film
types (polyester, polycarbonate, etc.).
Some applications information suggest that the capacitor is not critical and attribute the limiting factor of the
capacitor to its reactive value. Let's examine this:
XC
1
XC =
and ZC =
,
DS
2πf C
where DS (duty cycle) = 50%.
Thus, ZC ≈ 2.6Ω at f = 12kHz, where C = 10µF.
For the TC962, f = 12,000 Hz, and a typical value of C
would be 10µF. This is a reactive impedance of ' 2.6Ω. If
the ESR is as great as 5Ω, the reactive value is not as critical
as it would first appear, as the ESR would predominate.
The 5Ω value is typical of a general-purpose electrolytic
capacitor.
ESL
Figure 1. Typical Electrolytic Capacitor
Latch Up
All CMOS structures contain a parasitic SCR. Care must
be taken to prevent any input from going above or below the
supply rail, or latch up will occur. The result of latch up is an
effective short between VDD and VSS. Unless the power
supply input has a current limit, this latch-up phenomena will
result in damage to the device. (See Application Note 31 for
additional information.)
TELCOM SEMICONDUCTOR, INC.
5
6
TEST CIRCUIT
Capacitors
In early charge pump converters, the capacitors were
not considered critical due to the high RDS(ON) of the MOSFET switches. In order to understand this, let’s look at a
model of a typical electrolytic capacitor (Figure 1).
Note that one of its characteristics is ESR (equivalent
series resistance). This parasitic resistance winds up in
series with the load. Thus, both voltage conversion efficiency and power conversion efficiency are compromised if
a low ESR capacitor is not used.
In the test circuit, for example, just changing two capacitors, CP and CR, from capacitors with unspecified ESR to low
ESR-type output, impedance changes from 36Ω to 28Ω, an
improvement of 23%!
3
4
C
ESR
2
690Ω
NC
+ 10µF
CP
1
8
2
7
3
4
IS
IL
C OSC
TC962
V+
(+5V)
RL
7
VOUT
(–5V)
5
CR
+
10µF
8
4-39
HIGH CURRENT CHARGE PUMP
DC -TO-DC CONVERTER
TC962
TYPICAL APPLICATIONS
Split V + In Half
Combined Negative Converter and Positive Multiplier
V+
1
8
2
7
+ 10µF 3
CP2
TC962
6
5
4
VD1
VD2
VOUT = –V +
C R1
+
CP1
+
V+
+
VOUT =
2V +–2VD
10µF
CP
+ 10µF
1
8
2
7
3
TC962
4
6
5
+
VOUT = V
2
10µF
CR
Lowering Output Resistance by Paralleling Devices
+
10µF
Positive Voltage Multiplier
V+
V+
CP1
+ 10µF
1
8
1
8
1
8
2
7
2
7
2
7
6
3
3
4
TC962
6
5
CP2
+ 10µF
3
4
TC962
4
5
CR
4-40
+
VOUT
10µF
TC962
VD1
VD2
6
5
CP
+ 10µF
CP
+
VOUT =
+
2V –2 VD
10µF
TELCOM SEMICONDUCTOR, INC.
HIGH CURRENT CHARGE PUMP
DC -TO-DC CONVERTER
1
TC962
TYPICAL CHARACTERISTICS
20
700
V + = 15V
400
300
200
V + = 15V
18
FREQUENCY (kHz)
500
FREQUENCY (Hz)
1k
100
16
14
3
12
10
8
100
0
–60 –40 –20
10
0 20 40 60 80 100 120 140
6
1
10
100
1000
CAPACITANCE (pF)
TEMPERATURE (°C)
Output Resistance vs. Temperature
Current vs. Zener Voltage
CURRENT (mA)
60
+
V = 5V IL = 3mA
40
TA = +25°C
40
30
20
V+ = 15V IL = 20mA
30
10
20
10
–60 –40 –20
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
0
4.5
TA = +25°C
100
150
135
90
80
EFFICIENCY
120
105
70
SUPPLY
CURRENT
60
90
75
50
40
60
30
45
20
30
10
15
5.5
6.0
ZENER VOLTAGE (V)
6.5
7.0
5
0
0
4.0
4
Power Conversion Efficiency vs. I LOAD
POWER CONVERSION EFFICIENCY (%)
50
70
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
80
50
–60 –40 –20
10,000
SUPPLY CURRENT (mA)
SUPPLY CURRENT (µA)
TA = +25°C
10k
600
OUTPUT RESISTANCE ( Ω)
2
Frequency vs. Temperature
Oscillator Frequency vs. C EXT
Supply Current vs. Temperature
8
16 24 32 40 48 56
64 72
80
LOAD CURRENT (mA)
6
Output Resistance vs. Input Voltage
110
TA = +25°C
OUTPUT RESISTANCE (Ω)
100
90
80
70
3mA
60
20mA
7
50
40
30
20
10
0
2
4
6 8 10 12 14 16 18
INPUT VOLTAGE (V)
20
8
TELCOM SEMICONDUCTOR, INC.
4-41