IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc Bidirectional switches connect inputs to outputs 24:6 Mux/Demux switches Zero propagation delay, zero ground bounce Individual controls for each bank Undershoot clamp diodes on all switch and control pins TTL-compatible control inputs Available in 48-pin QVSOP Package The QS33X2253 is a high-speed CMOS 24:6 (3, dual 4:1) multiplexer/ demultiplexer. The QS33X2253 is a member of the MultiWidth™ family and is functionally compatible to three of the QuickSwitch version of the 74F253, 74FCT253, and the 74ALS/AS/LS253 Dual 4:1 multiplexers. The low ON resistance of the QS33X2253 allows inputs to be connected to outputs without adding propagation delay and without generating additional ground bounce noise. TTL-compatible control circuitry with "Break-before-make" feature avoids bus contention on the demux side. This part is ideal for video switching and four way memory bank interleaving applications. The QS33X2253 has 25Ω series resistors to reduce ground bounce noise. APPLICATIONS − − − − IDTQS33X2253 Logic replacment Video, audio, graphics switching, muxing Hot-swapping, hot-docking Voltage translation (5V to 3.3V) Mux/Demux devices provide an order of magnitude faster speed than equivalent logic devices. The QS33X2253 is characterized for operation at -40°C to +85°C. FUNCTIONAL BLOCK DIAGRAM S0 AB S0 CD S1 AB S1 CD EA EC EB ED I0 A I0 C I1 A YA YC I2 A I3 C I0 B I0 D YD I2 B I3 B S0 EF S1 EF I2 C I3 A I1 B YB I1 C I1 D I2 D I3 D EE EF I0 E I1 E YE I2 E I3 E I0 F I1 F YF I2 F I3 F INDUSTRIAL TEMPERATURE RANGE JANUARY 2000 1 c 1999 Integrated Device Technology, Inc. DSC-5760/- IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol VTERM(2) Description Supply Voltage to Ground Max. – 0.5 to +7 Unit V VTERM(3) DC Switch Voltage VS – 0.5 to +7 V VTERM(3) DC Input Voltage VIN – 0.5 to +7 V VAC AC Input Voltage (pulse width ≤20ns) -3 V 120 mA EA 1 48 VCC S1 AB 2 47 EB I3 A 3 46 S0 AB I2 A 4 45 I3 B IOUT DC Output Current I1 A 5 44 I2 B PMAX Maximum Power Dissipation (TA = 85°C) I0 A 6 43 I1 B TSTG Storage Temperature YA 7 42 I0 B GND 8 41 YB EC 9 40 VCC S1 CD 10 39 ED I3 C 11 38 S0 CD I2 C 12 37 I3 D I1 C 13 36 I2 D I0 C 14 35 I1 D YC 15 34 I0 D GND 16 33 YD EE 17 32 VCC S1 EF 18 31 EF 19 30 S0 EF 20 29 I 3F I 2F I3 E I2 E I1 E 21 28 I0 E 22 27 I 1F YE 23 26 I 0F GND 24 25 YF Data Inputs S0xx, S1xx I Select Inputs Ex I Enable Inputs Yx O Data Outputs W °C CAPACITANCE (TA = +25OC, f = 1.0MHz, VIN = 0V, VOUT = 0V) Pins Control Inputs Typ. 4 Max. (1) 5 Unit pF Quickswitch Channels Demux 5 7 pF (Switch OFF) Mux 14 16 pF NOTE: 1. This parameter is guaranteed at characterization but not tested. FUNCTION TABLE(1, 2) Enable PIN DESCRIPTION I/O I .5 – 65 to +150 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Vcc Terminals. 3. All terminals except Vcc. QVSOP TOP VIEW Pin Names Ixx (1) Description Select Outputs EA H EB X S1AB X S0AB X YA Hi-Z YB X Function Disable A X H X X X Hi-Z Disable B L L L L I0A I 0B S1 - 0 = 0 L L L H I1A I 1B S1 - 0 = 1 L L H L I2A I 2B S1 - 0 = 2 L L H H I3A I 3B S1 - 0 = 3 NOTES: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don’t Care Z = High-Impedence 2. This table represents the function for block “AB”. The “CD” block nomenclature substitutes “A” for “C” and “B” for “D”. The “EF” block nomenclature substitutes “A” for “E” and “B” for “F”. 2 IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: Industrial: TA = -40°C to +85°C, VCC = 5.0V ± 5% Symbol VIH Parameter Input HIGH Voltage Test Conditions Guaranteed Logic HIGH for Control Inputs Min. 2 Typ.(1) — Max. — Unit V VIL Input LOW Voltage Guaranteed Logic LOW for Control Inputs — — 0.8 V IIN Input Leakage Current (Control Inputs) 0V ≤ VIN ≤ Vcc — — ±1 µA IOZ Off-State Current (Hi-Z) 0V ≤ VOUT ≤ Vcc — — ±1 µA RON Switch ON Resistance Vcc = Min., VIN = 0V, ION = 30mA 20 28 40 Ω RON Switch ON Resistance Vcc = Min., VIN = 2.4V, ION = 15mA 20 35 48 Ω VP Pass Voltage (2) VIN = Vcc = 5V, IOUT = -5µA 3.7 4 4.2 V NOTES: 1. Typical values are at VCC = 5.0V, TA = 25°C. 2. Pass voltage is guaranteed but not production tested. TYPICAL ON RESISTANCE vs VIN AT VCC = 5V 80 R ON (ohms) 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 V IN (Volts) 3 2.5 3.0 3.5 IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE POWER SUPPLY CHARACTERISTICS Symbol ICCQ Parameter Quiescent Power Supply Current Test Conditions(1) VCC = Max., VIN = GND or Vcc, f = 0 ∆ICC Power Supply Current per Control Input HIGH(2) ICCD Dynamic Power Supply Current per MHz(3) Max. 9 Unit µA VCC = Max., VIN = 3.4V , f = 0 1.5 mA VCC = Max., I and Y pins open Control Input Toggling at 50% Duty Cycle 0.25 mA/MHz NOTES: 1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics. 2. Per TTL driven input (VIN = 3.4V, control inputs only). I and Y pins do not contribute to ∆Icc. 3. This current applies to the control inputs only and represents the current required to switch internal capacitance at the specified frequency. The I and Y inputs generate no significant AC or DC currents as they transition. This parameter is guaranteed but not production tested. SWITCHING CHARACTERISTICS OVER OPERATING RANGE TA = -40°C to +85°C, VCC = 5.0V ± 5% CLOAD = 50pF, RLOAD = 500Ω unless otherwise noted. Symbol tPLH tPHL tPZL tPZH tPZL tPZH tPLZ tPHZ Parameter Data Propagation Delay (2, 3) In to Y Switch Turn-On Delay Sn to Y Switch Turn-Off Delay En to Y Switch Turn-Off Delay (2) En to Y, Sn to Y Min. (1) Typ. Max. Unit — — 1.25 ns 0.5 — 7 ns 0.5 — 7 ns 0.5 — 6 ns NOTES: 1. Minimums guaranteed but not tested. 2. This parameter is guaranteed but not tested 3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25ns for CL = 50pF. Since this time constant is much smaller than the rise and fall times of typical driving signals, it adds very little propagation delay to the system. Propagation delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interaction with the load on the driven side. 4 IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE ORDERING INFORMATION IDTQS XXXXX XX Device Type Package X Process Blank Industrial (-40°C to +85°C) Q1 QVSOP 33X2253 High Speed CMOS Quickswitch Multiwidth 24:6 Mux/Demux CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com* *To search for sales office near you, please click the sales button found on our home page or dial the 800# above and press 2. The IDT logo, QuickSwitch, and SynchroSwitch are registered trademarks of Integrated Device Technology, Inc. 5