Marconi Optical Components P35-5126-000-200 HEMT MMIC Driver Amplifier, 25 - 30GHz Features · Over 22dBm Output Power @ 28GHz · 10dB Gain from 25 to 30GHz · Small 2 x 1mm Die Size Description The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and satellite communications. The die is fabricated using MOC's 0.20µm gate length, Power HEMT process (H40P) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. Electrical Performance Ambient Temperature 22±3° C, ZO = 50Ω, Vdd = 4.V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA U.O.S Parameter Conditions Small Signal Gain Gain slope Input Return Loss Output Return Loss Output power at 1dB gain compression First Stage Current Second Stage Current Thermal Resistance 25 25 25 25 Notes 1. All parameters measured on wafer - 30GHz 30GHz 30GHz 30GHz 28GHz, Vdd 5V - Min Typ Max Units 8 4 10 10 ± 0.5 10 12 - dB dB dB dB 19 - 22 50 90 130 - dBm mA mA °C/W P35-5126-000-200 Typical RFOW Performance (----- With Bondwires) P35-5126-000-200 Typical RFOW Performance Marconi Optical Components P35-5126-000-200 Typical RFOW Performance Typical S-parameters (RFOW) Frequency (GHz) Mag 20.00 20.25 20.50 20.75 21.00 21.25 21.50 21.75 22.00 22.25 22.50 22.75 23.00 23.25 23.50 23.75 24.00 24.25 24.50 24.75 25.00 25.25 25.50 25.75 26.00 26.25 26.50 26.75 27.00 27.25 0.66 0.67 0.67 0.67 0.67 0.67 0.67 0.66 0.65 0.64 0.62 0.60 0.58 0.56 0.54 0.52 0.49 0.47 0.45 0.42 0.40 0.37 0.35 0.32 0.30 0.28 0.25 0.23 0.21 0.19 S11 S21 S12 S22 Angle Mag Angle Mag Angle Mag Angle -49.9 -53.3 -56.9 -60.5 -64.5 -68.6 -72.6 -76.6 -80.7 -84.8 -88.7 -92.8 -96.2 -99.8 -103.2 -106.4 -109.5 -112.4 -114.9 -117.6 -119.9 -122.3 -124.3 -125.7 -127.1 -128.3 -129.2 -129.6 -129.7 -129.4 2.78 2.87 2.95 3.02 3.09 3.14 3.17 3.21 3.25 3.28 3.31 3.33 3.34 3.36 3.36 3.37 3.36 3.35 3.34 3.33 3.32 3.32 3.31 3.31 3.32 3.32 3.34 3.35 3.38 3.41 162.6 151.5 140.8 130.3 119.9 109.7 99.8 90.2 80.7 71.2 61.8 52.4 43.1 33.9 24.7 15.6 6.5 -2.3 -11.0 -19.7 -28.3 -37.0 -45.5 -54.0 -62.4 -70.8 -79.5 -88.2 -96.9 -105.6 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.002 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004 76.5 71.8 67.1 53.2 48.3 41.1 30.4 29.1 20.7 14.7 6.8 -4.2 -12.2 -5.1 -18.2 -19.6 -30.2 -37.5 -45.2 -47.9 -47.7 -54.0 -73.0 -84.0 -87.6 -92.2 -104.2 -111.7 -123.0 -143.7 0.13 0.14 0.15 0.15 0.16 0.17 0.18 0.19 0.19 0.20 0.20 0.21 0.21 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.22 0.21 0.21 -144.1 -142.9 -142.4 -142.0 -142.3 -143.4 -145.4 -147.1 -149.1 -151.4 -154.0 -156.5 -159.1 -161.6 -164.6 -167.1 -170.0 -172.7 -175.2 -178.0 179.2 176.2 173.3 170.8 168.3 166.0 163.2 160.5 158.1 156.5 P35-5126-000-200 Marconi Optical Components Typical S-parameters (RFOW) cont. Frequency (GHz) Mag 27.50 27.75 28.00 28.25 28.50 28.75 29.00 29.25 29.50 29.75 30.00 30.25 30.50 30.75 31.00 31.25 31.50 31.75 32.00 S11 0.16 0.13 0.11 0.08 0.07 0.09 0.12 0.16 0.21 0.27 0.33 0.40 0.46 0.52 0.57 0.61 0.65 0.67 0.70 S21 S22 Mag Angle Mag Angle Mag Angle -128.4 -125.8 -119.5 -105.6 -79.5 -52.8 -36.7 -29.1 -27.2 -27.6 -30.6 -34.8 -40.0 -46.0 -52.2 -58.1 -63.6 -68.6 -73.3 3.45 3.51 3.57 3.62 3.69 3.75 3.81 3.86 3.89 3.88 3.82 3.70 3.51 3.24 2.94 2.63 2.33 2.05 1.79 -114.6 -123.9 -133.5 -143.4 -153.6 -164.5 -175.9 172.3 159.8 146.4 132.4 117.9 103.2 88.5 74.5 61.3 48.9 37.1 26.1 0.004 0.004 0.004 0.004 0.004 0.005 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.007 0.006 0.006 0.005 0.005 0.004 -151.9 -163.3 -172.5 -166.1 -177.9 172.6 153.8 157.1 151.4 138.1 121.4 110.7 103.9 82.5 74.7 65.1 52.4 52.5 39.2 0.21 0.22 0.22 0.23 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.32 0.33 0.33 0.33 0.33 0.33 0.32 154.6 152.5 149.8 147.1 144.9 141.6 137.2 133.2 129.4 124.8 119.9 114.0 107.5 99.9 92.9 86.2 80.0 73.4 67.8 Pad Details Chip Outline Die size: RF bond pads (1 & 2): All other bond pads: Die Thickness: S12 Angle 2.05 x 1.14mm 80 x 80µm 120µm x 120µm 100µm Pad Function 1 2 3 4 5 6 7 8 9 10 RF Input RF Output Gnd Vd2 N/C Vg2 Vd1 N/C Vg1 Gnd P35-5126-000-200 Handling and Assembly Information Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. GaAs Products from MOC's H40P Foundry process are 100µm thick and have through GaAs vias to enable grounding to the circuit. Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. The surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. Eutectic mounting should be used and entails the use of a gold-tin (AuSn) preform, approximately 0.001² thick, placed between the die and the attachment surface. The preferred method of mounting is the use of a machine such as a Mullins 8-140 die bonder. This utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. Dry nitrogen gas is directed across the work piece. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280°C (Note: Gold Germanium with a higher melting temperature should be avoided, in particular for MMICs). The work station temperature should be 310°C ± 10°C. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. The strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. The P35-5126-000-200 amplifier die has gold bond pads. The recommended wire bonding procedure uses 25µm (0.001") 99.99% pure gold wire with 0.5-2% elongation. Thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. A work station temperature of 260°C ± 10°C with a wedge tip temperature of 120°C ± 10°C is recommended. The wedge force should be 45 ± 5 grams. Bonds should be made from the bond pads on the die to the package or substrate. The RF bond pads at the input and output are 100µm x 100µm; all other bond pads are 120µm x 120µm. The P35-5126-000-200 has been designed to include the inductance of a single 0.2mm length of 25µm bond wire at both the input and output, facilitating the integration of the die into a 50Ω environment. Operating and Biasing of the P35-5126-000-200 The P35-5126-000-200 is a two-stage amplifier. The drain bias for both stages (Vd1 & Vd2) should be set to 4.0 volts. The gate voltages (Vg1 & Vg2) are typically set to -0.3V(50% Idss) to give an Id1 of 50mA and Id2 of 90mA. The separate drain and gate voltage supplies for both stages can be combined into single supplies (Vdd & Vgg). DC bias supplies should be decoupled to ground using 100pF chip capacitors placed close to the chip with short bondwires to the amplifier bond pads. P35-5126-000-200 Typical Bonding Detail Absolute Maximum Ratings Max Vdd +7V Max Vgg -2V Max channel temperature 150°C Storage temperature -65°C to +150°C Marconi Optical Components P35-5126-000-200 Ordering Information: P35-5126-000-200 462/SM/02580/200 Iss 2 The data and product specifications are subject to change without notice. These devices should not be used for device qualification and production without prior notice. © Marconi Optical Components Ltd 2001 MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698 www.moc.marconi.com