BSP 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 295 50 V 1.8 A 0.3 Ω SOT-223 BSP 295 Type BSP 295 Ordering Code Q67000-S066 Pin 4 S D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 50 Unit V DGR RGS = 20 kΩ 50 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 34 ˚C 1.8 DC drain current, pulsed IDpuls TA = 25 ˚C 7.2 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 1.8 1 05.99 BSP 295 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 Unit ˚C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 50 - - 0.8 1.4 2 VDS = 50 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 ˚C - 8 50 VDS = 30 V, VGS = 0 V, Tj = 25 ˚C - - 100 Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 1.8 A - 0.25 0.3 VGS = 4.5 V, ID = 1.8 A - 0.45 0.5 Data Sheet 2 nA nA IGSS VGS = 20 V, VDS = 0 V µA 05.99 BSP 295 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A Input capacitance 0.5 - 320 425 - 110 170 - 50 75 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 1.7 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Rise time - 8 12 - 20 30 - 120 160 - 85 115 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Data Sheet 3 05.99 BSP 295 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 1.8 - - 7.2 V V SD VGS = 0 V, IF = 3.6 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 1.1 1.5 05.99 BSP 295 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 1.9 W A 1.6 Ptot 1.6 ID 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 TA 120 ˚C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25˚C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 295 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 4.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.9 kj Ptot = 2W ih gf l ID 3.2 VGS [V] a 2.0 b 2.5 c 3.0 d 3.5 d e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 2.8 2.4 2.0 1.6 b c d Ω A e a c 1.2 RDS (on) 0.7 0.6 0.5 0.4 e 0.3 k 0.2 0.8 b 0.1 0.4 VGS [V] = a 0.0 a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 A 3.8 VDS ID Typ. transfer characteristics ID = f(V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, ID f g i hj 4.5 2.2 A S gfs 3.5 1.8 1.6 3.0 1.4 2.5 1.2 2.0 1.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0.0 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 VGS Data Sheet 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0 ID 6 05.99 BSP 295 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.8 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 0.75 4.6 Ω V 0.65 4.0 RDS (on)0.60 VGS(th) 3.6 0.55 3.2 0.50 2.8 0.45 0.40 98% 2.4 typ 2.0 98% 0.35 0.30 0.25 1.6 0.20 1.2 typ 2% 0.15 0.8 0.10 0.4 0.05 0.00 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 1 pF A Ciss C 10 2 IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -2 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BSP 295 Safe operating area ID=f(V DS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99