BUZ 73L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G D Pin 3 S Type VDS ID RDS(on) Package Ordering Code BUZ 73 L 200 V 7A 0.4 Ω TO-220 AB C67078-S1328-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 ˚C Values Unit A 7 Pulsed drain current IDpuls TC = 25 ˚C 28 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax EAR 6.5 Avalanche energy, single pulse EAS mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 120 Gate source voltage VGS ESD-Sensitivity HBM as per MIL-STD 883 ± 20 Class 1 Power dissipation W Ptot TC = 25 ˚C 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 Data Sheet V 55 / 150 / 56 1 05.99 BUZ 73L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS 1.2 1.6 2 µA IDSS VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 3.5 A Data Sheet nA IGSS - 2 0.3 0.4 05.99 BUZ 73L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance 5 - 630 840 - 120 200 - 60 90 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 6.5 ns td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 15 20 - 60 90 - 100 130 - 40 50 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Data Sheet 3 05.99 BUZ 73L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TC = 25 ˚C Inverse diode direct current,pulsed - 28 V 1.1 1.7 ns trr - 140 µC Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet - - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 7 V SD VGS = 0 V, IF = 14 A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage - - 4 0.7 - 05.99 BUZ 73L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 45 7.5 A W 6.5 Ptot ID 35 6.0 5.5 30 5.0 4.5 25 4.0 3.5 20 3.0 15 2.5 2.0 10 1.5 1.0 5 0 0 0.5 0.0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TC ˚C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W t = 15.0µs p A ZthJC DS /I D ID =V 100 µs R DS (o n) 10 1 10 0 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 05.99 BUZ 73L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 16 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 40W Ω li h kj g f e A ID d 10 8 c 6 4 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 l 10.0 RDS (on) 1.0 0.8 0.7 0.6 0.5 0.4 d e hjf kig 0.3 b 0.2 VGS [V] = a 2.5 2.0 0.1 4 6 8 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 0.0 a 2 c 0.9 2 0 0 b 1.1 VGS [V] a 2.0 12 a V 12 0 2 4 6 8 10 VDS A 13 A 15 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 18 12 S A 10 ID gfs 14 12 9 8 7 10 6 8 5 6 4 3 4 2 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 0 VGS Data Sheet 2 4 6 8 10 12 ID 6 05.99 BUZ 73L Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 5 V RDS (on) Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 1.3 4.6 Ω V 1.1 4.0 VGS(th) 1.0 0.9 3.6 3.2 0.8 2.8 0.7 2.4 98% 0.6 98% 2.0 typ 1.6 typ 0.5 0.4 2% 1.2 0.3 0.2 0.8 0.1 0.4 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss 10 2 10 0 Coss Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS 7 05.99 BUZ 73L Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 130 16 mJ V 110 EAS VGS 100 12 90 0,2 VDS max 10 80 0,8 V DS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 Tj 10 20 30 40 50 60 70 80 nC 100 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99