DISCRETE SEMICONDUCTORS DATA SHEET 2PD602; 2PD602A NPN general purpose transistors Product specification Supersedes data of October 1993 File under Discrete Semiconductors, SC04 Philips Semiconductors November 1994 Philips Semiconductors Product specification NPN general purpose transistors 2PD602; 2PD602A FEATURES • Large collector current • Low collector-emitter saturation voltage 2 1 c • S-mini package. b APPLICATIONS e Intended for general purpose switching or amplification. 3 Top view MAM044 DESCRIPTION NPN transistor in a plastic SC59 package. Complementary pairs are 2PB710 and 2PB710A respectively. Fig.1 Simplified outline (SC59) and symbol. QUICK REFERENCE DATA MARKING TYPE NUMBER MARKING CODE 2PD602Q WQ 2PD602R WR 2PD602S WS 2PD602AQ XQ 2PD602AR XR 2PD602AS XS SYMBOL VCBO VCEO PARAMETER collector-base voltage DESCRIPTION open emitter − 30 V 2PD602A − 60 V 2PD602 − 25 V 2PD602A − 50 V − 1 A mW collector-emitter voltage open base ICM peak collector current Ptot total power dissipation up to Tamb = 25 °C − 250 hFE DC current gain IC = 150 mA; VCE = 10 V 85 340 fT transition frequency IE = −50 mA; VCB = 10 V 180 − MHz 180 − MHz 1 base 2 emitter 2PD602S 3 collector 2PD602AS November 1994 MIN. MAX. UNIT 2PD602 PINNING SC59 PIN CONDITIONS 2 Philips Semiconductors Product specification NPN general purpose transistors 2PD602; 2PD602A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − 30 V − 60 V 2PD602 − 25 V 2PD602A − 50 V 2PD602 2PD602A VCEO MIN. collector-emitter voltage open base VEBO emitter-base voltage − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector up to Tamb = 25 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient Note to the “Limiting values” and “Thermal characteristics” 1. Refer to SC59 standard mounting conditions. November 1994 3 in free air; note 1 VALUE UNIT 500 K/W Philips Semiconductors Product specification NPN general purpose transistors 2PD602; 2PD602A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO PARAMETER collector-base breakdown voltage CONDITIONS MIN. MAX. UNIT open emitter; IC = 10 µA; IE = 0 2PD602 30 − V 2PD602A 60 − V 2PD602 25 − V 2PD602A 50 − V collector-emitter breakdown voltage open base; IC = 2 mA; IB = 0; note 1 V(BR)EBO emitter-base breakdown voltage open collector; IE = −10 µA; IC = 0 5 − V VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 − 600 mV ICBO collector cut-off current VCB = 20 V; IE = 0 − 100 nA VCB = 20 V; IE = 0; Tj = 150 °C − 5 µA nA IEBO emitter cut-off current VEB = 4 V; IC = 0 − 100 hFE DC current gain VCE = 10 V; IC = 500 mA; note 1 40 − hFE DC current gain VCE = 10 V; IC = 150 mA; note 1 fT 2PD602Q; 2PD602AQ 85 170 2PD602R; 2PD602AR 120 240 2PD602S; 2PD602AS 170 340 140 − MHz 160 − MHz transition frequency 2PD602Q; 2PD602AQ VCB = 10 V; IE = −50 mA; f = 100 MHz; note 1 2PD602R; 2PD602AR 2PD602S; 2PD602AS Cc collector capacitance VCB = 10 V; IE = iE = 0; f = 1 MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. November 1994 4 180 − MHz − 15 pF Philips Semiconductors Product specification NPN general purpose transistors 2PD602; 2PD602A PACKAGE OUTLINE 1.3 1.0 0.26 0.10 0.100 0.013 0.6 0.2 A 1.7 1.3 1.65 1.25 2 3 0.50 0.35 2.1 3.1 1.7 2.7 1 0.2 M A 3.0 2.5 MSA313 - 1 Dimensions in mm. Fig.2 SC59. November 1994 5 Philips Semiconductors Product specification NPN general purpose transistors 2PD602; 2PD602A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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