DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jan 29 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES PINNING • Low current (100 mA) PIN • Low voltage (32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. handbook, halfpage DESCRIPTION 3 3 NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. 1 MARKING 1 TYPE NUMBER MARKING CODE BCW31 D1p BCW32 D2p BCW33 D3p 2 2 Top view MAM255 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base − 32 V ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = 2 mA; VCE = 5 V BCW31 110 220 BCW32 200 450 BCW33 fT 1997 Jan 29 transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 2 420 800 100 − MHz Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base; IC = 2 mA − 32 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit. 1997 Jan 29 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − TYP. − MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 32 V; Tj = 100 °C − − 10 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 10 µA; VCE = 5 V BCW31 − 90 − BCW32 − 150 − BCW33 − 270 − BCW31 110 − 220 BCW32 200 − 450 hFE DC current gain IE = 0; VCB = 32 V 100 nA IC = 2 mA; VCE = 5 V 420 − 800 collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 120 250 mV IC = 50 mA; IB = 2.5 mA − 210 − mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 750 − mV IC = 50 mA; IB = 2.5 mA − 850 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V 550 − 700 mV Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 2.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB BCW33 VCEsat 1997 Jan 29 4 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 PACKAGE OUTLINE Package description SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT23 1997 Jan 29 5 EUROPEAN PROJECTION ISSUE DATE Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jan 29 6 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 NOTES 1997 Jan 29 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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