ETC DCR1050F

DCR1050F
DCR1050F
Phase Control Thyristor
Advance Information
DS5550-1.0 June 2002
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
4200V
■ High Surge Capability
IT(AV)
1051A
ITSM
15000A
dVdt*
1000V/µs
dI/dt
200A/µs
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
*Higher dV/dt selections available
■ DC Motor Control
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
DCR1050F42
DCR1050F40
DCR1050F38
DCR1050F36
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
4200
4000
3800
3600
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1050F42
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1050F
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
1051
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1650
A
Continuous (direct) on-state current
-
1508
A
753
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1182
A
Continuous (direct) on-state current
-
1018
A
Conditions
Max.
Units
830
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1300
A
Continuous (direct) on-state current
-
1160
A
565
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
890
A
Continuous (direct) on-state current
-
770
A
IT
Half wave resistive load
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DCR1050F
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
12.0
kA
VR = 50% VRRM - 1/4 sine
0.72 x 106
A2s
10ms half sine; Tcase = 125oC
15.0
kA
VR = 0
1.125 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.022
o
Anode dc
-
0.038
o
Cathode dc
-
0.052
o
C/W
Double side
-
0.004
o
C/W
Single side
-
0.008
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
125
o
Clamping force
18.0
22.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 19.5kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1050F
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
150
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
75
A/µs
Rate of rise of on-state current
From 67% VDRM, IT = 1500A, Repetitive 50Hz
Gate source1.5A
tr ≤ 0.5µs. Tj = 125oC.
Non-repetitive
-
dI/dt
-
200
A/µs
Threshold voltage
At Tvj = 125oC
-
1.1
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.57
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
-
2.0
µs
IL
Latching current
Tj = 25oC, VD = 5V
350
900
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
230
600
mA
tq
Turn-off time
-
500
µs
Max.
Units
IRRM/IDRM
VT(TO)
IT = 3000A, tp = 1ms, Tj = 125˚C,
VRM = 900V, dIRR/dt = 5A/µs,
VDR = 2800V, dVDR/dt = 20V/µs linear
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
200
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table. fig. 4
150
W
PG(AV)
Mean gate power
10
W
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DCR1050F
CURVES
3500
4000
Measured under pulse conditions
6 phase
3000
3 phase
Half wave
2000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
d.c.
3000
Tj = 125˚C
2500
2000
1500
1000
1000
500
0
1.0
2.0
3.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
4.0
00
400
800
1200
Mean on-state current, IT(AV) - (A)
1600
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 1.458475
B = –0.098355
C = 0.000484
D = 0.012565
these values are valid for Tj = 125˚C for IT 500A to 4000A
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DCR1050F
IT
100
Total stored charge, QS - (µC)
Reverse recovery current, IRR - (A)
Max. QS
Min. QS
Max. IRR
Min. IRR
100
1000
10
pe
Up
r lim
it 9
5%
Tj = 125˚C
1000
10000
Gate trigger voltage, VGT - (V)
IRM
1
VGD
Conditions:
Tj = 125˚C, IT = 3000A
100
0.1
1.0
Lo
10
100
10
0.1
0.001
%
0.1
1
10
40
Anode side cooled
Double side cooled
0.01
Peak half sine wave on-state current - (kA)
I2t = Î2 x t
2
30
700
20
650
600
10
I2t
550
500
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
0
1
10
ms
1
2 3 45
10
I2t value - (A2s x 103)
Thermal Impedance - Junction to case - (˚C/W)
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Anode side
0.038
0.040
0.042
0.043
it 5
Fig.5 Gate characteristics
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
lim
Region of certain
triggering
Gate trigger current, IGT - (A)
Fig.4 Stored charge
Conduction
r
we
0.01
Rate of decay of on-state current, dI/dt - (A/µs)
0.1
0W
10
W
50
tp = 1.6ms
dI/dt
400
150
125
100
25
-
100
150
150
150
50
-
W
20
W
10
5W
50
150
150
150
150
20
100
200
500
1ms
10ms
QS
Table gives pulse power PGM in Watts
Frequency Hz
Pulse width
µs
Tj = 25˚C
Tj = -40˚C
10000
100000
450
20 30 50
Cycles at 50Hz
Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1050F
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø76 max
Ø48 nom
27.0
25.4
Ø1.5
Gate
Ø48 nom
Anode
Nominal weight: 450g
Clamping force: 19.5kN ± 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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