32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B(L)T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board. The HYM72V32M736B(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes memory. The HYM72V32M736B(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • PC133/PC100MHz support • SDRAM internal banks : four banks • 144pin SDRAM SO DIMM • Module bank : two physical bank • Serial Presence Detect with EEPROM • Auto refresh and self refresh • 1.25” (31.75mm) Height PCB with Double sided components • 8192 refresh cycles / 64ms • Programmable Burst Length and Burst Type • Single 3.3±0.3V power supply • All device pins are compatible with LVTTL interface • Data mask function by DQM - 1, 2, 4 or 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency HYM72V32M736BT6-H 133MHz HYM72V32M736BLT6-H 133MHz Internal Bank Ref. 4 Banks 8K Power Normal Low Power SDRAM Package Plating TSOP-II Gold This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1/May. 02 1 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series PIN DESCRIPTION PIN PIN NAME DESCRIPTION CK0, CK1 Clock Inputs The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE0 , CKE1 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh /S0, /S1 Chip Select Enables or disables all inputs except CK, CKE and DQM BA0, BA1 SDRAM Bank Address Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity A0 ~ A12 Address Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 /RAS, /CAS, /WE Row Address Strobe, Column Address Strobe, Write Enable /RAS, /CAS and /WE define the operation Refer function truth table for details DQM0~DQM7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ63 Data Input/Output Multiplexed data input / output pin CB0 ~ CB7 Data Input/Output Check bits VCC Power Supply (3.3V) Power supply for internal circuits and input buffers VSS Ground Ground SCL SPD Clock Input Serial Presence Detect Clock input SDA SPD Data Input/Output Serial Presence Detect Data input/output SA0~2 SPD Address Input Serial Presence Detect Address Input NC No Connection No connection Rev. 0.1/May. 02 2 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series PIN ASSIGNMENTS FRONT SIDE PIN NO. BACK SIDE NAME PIN NO. 1 VSS 3 DQ0 5 7 FRONT SIDE BACK SIDE NAME PIN NO. NAME PIN NO. NAME 2 VSS 71 /S1 72 NC 4 DQ32 73 NC 74 CK1 DQ1 6 DQ33 75 VSS 76 VSS DQ2 8 DQ34 77 CB2 78 CB6 9 DQ3 10 DQ35 79 CB3 80 CB7 11 VCC 12 VCC 81 VCC 82 VCC 13 DQ4 14 DQ36 83 DQ16 84 DQ48 15 DQ5 16 DQ37 85 DQ17 86 DQ49 17 DQ6 18 DQ38 87 DQ18 88 DQ50 19 DQ7 20 DQ39 89 DQ19 90 DQ51 21 VSS 22 VSS 91 VSS 92 VSS 23 DQM0 24 DQM4 93 DQ20 94 DQ52 25 DQM1 26 DQM5 95 DQ21 96 DQ53 27 VCC 28 VCC 97 DQ22 98 DQ54 29 A0 30 A3 99 DQ23 100 DQ55 31 A1 32 A4 101 VCC 102 VCC 33 A2 34 A5 103 A6 104 A7 35 VSS 36 VSS 105 A8 106 BA0 37 DQ8 38 DQ40 107 VSS 108 VSS 39 DQ9 40 DQ41 109 A9 110 BA1 41 DQ10 42 DQ42 111 A10 112 A11 43 DQ11 44 DQ43 113 VCC 114 VCC 45 VCC 46 VCC 115 DQM2 116 DQM6 47 DQ12 48 DQ44 117 DQM3 118 DQM7 49 DQ13 50 DQ45 119 VSS 120 VSS 51 DQ14 52 DQ46 121 DQ24 122 DQ56 53 DQ15 54 DQ47 123 DQ25 124 DQ57 55 VSS 56 VSS 125 DQ26 126 DQ58 57 CB0 58 CB4 127 DQ27 128 DQ59 59 CB1 60 CB5 129 VCC 130 VCC 131 DQ28 132 DQ60 Voltage Key 61 133 DQ29 134 DQ61 CKE0 135 DQ30 136 DQ62 64 VCC 137 DQ31 138 DQ63 66 /CAS 139 VSS 140 VSS /WE 68 CKE1 141 SDA 142 SCL /S0 70 A12 143 VCC 144 VCC CK0 62 63 VCC 65 /RAS 67 69 Rev. 0.1/May. 02 3 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series BLOCK DIAGRAM /S0 /S1 DQM5 /CS DQM0 DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 U0 /CS LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM3 DQM1 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CS DQM2 U5 /CS U1 LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 U2 /CS /CS LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM4 U7 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQM5 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CS LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U3 /CS LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CS DQM6 U6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM7 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 U8 U4 /CS LDQM DQO DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U9 UDQM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 Serial PD SCL SDA WP A0 A1 A2 SA0 SA1 SA2 10 Ohm DQn BA0-BA1 : SDRAMs U0 - U9 A0 - An : SDRAMs U0 - U9 10 Ohm CK0 /RAS : SDRAMs U0 - U9 /CAS : SDRAMs U0 - U9 CKE0 : SDRAMs U0 - U4 Every DQ pin of SDRAMs U0 - U4 10 Ohm CK1 U5 - U9 CKE1 : SDRAMs U5 - U9 /WE : SDRAMs U0 - U9 Note : 1. The serial resistor values of DQs are 10ohms Rev. 0.1/May. 02 4 PC133 SDRAM ECC SO DIMM SERIAL PRESENCE DETECT BYTE NUMBER FUNCTION DESCRIPTION HYM72V32M736B(L)T6 Series FUNCTION VALUE -H -H BYTE0 # of Bytes Written into Serial Memory at Module Manufacturer 128 Bytes 80h BYTE1 Total # of Bytes of SPD Memory Device 256 Bytes 08h BYTE2 Fundamental Memory Type SDRAM 04h BYTE3 # of Row Addresses on This Assembly 13 0Dh BYTE4 # of Column Addresses on This Assembly 9 09h BYTE5 # of Module Banks on This Assembly 2 Bank 02h BYTE6 Data Width of This Assembly 64 Bits 40h BYTE7 Data Width of This Assembly (Continued) BYTE8 Voltage Interface Standard of This Assembly - 00h LVTTL 01h BYTE9 SDRAM Cycle Time @/CAS Latency=3 7.5ns 75h BYTE10 Access Time from Clock @/CAS Latency=3 5.4ns 54h BYTE11 DIMM Configuration Type ECC 02h 7.8125us / Self Refresh Supported 82h BYTE12 Refresh Rate/Type BYTE13 Primary SDRAM Width x16 10h BYTE14 Error Checking SDRAM Width x16 10h BYTE15 Minimum Clock Delay Back to Back Random Column Address BYTE16 Burst Lenth Supported tCCD = 1 CLK 01h 1,2,4,8,Full Page 8Fh 4 Banks 04h /CAS Latency=2,3 06h BYTE17 # of Banks on Each SDRAM Device BYTE18 SDRAM Device Attributes, /CAS Lataency BYTE19 SDRAM Device Attributes, /CS Lataency /CS Latency=0 01h BYTE20 SDRAM Device Attributes, /WE Lataency /WE Latency=0 01h BYTE21 SDRAM Module Attributes Neither Buffered nor Registered 00h BYTE22 SDRAM Device Attributes, General +/- 10% voltage tolerence, Burst Read Single Bit Write, Precharge All, Auto Precharge, Early RAS Precharge 0Eh BYTE23 SDRAM Cycle Time @/CAS Latency=2 10ns A0h BYTE24 Access Time from Clock @/CAS Latency=2 6ns 60h BYTE25 SDRAM Cycle Time @/CAS Latency=1 - 00h BYTE26 Access Time from Clock @/CAS Latency=1 - 00h BYTE27 Minimum Row Precharge Time (tRP) 20ns 14h BYTE28 Minimum Row Active to Row Active Delay (tRRD) 15ns 0Fh BYTE29 Minimum /RAS to /CAS Delay (tRCD) 20ns 14h BYTE30 Minimum /RAS Pulse Width (tRAS) 45ns 2Dh BYTE31 Module Bank Density BYTE32 Command and Address Signal Input Setup Time BYTE33 Command and Address Signal Input Hold Time 0.8ns 08h BYTE34 Data Signal Input Setup Time 1.5ns 15h BYTE35 Data Signal Input Hold Time 0.8ns 08h TBD 00h Intel SPD 1.2B 12h BYTE36 ~61 Superset Information (may be used in future) BYTE62 SPD Revision BYTE63 Checksum for Byte 0~62 BYTE64 Manufacturer JEDEC ID Code BYTE65 ~71 ....Manufacturer JEDEC ID Code BYTE72 Manufacturing Location Rev. 0.1/May. 02 128MB 20h 1.5ns 15h - D4h Hynix JEDED ID ADh Unused FFh Hynix (Korea Area) HSA (United States Area) HSE (Europe Area) HSJ (Japan Area) HSS(Singapore) ASIA Area 0*h 1*h 2*h 3*h 4*h 5*h NOTE 1 2 3, 8 10 5 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series Continued BYTE NUMBER FUNCTION DESCRIPTION BYTE73 Manufacturer’s Part Number (Component) BYTE74 Manufacturer’s Part Number (128Mb based) BYTE75 Manufacturer’s Part Number (Voltage Interface) BYTE76 Manufacturer’s Part Number (Memory Width) BYTE77 ....Manufacturer’s Part Number (Memory Width) BYTE78 Manufacturer’s Part Number (Module Type) BYTE79 Manufacturer’s Part Number (Data Width) BYTE80 ....Manufacturer’s Part Number (Data Width) BYTE81 Manufacturer’s Part Number (Refresh, SDRAM Bank) BYTE82 BYTE83 BYTE84 Manufacturer’s Part Number (Component Configuration) FUNCTION VALUE -H -H NOTE 7 (SDRAM) 37h 4, 5 2 32h 4, 5 V (3.3V, LVTTL) 56h 4, 5 3 33h 4, 5 2 32h 4, 5 M (SO DIMM) 4Dh 4, 5 7 37h 4, 5 3 33h 4, 5 6 (8K Refresh, 4Banks) 36h 4, 5 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5 Manufacturer’s Part Number (Package Type) T 54h 4, 5 6 (x16 based) 36h 4, 5 - (Hyphen) 2Dh 4, 5 H 48h 4, 5 Blanks 20h 4, 5 BYTE85 Manufacturer’s Part Number (Hyphent) BYTE86 Manufacturer’s Part Number (Min. Cycle Time) BYTE87 ~90 Manufacturer’s Part Number BYTE91 Revision Code (for Component) Process Code - 4, 6 BYTE92 ....Revision Code (for PCB) Process Code - 4, 6 BYTE93 Manufacturing Date Year - 3, 6 BYTE94 ....Manufacturing Date BYTE95 ~98 BYTE99 ~125 Assembly Serial Number Manufacturer Specific Data (may be used in future) BYTE126 Reserved BYTE127 Intel Specification Details for 100MHz Support BYTE128 ~256 Unused Storage Locations Work Week - 3, 6 Serial Number - 6 None 00h 100MHz 64h 7, 8, 9 Refer to Note7 CFh 7, 8, 9 - 00h Note : 1. The bank address is excluded 2. 1, 2, 4, 8 for Interleave Burst Type 3. BCD adopted 4. ASCII adopted 5. Basically Hynix writes Part No. except for ‘HYM’ in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. Not fixed but dependent 7. CK0, CK1 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support 8. Refer to the most recent Intel and JEDEC SPD Specification 9. These values are applied to PC100 applications only per Intel PC SDRAM specification 10. Refer to Hynix Web site. Byte 82~87 for L-Part BYTE NUMBER FUNCTION DESCRIPTION FUNCTION VALUE -H -H NOTE BYTE82 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5 BYTE83 Manufacturer’s Part Number (Power) L 4Ch 4, 5 BYTE84 Manufacturer’s Part Number (Package Type) BYTE85 Manufacturer’s Part Number (Component Configuration) BYTE86 Manufacturer’s Part Number (Hyphent) BYTE87 Manufacturer’s Part Number (Min. Cycle Time) Rev. 0.1/May. 02 T 54h 4, 5 6 (x16 based) 36h 4, 5 - (Hyphen) 2Dh 4, 5 H 48h 4, 5 6 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 W Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (TA=0 to 70°C) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1 Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2 Input Low voltage VIL -0.3 0 0.8 V 1,3 Note : 1.All voltages are referenced to VSS = 0V 2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration. AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V) Parameter Symbol Value Unit AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement Note 1 Note : 1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output load circuit Rev. 0.1/May. 02 7 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series CAPACITANCE (TA=25°C, f=1MHz) -H Parameter Pin Symbol Max CI1 25 40 pF CKE0 , CKE1 CI2 20 30 pF /S0, /S1 CI3 20 30 pF A0~12, BA0, BA1 CI4 40 50 pF /RAS, /CAS, /WE CI5 38 45 pF CK0, CK1 Input Capacitance Data Input / Output Capacitance Unit Min DQM0~DQM7 CI6 8 15 pF DQ0 ~ DQ63 , CB0 ~ CB7 CI/O 10 15 pF OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF DC Output Load Circuit Rev. 0.1/May. 02 50pF AC Output Load Circuit 8 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V) Parameter Symbol Min. Max Unit Note -8 8 uA 1 Input Leakage Current ILI Output Leakage Current ILO -1 1 uA Output High Voltage VOH 2.4 - V IOH = -4mA Output Low Voltage VOL - 0.4 V IOL = +4mA 2 Note : 1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2.DOUT is disabled, VOUT=0 to 3.6 DC CHARACTERISTICS II Parameter Symbol Speed Test Condition -H Unit Note mA 1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA 990 CKE ≤ VIL(max), tCK = min 18 CKE ≤ VIL(max), tCK = ∞ 18 CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 180 IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 90 IDD3P CKE ≤ VIL(max), tCK = min 63 IDD3PS CKE ≤ VIL(max), tCK = ∞ 63 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 360 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 360 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 1080 mA 1 Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active 1980 mA 2 Self Refresh Current IDD6 CKE ≤ 0.2V Normal 36 mA 3 Low power 18 mA 4 Operating Current IDD1 IDD2P Precharge Standby Current in Power Down Mode IDD2PS IDD2N Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode mA mA mA mA Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. HYM72V32M736BT6-H 4. HYM72V32M736BLT6-H Rev. 0.1/May. 02 9 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -H Parameter Symbol Unit Min System Clock Cycle Time CAS Latency = 3 tCK3 Note Max 7.5 ns 1000 CAS Latency = 2 tCK2 10 ns Clock High Pulse Width tCHW 2.5 - ns 1 Clock Low Pulse Width tCLW 2.5 - ns 1 CAS Latency = 3 tAC3 - 5.4 ns CAS Latency = 2 tAC2 - 6 ns Access Time From Clock 2 Data-Out Hold Time tOH 2.7 - ns Data-Input Setup Time tDS 1.5 - ns 1 Data-Input Hold Time tDH 0.8 - ns 1 Address Setup Time tAS 1.5 - ns 1 Address Hold Time tAH 0.8 - ns 1 CKE Setup Time tCKS 1.5 - ns 1 CKE Hold Time tCKH 0.8 - ns 1 Command Setup Time tCS 1.5 - ns 1 Command Hold Time tCH 0.8 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - ns CAS Latency = 3 tOHZ3 2.7 5.4 ns CAS Latency = 2 tOHZ2 3 6 ns CLK to Data Output in High-Z Time Note : 1.Assume tR / tF (input rise and fall time ) is 1ns If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 0.1/May. 02 10 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series AC CHARACTERISTICS II -H Parameter Symbol Unit Min Max Operation tRC 65 - ns Auto Refresh tRRC 65 - ns RAS to CAS Delay tRCD 20 - ns RAS Active Time tRAS 45 100K ns RAS Precharge Time tRP 20 - ns RAS to RAS Bank Active Delay tRRD 15 - ns CAS to CAS Delay tCCD 1 - CLK Write Command to Data-In Delay tWTL 0 - CLK Data-In to Precharge Command tDPL 2 - CLK Data-In to Active Command tDAL 5 - CLK DQM to Data-Out Hi-Z tDQZ 2 - CLK DQM to Data-In Mask tDQM 0 - CLK MRS to New Command tMRD 2 - CLK CAS Latency = 3 tPROZ3 3 - CLK CAS Latency = 2 tPROZ2 2 - CLK Power Down Exit Time tPDE 1 - CLK Self Refresh Exit Time tSRE 1 - CLK Refresh Time tREF - 64 ms Note RAS Cycle Time Precharge to Data Output Hi-Z 1 Note : 1. A new command can be given tRRC after self refresh exit Rev. 0.1/May. 02 11 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series DEVICE OPERATING OPTION TABLE HYM72V32M736B(L)T6-H CAS Latency tRCD tRAS tRC tRP tAC tOH 133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns COMMAND TRUTH TABLE Command Mode Register Set CKEn-1 CKEn H X No Operation H X Bank Active H X Read CS RAS CAS DQM X OP code X X L L L L H X X X L H H H L L H H ADDR X RA H X L H L H X CA H X L H L L X CA H X L L H L X X Burst Stop H X L H H L X DQM H Auto Refresh H H L L L Burst-Read-SingleWRITE H X L L H L Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Entry Self Refresh X 1 Precharge power down Clock Suspend Exit L H Entry H L Exit L H Entry H L Exit L H BA H L H V V H X L V X X H X X L H X A9 Pin High (Other Pins OP code) X L L L H X X X H L H H H X X X L H H H H X X X L H H H H X X X L V V V X Note V L V H X A10/ AP WE X X X X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Rev. 0.1/May. 02 12 PC133 SDRAM ECC SO DIMM HYM72V32M736B(L)T6 Series PACKAGE DEMENSION 2.66 2.50 2-R 0.078 Min 0.24 0.13 . . 0.91 . 0.790 . . 1.250 0.16±0.039 1.29 2- 0.07 0.18 0.083 0.10 Z . . 0.01±Max 0 .157 Min 0 .024±0.001 0 .125 Min . . 0 .10 Min 0.150 Max 0.16±0.0039 0.06±0.0039 Y . 0.15 0.03 TYP 0.04±0.0039 Detail Z Tolerances : ±0.005 unless otherwise specified Rev. 0.1/May. 02 Detail Y Units : Inches 13