128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B(L)S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in 8pin TSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB. The HYM72V12C756B(L)S4 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 1Gbytes memory. The HYM72V12C756B(L)S4 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. •FEATURES PC100MHz support • SDRAM internal banks : four banks • 168pin SDRAM Registered DIMM • Module bank : two physical banks • Serial Presence Detect with EEPROM • Auto refresh and self refresh • 1.7” (43.18mm) Height PCB with double sided components • 8192 refresh cycles / 64ms • Programmable Burst Length and Burst Type • Single 3.3±0.3V power supply • All device pins are compatible with LVTTL interface • Data mask function by DQM - 1, 2, 4 or 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency HYM72V12C756BS4-P 100MHz HYM72V12C756BS4-S 100MHz HYM72V12C756BLS4-P 100MHz HYM72V12C756BLS4-S 100MHz Internal Bank Ref. Power SDRAM Package Plating TSOP-II Gold Normal 4 Banks 8K Low Power This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4/Dec.2002 1 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series PIN DESCRIPTION PIN PIN NAME DESCRIPTION CK0 Clock Inputs The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE0 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh /S0 ~ /S3 Chip Select Enables or disables all inputs except CK, CKE and DQM BA0, BA1 SDRAM Bank Address Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity A0 ~ A12 Address Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA9, CA11 Auto-precharge flag : A10 /RAS, /CAS, /WE Row Address Strobe, Column Address Strobe, Write Enable /RAS, /CAS and /WE define the operation Refer function truth table for details REGE Register Enable Register Enable pin which permits the DIMM to operateion in Buffered Mode when REGE input is Low, in Registered Mode when REGE input is High DQM0 ~ 7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ63 Data Input/Output Multiplexed data input / output pin VCC Power Supply (3.3V) Power supply for internal circuits and input buffers VSS Ground Ground SCL SPD Clock Input Serial Presence Detect Clock input SDA SPD Data Input/Output Serial Presence Detect Data input/output SA0~2 SPD Address Input Serial Presence Detect Address Input WP Write Protect for SPD Write Protect for Serial Presence Detect on DIMM ID1~3 Identification Detect Commend Interval, Read Precharge Timing, Power Detect NC No Connection No connection Rev. 0.4/Dec. 2002 2 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series PIN ASSIGNMENTS FRONT SIDE PIN NO. BACK SIDE FRONT SIDE BACK SIDE NAME PIN NO. NAME PIN NO. NAME PIN NO. 1 VSS 2 DQ0 85 VSS 41 VCC 125 NC 86 DQ32 42 CK0 126 A12 3 DQ1 87 4 DQ2 88 DQ33 43 VSS 127 VSS DQ34 44 NC 128 CKE0 5 DQ3 89 DQ35 45 /S2 129 /S3 6 VCC 90 VCC 46 DQM2 130 DQM6 7 DQ4 91 DQ36 47 DQM3 131 DQM7 8 DQ5 92 DQ37 48 NC 132 NC 9 DQ6 93 DQ38 49 VCC 133 VCC 10 DQ7 94 DQ39 50 NC 134 NC 51 NC 135 NC 52 CB2 136 CB6 Architecture Key NAME 11 DQ8 95 DQ40 53 CB3 137 CB7 12 VSS 96 VSS 54 VSS 138 VSS 13 DQ9 97 DQ41 55 DQ16 139 DQ48 14 DQ10 98 DQ42 56 DQ17 140 DQ49 15 DQ11 99 DQ43 57 DQ18 141 DQ50 16 DQ12 100 DQ44 58 DQ19 142 DQ51 17 DQ13 101 DQ45 59 VCC 143 VCC 18 VCC 102 VCC 60 DQ20 144 DQ52 19 DQ14 103 DQ46 61 NC 145 NC 20 DQ15 104 DQ47 62 NC 146 NC 21 CB0 105 CB4 63 NC 147 REGE 22 CB1 106 CB5 64 VSS 148 VSS 23 VSS 107 VSS 65 DQ21 149 DQ53 24 NC 108 NC 66 DQ22 150 DQ54 25 NC 109 NC 67 DQ23 151 DQ55 26 VCC 110 VCC 68 VCC 152 VCC 27 /WE 111 /CAS 69 DQ24 153 DQ56 28 DQM0 112 DQM4 70 DQ25 154 DQ57 29 DQM1 113 DQM5 71 DQ26 155 DQ58 30 /S0 114 /S1 72 DQ27 156 DQ59 31 NC 115 /RAS 73 VCC 157 VCC 32 VSS 116 VSS 74 DQ28 158 DQ60 33 A0 117 A1 75 DQ29 159 DQ61 34 A2 118 A3 76 DQ30 160 DQ62 35 A4 119 A5 77 DQ31 161 DQ63 36 A6 120 A7 78 VSS 162 VSS 37 A8 121 A9 79 CK2 163 *CK3 38 A10/AP 122 BA0 80 NC 164 NC 39 BA1 123 A11 81 WP 165 SA0 40 VCC 124 VCC 82 SDA 166 SA1 83 SCL 167 SA2 84 VCC 168 VCC Voltage Key Rev. 0.4/Dec. 2002 3 PC100 SDRAM Registered DIMM BLOCK DIAGRAM Rev. 0.4/Dec. 2002 HYM72V12C756B(L)S4 Series 4 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series SERIAL PRESENCE DETECT BYTE NUMBER FUNCTION DESCRIPTION FUNCTION VALUE -P -S -P -S # of Bytes Written into Serial Memory at Module Manufacturer 128 Bytes 80h BYTE1 Total # of Bytes of SPD Memory Device 256 Bytes 08h BYTE2 Fundamental Memory Type BYTE3 BYTE0 SDRAM 04h # of Row Addresses on This Assembly 13 0Dh BYTE4 # of Column Addresses on This Assembly 11 0Bh BYTE5 # of Module Banks on This Assembly 2 Bank 02h BYTE6 Data Width of This Assembly 72 Bits 48h BYTE7 Data Width of This Assembly (Continued) BYTE8 Voltage Interface Standard of This Assembly BYTE9 SDRAM Cycle Time @/CAS Latency=3 10ns 10ns A0h BYTE10 Access Time from Clock @/CAS Latency=3 6ns 6ns 60h BYTE11 DIMM Configuration Type BYTE12 Refresh Rate/Type BYTE13 BYTE14 BYTE15 Minimum Clock Delay Back to Back Random Column Address BYTE16 Burst Lenth Supported BYTE17 # of Banks on Each SDRAM Device BYTE18 SDRAM Device Attributes, /CAS Lataency BYTE19 SDRAM Device Attributes, /CS Lataency 00h 01h 60h 02h 7.8125us / Self Refresh Supported 82h Primary SDRAM Width x4 04h Error Checking SDRAM Width x4 04h SDRAM Device Attributes, /WE Lataency BYTE21 SDRAM Module Attributes SDRAM Device Attributes, General tCCD = 1 CLK 01h 1,2,4,8,Full Page 8Fh 4 Banks 04h CL=2,3 CL=3 1 A0h ECC BYTE20 BYTE22 LVTTL 06h 2 04h /CS Latency=0 01h /WE Latency=0 01h Registered inputs, with PLL 16h +/- 10% voltage tolerence, Burst Read Single Bit Write, Precharge All, Auto Precharge, Early RAS Precharge 0Eh BYTE23 SDRAM Cycle Time @/CAS Latency=2 10ns 12ns A0h C0h BYTE24 Access Time from Clock @/CAS Latency=2 6ns 6ns 60h 60h BYTE25 SDRAM Cycle Time @/CAS Latency=1 - - 00h 00h BYTE26 Access Time from Clock @/CAS Latency=1 - - 00h 00h BYTE27 Minimum Row Precharge Time (tRP) 20ns 20ns 14h 14h BYTE28 Minimum Row Active to Row Active Delay (tRRD) 20ns 20ns 14h 14h BYTE29 Minimum /RAS to /CAS Delay (tRCD) 20ns 20ns 14h 14h BYTE30 Minimum /RAS Pulse Width (tRAS) 50ns 50ns 32h BYTE31 Module Bank Density BYTE32 Command and Address Signal Input Setup Time 512MB 2ns 32h 80h 2ns 20h 20h BYTE33 Command and Address Signal Input Hold Time 1ns 1ns 10h 10h BYTE34 Data Signal Input Setup Time 2ns 2ns 20h 20h BYTE35 Data Signal Input Hold Time 1ns 1ns 10h BYTE36 ~61 Superset Information (may be used in future) BYTE62 SPD Revision BYTE63 Checksum for Byte 0~62 BYTE64 Manufacturer JEDEC ID Code BYTE65 ~71 ....Manufacturer JEDEC ID Code Rev. 0.4/Dec. 2002 - 10h 00h Intel SPD 1.2B - NOTE 12h 9Ah 3, 8 B8h Hynix JEDED ID ADh Unused FFh 5 BYTE NUMBER BYTE72 FUNCTION DESCRIPTION Manufacturing Location FUNCTION -P VALUE -S Hynix (Korea Area) HSA (United States Area) HSE (Europe Area) HSJ (Japan Area) HSS(Singapore) ASIA Area -P -S 0*h 1*h 2*h 3*h 4*h 5*h NOTE 9 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series Continued BYTE NUMBE R FUNCTION DESCRIPTION BYTE73 Manufacturer’s Part Number (Component) BYTE74 Manufacturer’s Part Number (256Mb based) BYTE75 Manufacturer’s Part Number (Voltage Interface) BYTE76 Manufacturer’s Part Number (Memory Width) FUNCTION -P VALUE -S -P -S NOTE 7 (SDRAM) 37h 4, 5 2 32h 4, 5 V (3.3V, LVTTL) 56h 4, 5 1 31h 4, 5 BYTE77 ....Manufacturer’s Part Number (Memory Width) 2 32h 4, 5 BYTE78 Manufacturer’s Part Number (Module Type) C 43h 4, 5 BYTE79 Manufacturer’s Part Number (Data Width) 7 37h 4, 5 BYTE80 ....Manufacturer’s Part Number (Data Width) BYTE81 Manufacturer’s Part Number (Refresh, SDRAM Bank) BYTE82 BYTE83 5 35h 4, 5 6 (8K Refresh, 4Banks) 36h 4, 5 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5 Manufacturer’s Part Number (Package Type) S 53h 4, 5 4 (x4 based) 34h 4, 5 - (Hyphen) 2Dh 4, 5 BYTE84 Manufacturer’s Part Number (Component Configuration) BYTE85 Manufacturer’s Part Number (Hyphent) BYTE86 Manufacturer’s Part Number (Min. Cycle Time) BYTE87 ~90 Manufacturer’s Part Number P S 50h 53h 4, 5 Blanks 20h 4, 5 4, 6 BYTE91 Revision Code (for Component) Process Code - BYTE92 ....Revision Code (for PCB) Process Code - 4, 6 BYTE93 Manufacturing Date Year - 3, 6 BYTE94 ....Manufacturing Date Work Week - 3, 6 Serial Number - 6 None 00h 100MHz 64h BYTE95 ~98 BYTE99 ~125 Assembly Serial Number Manufacturer Specific Data (may be used in future) BYTE126 System Frequency Support BYTE127 Intel Specification Details for 100MHz Support BYTE128 ~256 Unused Storage Locations Refer to Note7 8Fh - 7, 8 8Dh 7, 8 00h Note : 1. The bank address is excluded 2. 1, 2, 4, 8 for Interleave Burst Type 3. BCD adopted 4. ASCII adopted 5. Basically Hynix writes Part No. except for ‘HYM’ in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. Not fixed but dependent 7. CK0 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support 8. Refer to Intel SPD Specification 1.2B 9. Refer to Hynix web site Byte 82~87 for L-Part BYTE NUMBER BYTE82 FUNCTION DESCRIPTION Manufacturer’s Part Number(Manufacturing Site) FUNCTION -P VALUE -S -P -S B 42h NOTE 4, 5 BYTE83 Manufacturer’s Part Number (Power) L 4Ch 4, 5 BYTE84 Manufacturer’s Part Number (Package Type) S 53h 4, 5 BYTE85 Manufacturer’s Part Number (Component Configuration) 4 (x4 based) 34h 4, 5 Rev. 0.4/Dec. 2002 7 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 W Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (TA=0 to 70°C) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1 Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2 Input Low voltage VIL -0.3 0 0.8 V 1,3 Note Note : 1.All voltages are referenced to VSS = 0V 2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration. AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V) Parameter Symbol Value Unit AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement 1 Note : 1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output load circuit Rev. 0.4/Dec. 2002 8 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series CAPACITANCE (TA=25°C, f=1MHz) -P/S Parameter Pin Input Capacitance Data Input / Output Capacitance Symbol Unit Min Max CK0 CI1 - 20 pF CKE0 CI2 - 20 pF /S0, /S2 CI3 - 20 pF A0~11, BA0, BA1 CI4 - 20 pF /RAS, /CAS, /WE CI5 - 20 pF DQM0~DQM7 CI6 - 20 pF DQ0 ~ DQ63 CI/O - 20 pF OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF DC Output Load Circuit Rev. 0.4/Dec. 2002 50pF AC Output Load Circuit 9 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V) Parameter Symbol Min. Max Unit Note Input Leakage Current ILI -10 10 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -4mA Output Low Voltage VOL - 0.4 V IOL = +4mA Note : 1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2.DOUT is disabled, VOUT=0 to 3.6 DC CHARACTERISTICS II Parameter Symbol Speed Test Condition -P -S 2600 2600 IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA IDD2P CKE ≤ VIL(max), tCK = 15ns 440 IDD2PS CKE ≤ VIL(max), tCK = ∞ 76 IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V 1100 IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 300 IDD3P CKE ≤ VIL(max), tCK = 15ns 480 IDD3PS CKE ≤ VIL(max), tCK = ∞ 156 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V 1020 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 450 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active Self Refresh Current IDD6 CKE ≤ 0.2V Operating Current Precharge Standby Current in Power Down Mode Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode Unit Note mA 1 mA mA mA mA CL=3 3120 3120 CL=2 3120 3120 mA 1 4800 mA 2 Normal 368 mA 3 Low Power 150 mA 4 Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. HYM72V12C756BS4-P/S 4. HYM72V12C756BLS4-P/S Rev. 0.4/Dec. 2002 10 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -P Parameter Min CAS Latency = 3 -S Symbol tCK3 Max 10 Min CAS Latency = 2 Note 1000 ns 1 10 1000 System Clock Cycle Time Unit Max tCK2 10 12 Clock High Pulse Width tCHW 3 - 3 - ns 2 Clock Low Pulse Width tCLW 3 - 3 - ns 2 CAS Latency = 3 tAC3 - 6 - 6 ns CAS Latency = 2 tAC2 - 6 - 6 ns Data-Out Hold Time tOH 3 - 3 - ns Data-Input Setup Time tDS 2 - 2 - ns 2 Data-Input Hold Time tDH 1 - 1 - ns 2 Address Setup Time tAS 2 - 2 - ns 2 Address Hold Time tAH 1 - 1 - ns 2 CKE Setup Time tCKS 2 - 2 - ns 2 CKE Hold Time tCKH 1 - 1 - ns 2 Command Setup Time tCS 2 - 2 - ns 2 Command Hold Time tCH 1 - 1 - ns 2 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns CAS Latency = 3 tOHZ3 3 6 3 6 ns CAS Latency = 2 tOHZ2 3 6 3 6 ns 3 Access Time From Clock CLK to Data Output in HighZ Time Note : 1. In Registered DIMM, data is delayed an additional clock cycle due to the register (this is, Device CL + 1 = DIMM CL) 2.Assume tR / tF (input rise and fall time ) is 1ns, If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 3.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 0.4/Dec. 2002 11 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series AC CHARACTERISTICS II -P Parameter -S Symbol Unit Min Max Min Max Note Operation tRC 70 - 70 - ns Auto Refresh tRRC 70 - 70 - ns RAS to CAS Delay tRCD 20 - 20 - ns RAS Active Time tRAS 50 100K 50 100K ns RAS Precharge Time tRP 20 - 20 - ns RAS to RAS Bank Active Delay tRRD 20 - 20 - ns CAS to CAS Delay tCCD 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - CLK 1 Data-In to Precharge Command tDPL 2 - 2 - CLK 1 Data-In to Active Command tDAL 5 - 5 - CLK 1 DQM to Data-Out Hi-Z tDQZ 3 - 3 - CLK 1 DQM to Data-In Mask tDQM 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - CLK CAS Latency = 3 tPROZ3 4 - 4 - CAS Latency = 2 tPROZ2 3 - 3 - Power Down Exit Time tPDE 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - CLK Refresh Time tREF - 64 - 64 ms RAS Cycle Time Precharge to Data Output Hi-Z CLK 1 2 Note : 1. Timing delay due to the register is considered in a registered DIMM 2. A new command can be given tRRC after self refresh exit Rev. 0.4/Dec. 2002 12 PC100 SDRAM Registered DIMM DEVICE OPERATING OPTION TABLE HYM72V12C756B(L)S4 Series HYM72V12C756B(L)S4-P CAS Latency tRCD tRAS tRC tRP tAC tOH 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns HYM72V12C756B(L)S4-S CAS Latency tRCD tRAS tRC tRP tAC tOH 100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns Note : DIMM/CAS Latency = Device CL + 1 (Registered Mode) Rev. 0.4/Dec. 2002 13 PC100 SDRAM Registered DIMM HYM72V12C756B(L)S4 Series COMMAND TRUTH TABLE Command A10/ AP CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code No Operation H X H X X X L H H H X X Bank Active H X L L H H X H X L H L H X CA H X L H L L X CA H X L L H L X X Burst Stop H X L H H L X X DQM H V X Auto Refresh H H L L L H X X Burst-Read-SingleWRITE H X L L L H X A9 Pin High (Other Pins OP code) Entry H L L L L H X Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H H X X X L V V V Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh X 1 Precharge power down Clock Suspend Exit L H Entry H L Exit L H X X ADDR RA BA Note V L H L H V V H X L V X X X X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation Rev. 0.4/Dec. 2002 14 PC100 SDRAM Registered DIMM PACKAGE DEMENSION HYM72V12C756B(L)S4 Series 6.5 Max 1.27 Rev. 0.4/Dec. 2002 15