DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current (max. 800 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching • DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS 60 V − 75 V 2N2219 − 30 V 2N2219A − 40 V − 800 mA Tamb ≤ 25 °C − 800 mW 75 − 250 − collector-emitter voltage open base IC collector current (DC) Ptot total power dissipation hFE DC current gain IC = 10 mA; VCE = 10 V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2219 2N2219A turn-off time 1997 Sep 03 UNIT − 2N2219A toff MAX. open emitter 2N2219 VCEO MIN. ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA 2 MHz 300 − MHz − 250 ns Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2219 − 60 V 2N2219A − 75 V collector-emitter voltage 2N2219 open base − 30 V 2N2219A open base; IC ≤ 500 mA − 40 V 2N2219 − 5 V 2N2219A − 6 V emitter-base voltage open collector IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 800 mW Tcase ≤ 25 °C − 3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 Sep 03 CONDITIONS in free air 3 VALUE UNIT 190 K/W 50 K/W Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER MIN. MAX. UNIT collector cut-off current 2N2219 ICBO CONDITIONS IE = 0; VCB = 50 V − 10 nA IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA collector cut-off current 2N2219A IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA − 10 nA IEBO emitter cut-off current IC = 0; VEB = 3 V hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 − hFE DC current gain IC = 1 mA; VCE = 10 V 50 − hFE DC current gain IC = 10 mA; VCE = 10 V 75 − hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 − 2N2219A hFE DC current gain IC = 150 mA; VCE = 1 V; note 1 50 − hFE DC current gain IC = 150 mA; VCE = 10 V; note 1 100 300 hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 2N2219 30 − 2N2219A 40 − 2N2219 − 400 mV 2N2219A − 300 mV 2N2219 − 1.6 V 2N2219A − 1 V 2N2219 − 1.3 V 2N2219A 0.6 1.2 V 2N2219 − 2.6 V 2N2219A − 2 V − 8 pF − 25 pF 2N2219 250 − MHz 2N2219A 300 − MHz − 4 dB VCEsat VCEsat VBEsat VBEsat collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 Cc collector capacitance IE = ie = 0; VCB = 10 V Ce emitter capacitance IC = ic = 0; VEB = 500 mV 2N2219A fT F transition frequency noise figure 2N2219A 1997 Sep 03 IC = 20 mA; VCE = 20 V; f = 100 MHz; IC = 0.2 mA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4 Philips Semiconductors Product specification NPN switching transistors SYMBOL 2N2219; 2N2219A PARAMETER CONDITIONS MIN. MAX. UNIT Switching times (between 10% and 90% levels) for type 2N2219A; see Fig.2 − 35 ns − 15 ns rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns ton turn-on time td delay time tr ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Sep 03 5 oscilloscope Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 Sep 03 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 6 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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