VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure 4 GND GND 5 GND Vctrl 6 GND GND 7 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 15 16 17 18 19 20 21 GND N/C GND N/C Superior thermal design allows the product to have a minimum MTTF rating of 100 years at a mounting temperature of +85º C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surface-mount assembly. 22 GND GND The VG111 is a PCS / UMTS-band high dynamic range variable gain amplifier (VGA) packaged in a 6x6 mm surface-mount package. The +21 dBm output compression point and +40 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG111 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. N/C 1800 – 2200 MHz bandwidth 29 dB Attenuation Range +40 dBm Output IP3 +21 dBm P1dB Constant IP3 & P1dB over attenuation range • Single voltage supply • 6x6 mm 28-pin QFN package • MTTF > 100 years Functional Diagram GND • • • • • Product Description GND Product Features Product Information Function Gain Control No Connect RF Input RF Output / DC bias Ground Pin No 5 7, 19, 21 11 25 All other pins Backside copper Specifications Parameter Units Min Frequency Range Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Group Delay Supply Voltage Operating Amplifier Current Range Gain Control Pin Current Range Thermal Resistance Junction Temperature MHz dB dB dB dBm dBm dB dB V ns V mA mA °C / W °C 1800 12 Typ 1900 14 9 9 +21.5 +40 4.0 29 Max 2100 14 12 12 +21 +37.5 4.1 30 0 2200 Conditions See note 1 See note 2 VCTRL = 0 V See note 3 4.5 0.6 120 0 +5 150 180 25 59 160 Pin 25 Pin 5 draws no current at maximum gain See note 4 Test conditions unless otherwise noted. 1. T = 25ºC, Vdd = +5 V, Frequency = 800 MHz in an application circuit. 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured with 16 mA of current on gain control pin 5. 4. The junction temperature ensures a minimum MTBF rating of 1 million hours of usage. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Amplifier Supply Voltage (pin 25) Attenuation Control Voltage RF Input Power (continuous) Junction Temperature Rating -40 to +85 °C -55 to +125 °C +6 V +5.5 V +12 dBm +220° C Ordering Information Part No. Description VG111 VG111-PCB1900 VG111-PCB2100 PCS/UMTS-band Variable Gain Amplifier 1.8 – 2.0 GHz Fully Assembled Application Board 2.0 – 2.2 GHz Fully Assembled Application Board Operation of this device above any of these parameters may cause permanent damage. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Product Information Application Circuit: 1.8 – 2.0 GHz (VG111-PCB1900) Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness • • • • Bill of Materials Description 47 pF Chip Capacitor Do Not Place 0.01 µF Chip Capacitor 0.5 pF Chip Capacitor 22 nH Chip Inductor 100 Ω Chip Resistor 2.2 Ω Chip Resistor MMBT2222 Motorola Transistor VG111 Variable Gain Amplifier Ref. Des. C1, C7 C2, C5 C3, C4 C6 L1, L2 R1 R2 Q1 U1 Pins 7, 19, and 21 should not be connected. The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. DNP represents Do Not Place. Distances are shown from the edge-to-edge for the land pattern. S11, S22, S21 vs Gain Control Voltage frequency = 1900 MHz, 25°C S-Parameters Attenuation Control Voltage = 0 V, 25°C 16 -30 0.0 10 -10 S22 S11 8 -15 6 -20 f = 1.85 - 1.91 GHz -20 Normalized to the maximum gain level of 14 dB -10 0 -10 0 S22 Flatness (dB) -5 Gain 10 Normalized Gain (dB) S21 (dB) S21 12 Magnitude (dB) 0 Return Loss (dB) Normalized Gain 14 -0.5 f = 1.93 - 1.99 GHz -1.0 -1.5 Normalized to the maximum gain level of 14 dB S11 1800 1850 1900 1950 Frequency (MHz) 0 1 2 3 4 0 5 -5 Gain Control Voltage (V) Phase Shift vs. Normalized Gain frequency = 1900 MHz, 25°C -10 -15 -20 -25 Normalized Gain (dB) Output Intercept Point vs. Output Power frequency = 1900 MHz, 25°C OIP3 / P1dB vs. Normalized Gain frequency = 1900 MHz, Pout = +10 dBm, 25°C 40 40 0 OIP -5 -10 -15 -20 Magnitude (dBm) 35 OIP3 (dBm) Normalized Phase (deg) -2.0 10 -20 2000 0603 0603 0603 0603 0603 SOT-23 QFN 6x6 Gain Flatness 25°C 20 5 Size 0603 30 25 35 30 25 P1dB 20 -25 Normalized to the maximum gain level of 14 dB -30 15 20 0 -5 -10 -15 -20 Normalized Gain (dB) -25 -30 -5 0 5 10 15 0 -5 -10 -15 -20 Normalized Gain (dB) Output Power (dBm) This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Product Information Application Circuit: 2.0 – 2.2 GHz (VG111-PCB2100) Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness • • • • Ref. Des. C1, C7 C2 C3, C4 C5 C6 L1, L2 R1 R2 Q1 U1 Pins 7, 19, and 21 should not be connected. The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. DNP represents Do Not Place. Distances are shown from the edge-to-edge for the land pattern. Output Intercept Point vs. Output Power frequency = 2140 MHz, 25°C Bill of Materials Description 47 pF Chip Capacitor 0.2 pF Chip Capacitor 0.01 µF Chip Capacitor 0.6 pF Chip Capacitor Do Not Place 22 nH Chip Inductor 100 Ω Chip Resistor 2.2 Ω Chip Resistor MMBT2222 Motorola Transistor VG111 Variable Gain Amplifier Size 0603 0603 0603 0603 0603 0603 0603 SOT-23 QFN 6x6 OIP3 / P1dB vs. Normalized Gain frequency = 2140 MHz, Pout = +10 dBm, 25°C 40 40 Magnitude (dBm) OIP OIP3 (dBm) 35 30 25 35 30 25 P1dB 20 Normalized to the maximum gain level of 14 dB 15 20 0 5 10 15 -5 S-Parameters Attenuation Control Voltage = 0 V, 25°C 16 -5 10 -10 S11 S22 8 -15 -30 Normalized Gain Gain 10 Magnitude (dB) 0 12 -20 20 5 Gain -15 S11, S22, S21 vs Gain Control Voltage frequency = 2140 MHz, 25°C Return Loss (dB) Gain (dB) 14 -10 Normalized Gain (dB) Output Power (dBm) -20 Normalized to the maximumgain level of 14 dB 0 -10 -10 S22 0 -20 Normalized Gain (dB) -5 0 S11 6 2000 2100 2200 Frequency (MHz) -20 2300 -30 10 0 1 2 3 4 5 Gain Control Voltage (V) This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Product Information Outline Drawing Product Marking The component will be lasermarked with a “VG111” designator with a four-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information ESD Classification: Value: Test: Standard: Class 1B Passes 600 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Classification: Value: Test: Standard: Class IV Passes 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 1 at +250 °C convection reflow JEDEC Standard J-STD-020B Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND GND GND GND N/C GND N/C GND GND GND RF Output / Bias GND GND GND This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003