AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description x 50 – 2000 MHz The AH110 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +39 dBm OIP3 and +23 dBm of compressed 1-dB power and is housed in an industry standard SOT-89 SMT package. All devices are 100% RF and DC tested. x +23 dBm P1dB x +39 dBm Output IP3 x 20.5 dB Gain @ 900 MHz x 17.6 dB Gain @ 1900 MHz x Single Positive Supply (+8V) The product is targeted for use as a gain block/driver amplifier for various current and next generation wireless technologies such as GPRS, GSM and CDMA, where high linearity and medium power is required. In addition, the AH110 will work for numerous other applications within the 50 to 2000 MHz frequency range. x SOT-89 SMT Package Applications x Mobile Infrastructure x Defense/Homeland Security Specifications (1) Parameters Functional Diagram GND 4 1 2 3 RF IN GND RF OUT AH110-89 / AH110-89G Typical Performance (5) Units Test Frequency Gain Output P1dB Output OIP3 Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power MHz dB dBm dBm MHz dB dB dB dBm dBm Noise Figure Operating Current Range (3) Device Voltage (4) dB mA V @ -45 dBc ACPR, 1900 MHz Min 17 +36.5 Typ Max 900 20.5 +23 +39 1900 17.6 17 7.4 +23 +38 Parameters Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power (6) Noise Figure Supply Bias +16 85 5.2 100 5 Typical MHz dB dB dB dBm dBm dBm dB 900 1900 20.5 17.6 -20 -17 -9.5 -7.4 +22.8 +23 +39 +38 +17 +16 5 5.2 +8 V @ 100 mA 5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc = 100 mA, +25 C, Rbias = 30 . 6. This is measured with an IS-95 signal at (9 ch. Fwd)–45dBc ACPR. dBm Units 135 1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with Rbias = 30 . 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. The tuned application circuit is tuned for optimum ACPR performance. An improvement in OIP3 of 2 to 3 dB can be achieved for tuning for optimum OIP3 (with slightly degraded ACPR performance). 3. This corresponds to the quiescent current or operating current under small-signal conditions. 4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms are recommended for proper operation. Operation of the device directly to a 5 V supply could lead to thermal damage to the device. Absolute Maximum Rating Parameters Rating Ordering Information Part No. Description Operating Case Temperature -40 to +85 qC Storage Temperature -55 to +150 qC AH110-89G RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature +15 dBm +6 V 150 mA 1.5 W +250 qC AH110-89PCB900 AH110-89PCB1900 InGaP HBT Gain Block AH110-89 (leaded SOT-89 Pkg) InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) 900 MHz Evaluation Board 1900 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004 AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-parameters (Vdevice = +5V, Icc = 100 mA, 25 C, unmatched 50 ohm system) S11 0. 4 0 3. 25 1.0 Swp Max 2.01283GHz 2. 0 0 3. 0 4. 0 4. 5 .0 5. 0 0. 2 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 20 0.4 10.0 0 Gain (dB) 0.8 2. 0 DB(GMax) 6 0. 1.0 0.8 6 0. DB(|S[2,1]|) S22 Swp Max 2.01283GHz 0. 4 Gain / Maximum Stable Gain 30 -10.0 -3 .0 -1.0 Swp Min 0.01483GHz -0.8 -0 .6 .0 -2 2 -1.0 1.5 -0.8 1 Frequency (GHz) -0 .6 0.5 .4 .0 -2 -4 .0 -5 . 0 0 -0 -3 .0 .4 -0 10 2 -0 . -4 .0 -5 . 0 2 - 0. -10.0 15 Swp Min 0.01483GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 2500 MHz, with markers placed at 0.25 – 2 GHz in 0.25 GHz increments. S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2500 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -5.21 -4.92 -4.72 -4.31 -4.10 -4.19 -4.63 -5.64 -7.84 -13.52 -19.89 -6.99 -2.84 -1.18 -0.78 -158.20 -170.08 -177.73 173.22 163.26 152.57 140.41 126.43 109.08 83.27 -85.25 -131.98 -160.75 177.40 167.87 27.34 25.32 24.15 22.43 20.91 19.68 18.82 18.35 18.13 18.12 17.78 16.44 14.09 10.90 9.28 141.96 144.95 138.50 118.30 100.56 85.04 69.98 54.85 38.12 17.54 -7.75 -37.07 -64.48 -86.11 -96.04 -32.11 -31.61 -31.37 -30.63 -30.32 -29.78 -29.74 -29.31 -29.86 -31.16 -34.99 -34.48 -29.33 -26.64 -25.96 16.29 9.45 6.88 7.98 5.52 2.65 -2.18 -11.26 -26.72 -52.52 -105.12 161.53 106.22 75.52 66.16 -6.58 -7.49 -7.96 -8.46 -8.81 -9.07 -9.12 -8.95 -8.04 -6.16 -3.43 -1.36 -0.69 -0.93 -1.28 -132.30 -157.02 -171.72 178.73 174.06 171.40 169.67 170.98 175.14 179.09 176.43 164.56 149.67 136.25 130.16 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout C12 C7 C9 C8 Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors. The markers and vias are spaced in .050” increments. C7/C8 are for 900 MHz matching circuits and C9/C12 are for 1900 MHz matching circuits. . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004 AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH110-89PCB900) Typical RF Performance at 25qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 8v 900 MHz 20.5 dB -20 dB -9.5 dB +22.8 dBm +39 dBm Channel Power Noise Figure Device Voltage Quiescent Current CAP PORT ID= C6 P= 1 Z= 50 Ohm C= 56 pF +17 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) 5 dB +5 V 100 mA +85°C -40°C 900 920 940 -15 -20 -25 +25°C -30 +85°C -35 -40°C -40 840 860 P1 dB (dBm) 4 +25°C +85°C 880 900 920 940 920 940 -40 -50 +25°C 22 +85°C -40°C 20 840 860 880 900 32 920 940 Frequency (MHz) +85°C -40°C -70 12 13 920 940 38 36 -15 10 35 Temperature (°C) 60 15 16 17 18 OIP3 vs. Output Power Freq. = 900, 901 MHz, +25°C 42 32 -40 14 Output Channel Power (dBm) 34 900 940 +25°C -65 OIP3 (dBm) OIP3 (dBm) 34 920 -60 40 36 900 -55 OIP3 vs. Temperature Fre. = 900, 901 MHz, +9 dBm / tone 42 880 IS-95, 9 Ch. Fw d, ±885 KHz offset, 30 KHz Meas. BW, 900 MHz Frequency (MHz) 38 880 860 ACPR vs. Channel Power 23 OIP3 vs. Frequency +25°C, +9 dBm / tone 860 -40°C Frequency (MHz) -45 40 30 840 +85°C -25 840 24 Frequency (MHz) 42 900 21 -40°C 860 +25°C P1 dB vs. Frequency 25 6 0 840 -15 Frequency (MHz) Noise Figure vs. Frequency 2 -10 -20 880 Frequency (MHz) 8 S22 vs. Frequency -5 ACPR (dBc) 880 CAP ID= C5 C= 56 pF RES ID= R5 R= 50 Ohm 0 S22 (dB) S11 (dB) S21 (dB) +25°C 860 CAP ID= C1 C= 56 pF PORT P= 2 Z= 50 Ohm CAP ID= C8 C= 0.8 pF -10 20 NF (dB) CAP ID= C7 C= 5.6 pF S11 vs. Frequency 0 22 OIP3 (dBm) SUBCKT AH110 900 MHz -5 16 840 IND ID= L1 L= 10 nH C7 is placed at silkscreen marker ‘C’ or center of component placed at 5.6 deg. @ 900 MHz away from pin 1. C8 is placed at 22 deg. @ 900 MHz away from pin 3. S21 vs. Frequency 18 CAP ID= C3 CAP ID= C2 C= 1000 pF CAP ID= C4 C= 56 pF RES ID= R4 R= 22 Ohm Please see note 2 on page 1. 24 RES ID= R1 R= 30 Ohm 8.2v zener IND ID= L2 L= 33 nH (+9 dBm / tone, 1 MHz spacing) RES ID= R2 R= 390 Ohm RES ID= R3 R= 220 Ohm C = .1uF 40 38 36 34 32 85 6 7 8 9 10 11 12 Output Power (dBm) 13 14 . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004 AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier 1900 MHz Application Circuit (AH110-89PCB1900) Typical RF Performance at 25qC 1900 MHz 17.6 dB -17 dB -7.4 dB +23 dBm RES ID= R3 R= 220 Ohm +38 dBm Channel Power +16 dBm Noise Figure Device Voltage Quiescent Current 5.2 dB +5 V 100 mA (@-45 dBc ACPR, IS-95 9 channels fwd) 25 PORT P= 1 Z= 50 Ohm S11 (dB) S21 (dB) 20 +85°C 5 -40°C -10 -4 +85°C -6 -40°C +25°C -15 +85°C -40°C +25°C -8 -10 -12 1850 1870 1890 1910 1930 1950 1970 1990 Frequency (MHz) ACPR vs. Channel Power P1 dB vs. Frequency IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas. BW, 1900 MHz -35 -40 23 P1 dB (dBm) +25°C 2 +85°C 1 -40°C 21 19 +25°C +85°C 17 0 1850 1870 1890 1910 1930 1950 1970 1990 -40°C 15 1850 1870 1890 1910 1930 1950 1970 1990 Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25°C, +9 dBm / tone 40 Frequency (MHz) -60 11 12 13 14 15 16 17 18 Output Power (dBm) OIP3 vs. Output Power Freq. = 1900, 1901 MHz, 25°C 42 38 36 34 32 1850 1870 1890 1910 1930 1950 1970 1990 -55 10 OIP3 (dBm) OIP3 (dBm) 34 -50 -70 40 36 -45 -65 OIP3 vs. Temperature freq. = 1900, 1901 MHz, +9 dBm / tone 42 38 PORT P= 2 Z= 50 Ohm -2 25 3 CAP ID= C5 C= 56 pF S22 vs. Frequency Frequency (MHz) 4 CAP ID= C1 C= 56 pF CAP ID= C7 C= 1.5 pF -5 Noise Figure vs. Frequency 5 NF (dB) SUBCKT AH110 1.9GHz -25 1850 1870 1890 1910 1930 1950 1970 1990 6 42 IND ID= L1 L= 15 nH 0 Frequency (MHz) OIP3 (dBm) IND ID= L3 L= 1 nH CAP ID= C10 C= 0.7 pF -20 0 1850 1870 1890 1910 1930 1950 1970 1990 7 CAP ID= C2 C= 1000 pF S11 vs. Frequency 0 +25°C CAP ID= C4 C= 56 pF CAP ID= C3 C9 placed at silkscreen marker ‘8” or center of component placed at 39 deg. @ 1900 MHz away from pin 1. C12 is placed at silkscreen marker ‘I” or center of component placed at 43 deg. @ 1.9 GHz away from pin 1. S21 vs. Frequency 10 CAP ID= C6 C= 56 pF RES ID= R4 R= 22 Ohm Please see note 2 on page 1. 15 RES ID= R1 R= 30 Ohm 8.2v zener ACPR (dBc) C = .1uF IND ID= L2 L= 15 nH (+9 dBm / tone, 1 MHz spacing) RES ID= R2 R= 390 Ohm S22 (dB) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 8v 40 38 36 34 32 32 -40 -15 10 35 Temperature (°C) 60 6 85 7 8 9 10 11 12 13 14 Output Power (dBm) . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004 AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier AH110 (SOT-89 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “AH110” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85q C 128q C / W 149q C MTTF vs. GND Tab Temperature 100000 Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 100 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004 AH110 The Communications Edge TM Product Information 0.2 Watt, High Linearity InGaP HBT Amplifier AH110-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Product Marking Outline Drawing The component will be marked with an “ AH110G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: Land Pattern Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85q C 128q C / W 149q C 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100000 Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 100 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) . Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com December 2004