ETC AM49DL3208G

Am49DL3208G
Data Sheet
September 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 30450 Revision A
Amendment +1 Issue Date September 19, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am49DL3208G
Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and
8 Mbit (512 K x 16-Bit) Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
SOFTWARE FEATURES
■ Power supply voltage of 2.7 to 3.3 volt
■ Data Management Software (DMS)
■ High performance
— Access time as fast as 70 ns
■ Package
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■ Supports Common Flash Memory Interface (CFI)
— 69-Ball FBGA
■ Program/Erase Suspend/Erase Resume
■ Operating Temperature
— Suspends program/erase operations to allow
programming/erasing in same bank
— –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flexible Bank™ architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
■ Manufactured on 0.17 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
— Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■ Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■ Top or bottom boot sectors
■ Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast as 70 ns
— Program time: 4 µs/word typical utilizing Accelerate function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per sector
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
■ WP#/ACC input pin
— Write protect (WP#) function protects sectors 0 and 1
(bottom boot) or 69 and 70 (top boot), regardless of sector
protect status
— Acceleration (ACC) function accelerates program timing
■ Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Pseudo SRAM Features
■ Power dissipation
— Operating: 30 mA maximum
— Standby: 60 µA maximum at VCC = 3.0 V
■ High Performance
— Access time as fast as 55 ns
■ CE1ps# and CE2ps Chip Select
■ Power down features using CE1ps# and CE2ps
■ Data retention supply voltage: 2.7 to 3.3 volt
■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
■ 20 year data retention at 125°C
— Reliable operation for the life of the system
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 30450 Rev: A Amendment/+1
Issue Date: September 19, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
Am29DL320G Features
The Am29DL320G is a 32 megabit, 3.0 volt-only flash
memory device, organized as 2,097,152 words of 16
bits each. The device is designed to be programmed
in-system with the standard 3.0 volt V CC supply,
and can also be programmed in standard EPROM
programmers.
The device is available with an access time of 70 ns
and is offered in a 69-ball FBGA package. Standard
control pins—chip enable (CE#f), write enable (WE#),
and output enable (OE#)—control normal read and
write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into four banks, two 4 Mb banks with small and
large sectors, and two 12 Mb banks of large sectors
only. Sector addresses are fixed, system software can
be used to form user-defined bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can improve overall system performance by allowing a host
system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DL320G can be organized as both top and
bottom boot sector configurations. Top boot sector
configuration is as follows
Bank
Megabits
Bank 1
4 Mb
Bank 2
Bank 3
Bank 4
12 Mb
12 Mb
4 Mb
Sector Sizes
Eight 4 Kword,
Seven 32 Kword
Twenty-Four 32 Kword
Twenty-Four 32 Kword
Eight 32 Kword
Bottom boot configuration is as follows.
Bank
Bank 1
Bank 2
Bank 3
Bank 4
Megabits
4 Mb
12 Mb
12 Mb
4 Mb
Sector Sizes
Eight 32 Kword
Twenty-Four 72 Kword
Twenty-Four 72 Kword
Eight 4 Kword/Seven 32 Kword
The SecSi™ (Secured Silicon) Sector is an extra
256 byte sector capable of being permanently locked
by AMD or customers. The SecSi Indicator Bit (DQ7)
is permanently set to a 1 if the part is factory locked,
and set to a 0 if customer lockable. This way, cus2
tomer lockable parts can never be used to replace a
factory locked part.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (programmed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as a one-time programmable area.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s a n a d va n t a g e c o m p a r e d t o s ys te m s w h e r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software
does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD provides this software to simplify system design and software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both modes.
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5
Flash memory Block Diagram . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . 7
Special Package Handling Instructions .................................... 7
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
MCP Device Bus Operations. . . . . . . . . . . . . . . . . 9
Table 1. Device Bus Operations .....................................................10
Flash Device Bus Operations . . . . . . . . . . . . . . . 10
Requirements for Reading Array Data ................................... 10
Writing Commands/Command Sequences ............................ 11
Accelerated Program Operation ......................................................11
Autoselect Functions .......................................................................11
Simultaneous Read/Write Operations with Zero Latency ....... 11
Standby Mode ........................................................................ 11
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 12
Table 2. Top Boot Sector Addresses ............................................. 12
Table 3. Top Boot SecSi™ Sector Addresses ............................... 14
Table 4. Bottom Boot Sector Addresses ......................................... 14
Table 5. Bottom Boot SecSi™ Sector Addresses .......................... 15
Sector/Sector Block Protection and Unprotection .................. 16
Table 12. Command Definitions ..................................................... 28
Flash Write Operation Status. . . . . . . . . . . . . . . . 29
DQ7: Data# Polling ................................................................. 29
Figure 6. Data# Polling Algorithm .................................................. 29
RY/BY#: Ready/Busy# ............................................................ 30
DQ6: Toggle Bit I .................................................................... 30
Figure 7. Toggle Bit Algorithm ........................................................ 30
DQ2: Toggle Bit II ................................................................... 31
Reading Toggle Bits DQ6/DQ2 ............................................... 31
DQ5: Exceeded Timing Limits ................................................ 31
DQ3: Sector Erase Timer ....................................................... 31
Table 13. Write Operation Status................................................... 32
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 33
Figure 8. Maximum Negative Overshoot Waveform ...................... 33
Figure 9. Maximum Positive Overshoot Waveform ........................ 33
Flash DC Characteristics . . . . . . . . . . . . . . . . . . . 34
CMOS Compatible .................................................................. 34
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 35
Figure 11. Typical ICC1 vs. Frequency ............................................ 35
Pseudo SRAM DC and
Operating Characteristics . . . . . . . . . . . . . . . . . . 36
Figure 12. Standby Current ISB CMOS ......................................... 37
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 13. Test Setup .................................................................... 38
Figure 14. Input Waveforms and Measurement Levels ................. 38
Table 6. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection ............................................................. 16
Table 7. Bottom Boot Sector/Sector Block Addresses
for Protection/Unprotection ............................................................. 16
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39
Pseudo SRAM CE#s Timing ................................................... 39
Write Protect (WP#) ................................................................ 17
Temporary Sector Unprotect .................................................. 17
Read-Only Operations ........................................................... 40
Figure 1. Temporary Sector Unprotect Operation ...........................17
Figure 2. In-System Sector Protect/Unprotect Algorithms ..............18
Hardware Reset (RESET#) .................................................... 41
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 19
Word Configuration ................................................................ 42
Figure 3. SecSi Sector Protect Verify ..............................................20
Hardware Data Protection ...................................................... 20
Low VCC Write Inhibit .......................................................................20
Write Pulse “Glitch” Protection ........................................................20
Logical Inhibit ..................................................................................20
Power-Up Write Inhibit ....................................................................20
Common Flash Memory Interface (CFI) . . . . . . . 20
Table 8. CFI Query Identification String ..........................................21
Table 9. System Interface String..................................................... 22
Table 10. Device Geometry Definition ............................................22
Table 11. Primary Vendor-Specific Extended Query ......................23
Flash Command Definitions . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................ 24
Reset Command ..................................................................... 24
Autoselect Command Sequence ............................................ 24
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 24
Word Program Command Sequence ..................................... 25
Unlock Bypass Command Sequence ..............................................25
Figure 4. Program Operation ..........................................................26
Chip Erase Command Sequence ........................................... 26
Sector Erase Command Sequence ........................................ 26
Erase Suspend/Erase Resume Commands ........................... 27
Figure 5. Erase Operation ...............................................................27
September 19, 2003
Figure 15. Timing Diagram for Alternating
Between Pseudo SRAM and Flash ................................................ 39
Figure 16. Read Operation Timings ............................................... 40
Figure 17. Reset Timings ............................................................... 41
Figure 18. CIOf Timings for Read Operations ................................ 42
Figure 19. CIOf Timings for Write Operations ................................ 42
Flash Erase and Program Operations .................................... 43
Figure 20. Program Operation Timings .......................................... 44
Figure 21. Accelerated Program Timing Diagram .......................... 44
Figure 22. Chip/Sector Erase Operation Timings .......................... 45
Figure 23. Back-to-back Read/Write Cycle Timings ...................... 46
Figure 24. Data# Polling Timings (During Embedded Algorithms) . 46
Figure 25. Toggle Bit Timings (During Embedded Algorithms) ...... 47
Figure 26. DQ2 vs. DQ6 ................................................................. 47
Temporary Sector Unprotect .................................................. 48
Figure 27. Temporary Sector Unprotect Timing Diagram .............. 48
Figure 28. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 49
Alternate CE#f Controlled Erase and Program Operations .... 50
Figure 29. Flash Alternate CE#f Controlled Write (Erase/Program)
Operation Timings .......................................................................... 51
Pseudo SRAM AC Characteristics . . . . . . . . . . . 52
Power Up Time ....................................................................... 52
Read Cycle ............................................................................. 52
Figure 30. Pseudo SRAM Read Cycle—Address Controlled ......... 52
Figure 31. Pseudo SRAM Read Cycle ........................................... 53
Write Cycle ............................................................................. 54
Figure 32. Pseudo SRAM Write Cycle—WE# Control ................... 54
Figure 33. Pseudo SRAM Write Cycle—CE1#s Control ................ 55
Am49DL3208G
3
A D V A N C E
I N F O R M A T I O N
Figure 34. Pseudo SRAM Write Cycle—
UB#s and LB#s Control ...................................................................56
Flash Erase And Programming Performance . . 57
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 57
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 57
4
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 57
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 58
TLB069—69–Ball Fine-Pitch Grid Array 8 x 10 mm ............... 58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Speed
Options
Am49DL3208G
Standard Voltage Range:
VCC = 2.7–3.3 V
Flash Memory
Pseudo SRAM
71
70
71
70
Max Access Time (ns)
70
70
55
70
CE#f Access (ns)
70
70
55
70
OE# Access (ns)
30
30
30
35
MCP BLOCK DIAGRAM
VCCf
VSS
A20 to A0
RY/BY#
A20 to A0
WP#/ACC
RESET#
CE#f
32 MBit
Flash Memory
DQ15 to DQ0
DQ15 to DQ0
VCCs/VCCQ
VSS/VSSQ
A0
toto
A19
A18
A0
SA
LB#ps
UB#ps
WE#
OE#
CE1#ps
CE2ps
September 19, 2003
8 MBit
Pseudo
SRAM
Am49DL3208G
DQ15 to DQ0
5
A D V A N C E
I N F O R M A T I O N
FLASH MEMORY BLOCK DIAGRAM
VCC
VSS
OE#
Mux
Bank 1
Bank 2
X-Decoder
A20–A0
RESET#
WE#
CE#
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ15–DQ0
Control
Mux
DQ15–DQ0
DQ15–DQ0
Bank 3 Address
Bank 3
X-Decoder
Bank 4 Address
Y-gate
A20–A0
X-Decoder
A20–A0
DQ15–DQ0
Bank 2 Address
DQ15–DQ0
RY/BY#
DQ15–DQ0
A20–A0
X-Decoder
Y-gate
Bank 1 Address
A20–A0
Bank 4
Mux
6
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAM
69-Ball FBGA
Top View
A1
A5
A6
A10
NC
NC
NC
NC
B5
B6
B1
B3
NC
A7
B4
B7
B8
A8
A11
C7
C8
C9
UB#ps RESET# CE2ps
A19
A12
A15
LB#ps WP/ACC# WE#
C3
A3
A6
D2
D3
D4
E5
E6
D7
D8
D9
A2
A5
A18
RY/BY#
A20
A9
A13
NC
E1
E2
E3
E4
E7
E8
E9
E10
NC
A1
A4
A17
A10
A14
NC
NC
F1
F2
F3
F4
F7
F8
F9
F10
NC
A0
VSS
DQ1
DQ6
NC
A16
NC
G2
G3
G4
G5
G6
G7
G8
G9
CE#f
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
BYTE#*
H2
H3
H4
H5
H6
H7
H8
H9
CE1#ps
DQ0
DQ10
VCCf
VCCps
DQ12
DQ7
VSS
G3
G4
G5
G6
G7
G8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
H1
H5
H6
H10
NC
NC
NC
NC
C5
C6
Pseudo
SRAM only
Shared
C2
C4
Flash only
* It is recommended to tie BYTE# to Vcc
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (BGA). The package and/or data
September 19, 2003
integrity may be compromised if the package body is
exposed to temperatures above 150°C for prolonged
periods of time.
Am49DL3208G
7
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
A18–A0
LOGIC SYMBOL
= 19 Address Inputs (Common)
19
A20–A19, A-1 = 3 Address Inputs (Flash)
A18–A0
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f
= Chip Enable (Flash)
CE1#ps
= Chip Enable 1 (PSRAM)
A20–A19
CE2ps
= Chip Enable 2 (PSRAM)
CE#f
OE#
= Output Enable (Common)
CE1#ps
WE#
= Write Enable (Common)
CE2ps
RY/BY#
= Ready/Busy Output
OE#
UB#ps
= Upper Byte Control (PSRAM)
WE#
LB#ps
= Lower Byte Control (PSRAM)
WP#/ACC
RESET#
= Hardware Reset Pin, Active Low
WP#/ACC
= Hardware Write Protect/
Acceleration Pin (Flash)
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCCps
= PSRAM Power Supply
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
8
16 or 8
DQ15–DQ0
RY/BY#
RESET#
UB#ps
Am49DL3208G
LB#ps
September 19, 2003
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am49DL320
8
G
T
71
I
T
TAPE AND REEL
T
= 7 inches
S
= 13 inches
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT SECTOR
T
= Top boot
B
= Bottom boot
PROCESS TECHNOLOGY
G
= 0.17 µm
PSEUDO SRAM DEVICE DENSITY
8
=
8 Mbits
AMD DEVICE NUMBER/DESCRIPTION
Am49DL3208G
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL320G 32 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash
Memory and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
MCP DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
September 19, 2003
Valid Combinations
Order Number
Package Marking
Am49DL3208GT70I
Am49DL3208GB70I
T, S
M490000032
M490000033
Am49DL3208GT71I
Am49DL3208GB71I
T, S
M490000034
M490000035
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Tables 1-3 lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am49DL3208G
9
A D V A N C E
Table 1.
Operation
(Notes 1, 2)
CE#f
X
X
L
H
X
X
L
VCC ±
0.3 V
H
X
X
L
Output Disable
L
L
H
Flash Hardware
Reset
X
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
L
Write to Flash
L
Standby
Sector Protect
(Note 5)
L
Sector Unprotect
(Note 5)
L
Temporary Sector
Unprotect
X
Read from PSRAM
Write to PSRAM
H
H
Device Bus Operations
CE1#s CE2s OE# WE#
H
Read from Flash
I N F O R M A T I O N
L
L
H
H
Addr.
LB#s UB#s RESET#
WP#/ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
L
H
AIN
X
X
H
L/H
DOUT
DOUT
H
L
AIN
X
X
H
(Note 4)
DIN
DIN
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
H
H
X
L
X
H
H
X
X
L
H
L/H
High-Z
High-Z
X
X
X
X
X
L
L/H
High-Z
High-Z
L
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
VID
L/H
DIN
X
H
L
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
L
L
DOUT
DOUT
H
L
X
H
L
AIN
AIN
H
L
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
L
H
DIN
High-Z
H
H
X
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, X = Don’t Care, SADD = Flash Sector Address, AIN =
Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
FLASH DEVICE BUS OPERATIONS
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE#f and OE# pins to VIL. CE#f is the power
control and selects the device. OE# is the output con-
10
trol and gates array data to the output pins. WE#
should remain at V I H . The CIOf pin deter mines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Refer to the AC Read-Only Operations table for timing
specifications and to Figure 16 for the timing diagram.
ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE#f to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The “Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 4 indicate the
address space that each sector occupies. Similarly, a
“sector address” is the address bits required to
uniquely select a sector. The “Flash Command Definitions” section has details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
The device address space is divided into four banks. A
“bank address” is the address bits required to uniquely
select a bank.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The Flash
AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
September 19, 2003
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
See “Write Protect (WP#)” on page 17 for related information.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Sector/Sector Block Protection
and Unprotection and Autoselect Command Sequence sections for more information.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being
erased). Figure 23 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6f and ICC7f in the table represent the current specifications for read-while-program and
read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE#f and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
V IH .) If CE#f and RESET# are held at V IH , but not
within VCC ± 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3f in the table represents the standby current specification.
Am49DL3208G
11
A D V A N C E
I N F O R M A T I O N
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
30 ns. The automatic sleep mode is independent of
the CE#f, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC5f in the table represents the automatic sleep mode
current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
Bank 3
Bank 4
Bank
Table 2.
12
draws CMOS standby current (I CC4 f). If RESET# is
held at VIL but not within VSS±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 17 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Top Boot Sector Addresses
Sector
Sector Address
A20–A12
Sector Size
(Kwords)
SA0
000000xxx
32
000000h–07FFFh
SA1
000001xxx
32
008000h–0FFFFh
SA2
000010xxx
32
010000h–17FFFh
SA3
000011xxx
32
018000h–01FFFFh
SA4
000100xxx
32
020000h–027FFFh
SA5
000101xxx
32
028000h–02FFFFh
SA6
000110xxx
32
030000h–037FFFh
SA7
000111xxx
32
038000h–03FFFFh
SA8
001000xxx
32
040000h–047FFFh
SA9
001001xxx
32
048000h–04FFFFh
SA10
001010xxx
32
050000h–057FFFh
SA11
001011xxx
32
058000h–05FFFFh
SA12
001100xxx
32
060000h–067FFFh
SA13
001101xxx
32
068000h–06FFFFh
SA14
001110xxx
32
070000h–077FFFh
SA15
001111xxx
32
078000h–07FFFFh
SA16
010000xxx
32
080000h–087FFFh
SA17
010001xxx
32
088000h–08FFFFh
SA18
010010xxx
32
090000h–097FFFh
Am49DL3208G
(x16)
Address Range
September 19, 2003
A D V A N C E
Bank 1
Bank 2
Bank 3 (continued)
Bank
Table 2.
Sector
I N F O R M A T I O N
Top Boot Sector Addresses (Continued)
Sector Address
A20–A12
Sector Size
(Kwords)
(x16)
Address Range
SA19
010011xxx
32
098000h–09FFFFh
SA20
010100xxx
32
0A0000h–0A7FFFh
SA21
010101xxx
32
0A8000h–0AFFFFh
SA22
010110xxx
32
0B0000h–0B7FFFh
SA23
010111xxx
32
0B8000h–0BFFFFh
SA24
011000xxx
32
0C0000h–0C7FFFh
SA25
011001xxx
32
0C8000h–0CFFFFh
SA26
011010xxx
32
0D0000h–0D7FFFh
SA27
011011xxx
32
0D8000h–0DFFFFh
SA28
011100xxx
32
0E0000h–0E7FFFh
SA29
011101xxx
32
0E8000h–0EFFFFh
SA30
011110xxx
32
0F0000h–0F7FFFh
SA31
011111xxx
32
0F8000h–0FFFFFh
SA32
100000xxx
32
100000h–107FFFh
SA33
100001xxx
32
108000h–10FFFFh
SA34
100010xxx
32
110000h–117FFFh
SA35
100011xxx
32
118000h–11FFFFh
SA36
100100xxx
32
120000h–127FFFh
SA37
100101xxx
32
128000h–12FFFFh
SA38
100110xxx
32
130000h–137FFFh
SA39
100111xxx
32
138000h–13FFFFh
SA40
101000xxx
32
140000h–147FFFh
SA41
101001xxx
32
148000h–14FFFFh
SA42
101010xxx
32
150000h–157FFFh
SA43
101011xxx
32
158000h–15FFFFh
SA44
101100xxx
32
160000h–167FFFh
SA45
101101xxx
32
168000h–16FFFFh
SA46
101110xxx
32
170000h–177FFFh
SA47
101111xxx
32
178000h–17FFFFh
SA48
110000xxx
32
180000h–187FFFh
SA49
110001xxx
32
188000h–18FFFFh
SA50
110010xxx
32
190000h–197FFFh
SA51
110011xxx
32
198000h–19FFFFh
SA52
110100xxx
32
1A0000h–1A7FFFh
SA53
110101xxx
32
1A8000h–1AFFFFh
SA54
110110xxx
32
1B0000h–1B7FFFh
SA55
110111xxx
32
1B8000h–1BFFFFh
SA56
111000xxx
32
1C0000h–1C7FFFh
SA57
111001xxx
32
1C8000h–1CFFFFh
SA58
111010xxx
32
1D0000h–1D7FFFh
SA59
111011xxx
32
1D8000h–1DFFFFh
SA60
111100xxx
32
1E0000h–1E7FFFh
SA61
111101xxx
32
1E8000h–1EFFFFh
SA62
111110xxx
32
1F0000h–1F7FFFh
SA63
111111000
4
1F8000h–1F8FFFh
SA64
111111001
4
1F9000h–1F9FFFh
SA65
111111010
4
1FA000h–1FAFFFh
SA66
111111011
4
1FB000h–1FBFFFh
SA67
111111100
4
1FC000h–1FCFFFh
SA68
111111101
4
1FD000h–1FDFFFh
SA69
111111110
4
1FE000h–1FEFFFh
SA70
111111111
4
1FF000h–1FFFFFh
Note: The address range is A20:A0 in word mode. The bank address bits are A20–A18.
September 19, 2003
Am49DL3208G
13
A D V A N C E
Table 3.
Top Boot SecSi™ Sector Addresses
Device
Sector Address
A20–A12
Sector Size
(Words)
(x16)
Address Range
Am29DL320GT
111111xxx
128
1F0000h–1FF07Fh
Bank 2
Bank 1
Table 4.
14
I N F O R M A T I O N
Bottom Boot Sector Addresses
Sector
Sector Address
A20–A12
Sector Size
(Kwords)
(x16)
Address Range
SA0
000000000
4
000000h–000FFFh
SA1
000000001
4
001000h–001FFFh
SA2
000000010
4
002000h–002FFFh
SA3
000000011
4
003000h–003FFFh
SA4
000000100
4
004000h–004FFFh
SA5
000000101
4
005000h–005FFFh
SA6
000000110
4
006000h–006FFFh
SA7
000000111
4
007000h–007FFFh
SA8
000001xxx
32
008000h–00FFFFh
SA9
000010xxx
32
010000h–017FFFh
SA10
000011xxx
32
018000h–01FFFFh
SA11
000100xxx
32
020000h–027FFFh
SA12
000101xxx
32
028000h–02FFFFh
SA13
000110xxx
32
030000h–037FFFh
SA14
000111xxx
32
038000h–03FFFFh
SA15
001000xxx
32
040000h–047FFFh
SA16
001001xxx
32
048000h–04FFFFh
SA17
001010xxx
32
050000h–057FFFh
SA18
001011xxx
32
058000h–05FFFFh
SA19
001100xxx
32
060000h–067FFFh
SA20
001101xxx
32
068000h–06FFFFh
SA21
001110xxx
32
070000h–077FFFh
SA22
001111xxx
32
078000h–07FFFFh
SA23
010000xxx
32
080000h–087FFFh
SA24
010001xxx
32
088000h–08FFFFh
SA25
010010xxx
32
090000h–097FFFh
SA26
010011xxx
32
098000h–09FFFFh
SA27
010100xxx
32
0A0000h–0A7FFFh
SA28
010101xxx
32
0A8000h–0AFFFFh
SA29
010110xxx
32
0B0000h–0B7FFFh
SA30
010111xxx
32
0B8000h–0BFFFFh
SA31
011000xxx
32
0C0000h–0C7FFFh
SA32
011001xxx
32
0C8000h–0CFFFFh
SA33
011010xxx
32
0D0000h–0D7FFFh
SA34
011011xxx
32
0D8000h–0DFFFFh
SA35
011100xxx
32
0E0000h–0E7FFFh
SA36
011101xxx
32
0E8000h–0EFFFFh
SA37
011110xxx
32
0F0000h–0F7FFFh
SA38
011111xxx
32
0F8000h–0FFFFFh
Am49DL3208G
September 19, 2003
A D V A N C E
Bank 4
Bank 3
Table 4.
I N F O R M A T I O N
Bottom Boot Sector Addresses (Continued)
Sector
Sector Address
A20–A12
Sector Size
(Kwords)
(x16)
Address Range
SA39
100000xxx
32
100000h–107FFFh
SA40
100001xxx
32
108000h–10FFFFh
SA41
100010xxx
32
110000h–117FFFh
SA42
100011xxx
32
118000h–11FFFFh
SA43
100100xxx
32
120000h–127FFFh
SA44
100101xxx
32
128000h–12FFFFh
SA45
100110xxx
32
130000h–137FFFh
SA46
100111xxx
32
138000h–13FFFFh
SA47
101000xxx
32
140000h–147FFFh
SA48
101001xxx
32
148000h–14FFFFh
SA49
101010xxx
32
150000h–157FFFh
SA50
101011xxx
32
158000h–15FFFFh
SA51
101100xxx
32
160000h–167FFFh
SA52
101101xxx
32
168000h–16FFFFh
SA53
101110xxx
32
170000h–177FFFh
SA54
101111xxx
32
178000h–17FFFFh
SA55
111000xxx
32
180000h–187FFFh
SA56
110001xxx
32
188000h–18FFFFh
SA57
110010xxx
32
190000h–197FFFh
SA58
110011xxx
32
198000h–19FFFFh
SA59
110100xxx
32
1A0000h–1A7FFFh
SA60
110101xxx
32
1A8000h–1AFFFFh
SA61
110110xxx
32
1B0000h–1B7FFFh
SA62
110111xxx
32
1B8000h–1BFFFFh
SA63
111000xxx
32
1C0000h–1C7FFFh
SA64
111001xxx
32
1C8000h–1CFFFFh
SA65
111010xxx
32
1D0000h–1D7FFFh
SA66
111011xxx
32
1D8000h–1DFFFFh
SA67
111100xxx
32
1E0000h–1E7FFFh
SA68
111101xxx
32
1E8000h–1EFFFFh
SA69
111110xxx
32
1F0000h–1F7FFFh
SA70
111111xxx
32
1F8000h–1FFFFFh
Note: The address range is A20:A0 in word mode. The bank address bits are A20–A18.
Table 5.
Bottom Boot SecSi™ Sector Addresses
Device
Sector Address
A20–A12
Sector Size
(Words)
(x16)
Address Range
Am29DL320GB
000000xxx
128
00000h–00007Fh
September 19, 2003
Am49DL3208G
15
A D V A N C E
I N F O R M A T I O N
Sector/Sector Block Protection and
Unprotection
Table 7. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Tables
6 and 7).
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
Table 6.
Top Boot Sector/Sector Block Addresses
for Protection/Unprotection
Sector
A20–A12
Sector/
Sector Block Size
SA0
000000XXX
64 Kbytes
A20–A12
Sector/Sector Block
Size
SA70
111111XXX
64 Kbytes
SA69-SA67
111110XXX,
111101XXX,
111100XXX
192 (3x64) Kbytes
SA66-SA63
1110XXXXX
256 (4x64) Kbytes
SA62-SA59
1101XXXXX
256 (4x64) Kbytes
SA58-SA55
1100XXXXX
256 (4x64) Kbytes
SA54-SA51
1011XXXXX
256 (4x64) Kbytes
SA50-SA47
1010XXXXX
256 (4x64) Kbytes
SA46-SA43
1001XXXXX
256 (4x64) Kbytes
SA42-SA39
1000XXXXX
256 (4x64) Kbytes
SA38-SA35
0111XXXXX
256 (4x64) Kbytes
SA34-SA31
0110XXXXX
256 (4x64) Kbytes
SA30-SA27
0101XXXXX
256 (4x64) Kbytes
SA26-SA23
0100XXXXX
256 (4x64) Kbytes
SA22–SA19
0011XXXXX
256 (4x64) Kbytes
SA18-SA15
0010XXXXX
256 (4x64) Kbytes
SA14-SA11
0001XXXXX
256 (4x64) Kbytes
SA10-SA8
000011XXX,
000010XXX,
000001XXX
192 (3x64) Kbytes
000001XXX,
000010XXX
000011XXX
192 (3x64) Kbytes
SA4–SA7
0001XXXXX
256 (4x64) Kbytes
SA8–SA11
0010XXXXX
256 (4x64) Kbytes
SA12–SA15
0011XXXXX
256 (4x64) Kbytes
SA16–SA19
0100XXXXX
256 (4x64) Kbytes
SA7
000000111
8 Kbytes
SA20–SA23
0101XXXXX
256 (4x64) Kbytes
SA6
000000110
8 Kbytes
000000101
8 Kbytes
SA1–SA3
16
Sector
SA24–SA27
0110XXXXX
256 (4x64) Kbytes
SA5
SA28–SA31
0111XXXXX
256 (4x64) Kbytes
SA4
000000100
8 Kbytes
000000011
8 Kbytes
SA32–SA35
1000XXXXX
256 (4x64) Kbytes
SA3
SA36–SA39
1001XXXXX
256 (4x64) Kbytes
SA2
000000010
8 Kbytes
SA40–SA43
1010XXXXX
256 (4x64) Kbytes
SA1
000000001
8 Kbytes
SA0
000000000
8 Kbytes
SA44–SA47
1011XXXXX
256 (4x64) Kbytes
SA48–SA51
1100XXXXX
256 (4x64) Kbytes
SA52–SA55
1101XXXXX
256 (4x64) Kbytes
SA56–SA59
1110XXXXX
256 (4x64) Kbytes
SA60–SA62
111100XXX,
111101XXX,
111110XXX
192 (4x64) Kbytes
SA63
111111000
8 Kbytes
SA64
111111001
8 Kbytes
SA65
111111010
8 Kbytes
SA66
111111011
8 Kbytes
SA67
111111100
8 Kbytes
SA68
111111101
8 Kbytes
SA69
111111110
8 Kbytes
SA70
111111111
8 Kbytes
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously protected
sectors must be individually re-protected. To change
data in protected sectors efficiently, the temporary
sector un protect function is available. See “Temporary
Sector Unprotect”.
Sector Protection/Unprotection requires V ID on the
RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 2
shows the algorithms and Figure 28 shows the timing
diagram. This method uses standard microprocessor
bus cycle timing. For sector unprotect, all unprotected
sectors must first be protected prior to the first sector
unprotect write cycle. Note that the sector unprotect
algorithm unprotects all sectors in parallel. All previ-
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
ously protected sectors must be individually re-protected. To change data in protected sectors efficiently,
the temporary sector unprotect function is available.
See “Temporary Sector Unprotect”.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See the Sector/Sector Block
Protection and Unprotection section for details.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using VID. This function is one of two provided by the
WP#/ACC pin.
Temporary Sector Unprotect
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
6).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 27 shows the timing diagrams, for this feature.
If the WP#/ACC pin is at VIL, sectors 0, 1, 69, and 70
will remain protected during the Temporary sector Unprotect mode.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
“outermost” 8 Kbyte boot sectors independently of
whether those sectors were protected or unprotected
using the method described in “Sector/Sector Block
Protection and Unprotection”. The two outermost 8
Kbyte boot sectors are the two sectors containing the
lowest addresses in a top-boot-configured device, or
the two sectors containing the highest addresses in a
top-boot-configured device.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8 Kbyte boot
sectors were last set to be protected or unprotected.
That is, sector protection or unprotection for these two
sectors depends on whether they were last protected
or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”.
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0 and 1 (bottom boot) or 69 and 70 (top boot)
will remain protected).
2. All previously protected sectors are protected once
again.
Figure 1.
September 19, 2003
Am49DL3208G
Temporary Sector Unprotect Operation
17
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Protect another
sector?
PLSCNT
= 1000?
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Sector Protect
complete
No
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Set up
next sector
address
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
18
In-System Sector Protect/Unprotect Algorithms
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
SecSi™ (Secured Silicon) Sector
Flash Memory Region
addresses 000008h–00000Fh. The device is available
preprogrammed with one of the following:
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and
uses a SecSi Sector Indicator Bit (DQ7) to indicate
whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.
■ A random, secure ESN only
AMD offers the device with the SecSi Sector either
fac t or y l ocke d or c u s t om e r l o ckabl e. T he fac tory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize the that
sector in any manner they choose. The customer-lockable version has the SecSi (Secured Silicon) Sector
Indicator Bit permanently set to a “0.” Thus, the SecSi
Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the SecSi Sector Secure
through a command sequence (see “Enter SecSi™
Sector/Exit SecSi Sector Command Sequence”). After
the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by
using the addresses normally occupied by the boot
sectors. This mode of operation continues until the
system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of
Sector 0.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is preprogrammed with both a random number
and a secure ESN. The 8-word random number will at
addresses 000000h–000007h in word mode. The secure ESN will be programmed in the next 8 words at
September 19, 2003
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s
factory with the SecSi Sector permanently locked.
Contact an AMD representative for details on using
AMD’s ExpressFlash service.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
If the security feature is not required, the SecSi Sector
can be treated as an additional Flash memory space.
The SecSi Sector can be read any number of times,
but can be programmed and locked only once. Note
that the accelerated programming (ACC) and unlock
bypass functions are not available when programming
the SecSi Sector.
The SecSi Sector area can be protected using one of
the following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
Am49DL3208G
19
A D V A N C E
I N F O R M A T I O N
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#f
or WE# do not initiate a write cycle.
START
RESET# =
VIH or VID
Wait 1 µs
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
Logical Inhibit
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Write cycles are inhibited by holding any one of OE# =
VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle,
CE#f and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
Remove VIH or VID
from RESET#
If WE# = CE#f = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Write reset
command
COMMON FLASH MEMORY INTERFACE
(CFI)
SecSi Sector
Protect Verify
complete
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Tables 12 and 13
for command definitions). In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
20
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The
system can read CFI information at the addresses
given in Tables 8–11. To terminate reading CFI data,
the system must write the reset command.The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Am49DL3208G
September 19, 2003
A D V A N C E
Table 8.
I N F O R M A T I O N
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
September 19, 2003
Description
Am49DL3208G
21
A D V A N C E
Table 9.
I N F O R M A T I O N
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 10.
Addresses
(Word Mode)
22
Addresses
(Byte Mode)
Description
Device Geometry Definition
Data
Description
N
27h
4Eh
0016h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Am49DL3208G
September 19, 2003
A D V A N C E
Table 11.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
8Ah
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Description
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800
mode
4Ah
94h
0038h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
4Fh
9Eh
000xh
September 19, 2003
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Am49DL3208G
23
A D V A N C E
I N F O R M A T I O N
FLASH COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Tables 12 and 13 define the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
may place the device in an unknown state. A reset
command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#f, whichever happens later. All data is latched
on the rising edge of WE# or CE#f, whichever happens first. Refer to the AC Characteristics section for
timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding ban k enters the erase-suspend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
section for more information. The Read-Only Operations table provides the read parameters, and Figure
16 shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
24
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur ns th a t ba nk to the e ra s e- s us pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Tables 12 and 13 show the address and data requirements. To determine sector protection information, the
system must write to the appropriate bank address
(BA) and sector address (SADD). Tables 2 and 4 show
the address range and bank number associated with
each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or embedded Erase algorithm.
Tables 12 and 13 show the address and data requirements for both command sequences. See also
“SecSi™
(Secured
Silicon)
Sector
Flash Memory Region” for further information. Note
that the ACC function and unlock bypass modes are
not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables 12 and 13 show the
address and data requirements for the byte program
command sequence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status
bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was success-
September 19, 2003
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Tables 12 and 13 show the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the read mode.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V HH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 4 illustrates the algorithm for the program operation. Refer to the Flash Erase and Program Operations table in the AC Characteristics section for
parameters, and Figure 20 for timing diagrams.
Am49DL3208G
25
A D V A N C E
I N F O R M A T I O N
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity. Note that the
SecSi Sector, autoselect, and CFI functions are unavailable when an erase operation in is progress.
START
Write Program
Command Sequence
Figure 5 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program Operations
tables in the AC Characteristics section for parameters, and Figure 22 section for timing diagrams.
Data Poll
from System
Embedded
Program
algorithm
in progress
Sector Erase Command Sequence
Verify Data?
No
Yes
Increment Address
No
Last Address?
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Yes
Programming
Completed
Note: See Tables 12 and 13 for program command
sequence.
Figure 4.
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Tables 12 and 13 show the
address and data requirements for the sector erase
command sequence.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Tables 12 and
13 show the address and data requirements for the
chip erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Flash Write Operation Status
section for information on these status bits.
After the command sequence is written, a sector erase
time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode. The system must rewrite
the command sequence and any additional addresses
and commands. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when an erase
operation in is progress.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
26
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Flash Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity. Note that
the SecSi Sector, autoselect, and CFI functions are
unavailable when an erase operation in is progress.
Figure 5 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program Operations
tables in the AC Characteristics section for parameters, and Figure 22 section for timing diagrams.
Erase Suspend/Erase Resume
Commands
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Flash Write Operation Status section for
more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Sector/Sector Block Protection and Unprotection and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Flash Write Operation Status section for
information on these status bits.
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Tables 12 and 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
Erase Operation
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
September 19, 2003
Am49DL3208G
27
A D V A N C E
Table 12.
Read (Note 6)
Autoselect (Note 8)
Reset (Note 7)
Command Definitions
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
I N F O R M A T I O N
Addr
Data
1
RA
RD
First
Second
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
(BA)555
90
(BA)X00
0001
Device ID (Note 9)
4
555
AA
2AA
55
(BA)555
90
(BA)X01
7E
SecSi Sector Factory
Protect (Note 10)
4
555
AA
2AA
55
(BA)555
90
(BA)X03
0082/0002
Sector Protect Verify
(Note 11)
4
555
AA
2AA
55
(BA)555
90
(SADD)
X02
0000/0001
Sixth
Addr
Data
Addr
Data
(BA)
0E
0A
(BA)
0F
0000/
0001
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 12)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note
13)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SADD
30
Erase Suspend (Note 14)
1
BA
B0
Erase Resume (Note 15)
1
BA
30
CFI Query (Note 16)
1
55
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE#f pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE#f pulse, whichever happens first.
SADD = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
9. The device ID must be read across three cycles. The device ID is
00h for top boot and 01h for bottom boot.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
10. The data is 82h for factory locked and 02h for not factory locked.
11. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
5. Unless otherwise noted, address bits A20–A12 are don’t cares.
12. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
6. No unlock or command cycles required when bank is in read
mode.
13. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
7. The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. See the Autoselect Command Sequence section for
more information.
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
28
16. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 13 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still
invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for
byte mode) will appear on successive read cycles.
Table 13 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 24
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
START
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
DQ7 = Data?
No
No
September 19, 2003
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycles. Just prior to the completion of an
Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 (DQ7–DQ0
in byte mode) while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am49DL3208G
Figure 6. Data# Polling Algorithm
29
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 13 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 25 in
the “Flash AC Characteristics” section shows the toggle bit timing diagrams. Figure 26 shows the differences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II.
START
Table 13 shows the outputs for RY/BY#.
Read Byte
(DQ7–DQ0)
Address =VA
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
30
No
Am49DL3208G
Toggle Bit Algorithm
September 19, 2003
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE#f to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 13 to compare outputs for DQ2 and DQ6.
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 25 shows the toggle bit timing diagram. Figure
26 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for byte
mode) at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note
and store the value of the toggle bit after the first read.
After the second read, the system would compare the
new value of the toggle bit with the first. If the toggle bit
is not toggling, the device has completed the program
or erase operation. The system can read array data on
DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycle.
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
Table 13 shows the status of DQ3 relative to the other
status bits.
September 19, 2003
Am49DL3208G
31
A D V A N C E
Table 13.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
I N F O R M A T I O N
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
32
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . –65°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCCf/VCCs (Note 1) . . . . . . . . . . . .–0.5 V to +4.0 V
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
–2.0 V
WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V
20 ns
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 9.
2. Minimum DC input voltage on pins RESET#, and
WP# /ACC is –0 .5 V. D ur ing volt age trans itions,
WP#/ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 8. Maximum DC input
voltage on pin RESET# is +12.5 V which may overshoot
to +14.0 V for periods up to 20 ns. Maximum DC input
voltage on WP#/ACC is +9.5 V which may overshoot to
+12.0 V for periods up to 20 ns.
Figure 8. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
VCCf/VCCs Supply Voltages
VCCf/VCCs for standard voltage range . . 2.7 V to 3.3 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
September 19, 2003
Am49DL3208G
33
A D V A N C E
I N F O R M A T I O N
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
Typ
Max
Unit
±1.0
µA
ILR
Reset Leakage Current
VCC = VCC max; RESET# = 12.5 V
35
µA
ILIT
RESET# Input Load Current
VCC = VCC max; RESET# = 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
µA
ILIA
ACC Input Leakage Current
VCC = VCC max, WP#/ACC
= VACC max
35
µA
ICC1f
ICC2f
Flash VCC Active Read Current
(Notes 1, 2)
CE#f = VIL, OE# = VIH,
Byte Mode
5 MHz
10
1 MHz
2
4
CE#f = VIL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
Flash VCC Active Write Current (Notes 2, 3) CE#f = VIL, OE# = VIH, WE# = VIL
16
mA
15
30
mA
0.2
5
µA
ICC3f
Flash VCC Standby Current (Note 2)
VCCf = VCC max, CE#f, RESET#,
WP#/ACC = VCCf ± 0.3 V
ICC4f
Flash VCC Reset Current (Note 2)
VCCf = VCC max, RESET# = VSS ± 0.3 V,
WP#/ACC = VCCf ± 0.3 V
0.2
5
µA
ICC5f
Flash VCC Current Automatic Sleep Mode
(Notes 2, 4)
VCCf = VCC max, VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
ICC6f
Flash VCC Active Read-While-Program
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
Word
21
45
mA
ICC7f
Flash VCC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
Word
21
45
mA
ICC8f
Flash VCC Active
Program-While-Erase-Suspended Current
(Notes 2, 5)
CE#f = VIL, OE#f = VIH
17
35
mA
VIL
Input Low Voltage
–0.2
0.8
V
VIH
Input High Voltage
2.4
VCC + 0.2
V
VHH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
VID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOL = 4.0 mA, VCCf = VCCs = VCC min
IOH = –2.0 mA, VCCf = VCCs = VCC min
IOH = –100 µA, VCC = VCC min
Flash Low VCC Lock-Out Voltage (Note 5)
0.85 x
VCC
3. ICC active while Embedded Erase or Embedded Program is in
progress.
V
VCC–0.4
2.3
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
34
Min
2.5
V
4. Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.3 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 11.
September 19, 2003
Typical ICC1 vs. Frequency
Am49DL3208G
35
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
IIO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ VCC – 0.2 V, VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
3
5
mA
ICC2s
Average Operating Current
Cycle time = Min., IIO = 0 mA,
100% duty, CE1#s = VIL, CE2s =
VIH, VIN = VIL = or VIH
12
25
mA
VIL
Input Low Voltage
–0.2
(Note 3)
0.4
V
VIH
Input High Voltage
2.2
VCC+0.2
(Note 2)
V
VOL
Output Low Voltage
IOL = 2.0 mA
0.4
V
VOH
Output High Voltage
IOH = –1.0 mA
ISB
Standby Current (TTL)
CE1#s = VIH, CE2 = VIL, Other
inputs = VIH or VIL
0.3
mA
ISB1
Standby Current (CMOS)
CE1#s=VIH, CE2= VIL:
Other inputs = VIH or VIL:
tA = 85°C, VCC = 3.0 V
60
µA
ISB2
Standby Current (CMOS)
CE1#s=VIH, CE2= VIL:
Other inputs = VIH or VIL:
tA = 85°C, VCC = 3.3 V
85
µA
2.2
V
Notes:
1. TA= –40° to 85°C, otherwise specified.
2.
3.
4.
5.
36
Overshoot: VCC+1.0V if pulse width ≤ 20 ns.
Undershoot: –1.0V if pulse width ≤ 20 ns.
Overshoot and undershoot are sampled, not 100% tested.
Stable power supply required 200 µs before device operation.
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
55
ISB
CMOS
(µA)
50
45
40
2.7
2.8
2.9
VCC
Note:
At 70°, for reference only
2. Not 100% tested
1.
Sample Size of 5
Figure 12.
September 19, 2003
Standby Current ISB CMOS
Am49DL3208G
37
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 14.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
70, 85
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 13.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 14.
38
Input Waveforms and Measurement Levels
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Pseudo SRAM CE#s Timing
Parameter
Test Setup
JEDEC
Std
Description
—
tCCR
CE#s Recover Time
—
Min
All Speeds
Unit
0
ns
CE#f
tCCR
tCCR
tCCR
tCCR
CE1#s
CE2s
Figure 15. Timing Diagram for Alternating
Between Pseudo SRAM and Flash
September 19, 2003
Am49DL3208G
39
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Read-Only Operations
All Speed
Options
Parameter
JEDEC
Std.
Description
Test Setup
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
Unit
Min
70
ns
CE#f, OE# = VIL
Max
70
ns
OE# = VIL
Max
70
ns
Output Enable to Output Delay
Max
30
ns
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE#f or
OE#, Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
(Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 13 and Table 14 for test specifications
3. Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC/2. The time from OE# high to the
data bus driven to VCC/2 is taken as tDF
.
tRC
Addresses Stable
Addresses
tACC
CE#f
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 16.
40
Read Operation Timings
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#f, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#f, OE#
RESET#
tRP
Figure 17.
September 19, 2003
Reset Timings
Am49DL3208G
41
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Word Configuration
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tELFL/tELFH
CE#f to CIOf Switching Low or High
Max
5
ns
tFLQZ
CIOf Switching Low to Output HIGH Z
Max
16
ns
tFHQV
CIOf Switching High to Output Active
Min
70
ns
Data Output
(DQ14–DQ0)
Data Output
(DQ7–DQ0)
CE#f
OE#
CIOf
CIOf
Switching
from word
to byte
mode
tELFL
DQ0–DQ14
Address
Input
DQ15
Output
DQ15/A-1
tFLQZ
tELFH
CIOf
CIOf
Switching
from byte
to word
mode
Data Output
(DQ7–DQ0)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ14–DQ0)
DQ15
Output
tFHQV
Figure 18.
CIOf Timings for Read Operations
CE#f
The falling edge of the last WE# signal
WE#
CIOf
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 19.
42
CIOf Timings for Write Operations
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Flash Erase and Program Operations
Parameter
All Speed Options
Unit
Min
70
ns
Address Setup Time (WE# to Address)
Min
0
ns
tASO
Address Setup Time to OE# or CE#f Low During Toggle
Bit Polling
Min
15
ns
tAH
Address Hold Time (WE# to Address)
Min
45
ns
tAHT
Address Hold Time From CE#f or OE# High During Toggle
Bit Polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
Read
Min
0
ns
tOEH
OE# Hold Time
Toggle and Data# Polling
Min
10
ns
tOEPH
Output Enable High During Toggle Bit Polling
Min
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time (CE#f to WE#)
Min
0
ns
tELWL
tCS
CE#f Setup Time (WE# to CE#f)
Min
0
ns
tEHWH
tWH
WE# Hold Time (CE#f to WE#)
Min
0
ns
tWHEH
tCH
CE#f Hold Time (CE#f to WE#)
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
ns
tELEH
tCP
CE#f Pulse Width
Min
30
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Typ
7
µs
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
tWLAX
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
tVCS
VCCf Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time From RY/BY#
Min
0
ns
Program/Erase Valid To RY/BY# Delay
Max
90
ns
tBUSY
Word
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
September 19, 2003
Am49DL3208G
43
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#f
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
DOUT
Status
tBUSY
tRB
RY/BY#
VCCf
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 20.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 21.
44
tVHH
Accelerated Program Timing Diagram
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SADD
VA
555h for chip erase
tAH
CE#f
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCCf
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
2. These waveforms are for the word mode.
Figure 22.
September 19, 2003
Chip/Sector Erase Operation Timings
Am49DL3208G
45
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#f
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 23.
CE#f Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#f
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 24.
46
Data# Polling Timings (During Embedded Algorithms)
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#f
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 25.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 26.
September 19, 2003
DQ2 vs. DQ6
Am49DL3208G
47
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f
WE#
tRRB
tRSP
RY/BY#
Figure 27.
48
Temporary Sector Unprotect Timing Diagram
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
VID
VIH
RESET#
SADD,
A6, A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
Figure 28. Sector/Sector Block Protect and
Unprotect Timing Diagram
September 19, 2003
Am49DL3208G
49
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Parameter
All
Speed
Options
Unit
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
40
ns
tDVEH
tDS
Data Setup Time
Min
40
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
40
ns
tEHEL
tCPH
CE#f Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
7
µs
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
Word
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
50
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#f
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 29.
September 19, 2003
Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Am49DL3208G
51
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Power Up Time
When powering up the SRAM, maintain VCCs for 100 µs minimum with CE#1s at VIH.
Read Cycle
Parameter
Symbol
Speed
Description
Unit
55
70
tRC
Read Cycle Time
Min
55
70
ns
tAA
Address Access Time
Max
55
70
ns
tCO1, tCO2
Chip Enable to Output
Max
55
70
ns
tOE
Output Enable Access Time
Max
30
35
ns
tBA
LB#s, UB#s to Access Time
Max
55
70
ns
Chip Enable (CE1#s Low and CE2s High) to Low-Z
Output
Min
5
ns
tBLZ
UB#, LB# Enable to Low-Z Output
Min
5
ns
tOLZ
Output Enable to Low-Z Output
Min
5
ns
tHZ1, tHZ2
Chip Disable to High-Z Output
Max
20
25
ns
tBHZ
UB#s, LB#s Disable to High-Z Output
Max
20
25
ns
tOHZ
Output Disable to High-Z Output
Max
20
25
ns
tOH
Output Data Hold from Address Change
Min
tLZ1, tLZ2
10
ns
tRC
Address
tOH
Data Out
tAA
Data Valid
Previous Data Valid
Notes:
1. CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL
2. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 30.
52
Pseudo SRAM Read Cycle—Address Controlled
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Read Cycle
tRC
Address
tAA
tCO1
CE#1s
CE2s
tOH
tCO2
tHZ
tOE
OE#
tOLZ
tBLZ
Data Out
High-Z
tLZ
tOHZ
Data Valid
Notes:
1. WE# = VIH.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 31.
September 19, 2003
Pseudo SRAM Read Cycle
Am49DL3208G
53
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Write Cycle
Parameter
Symbol
Speed
Description
Unit
55
70
tWC
Write Cycle Time
Min
55
70
ns
tCw
Chip Enable to End of Write
Min
45
55
ns
tAS
Address Setup Time
Min
tAW
Address Valid to End of Write
Min
45
55
ns
tBW
UB#s, LB#s to End of Write
Min
45
55
ns
tWP
Write Pulse Time
Min
45
55
ns
tWR
Write Recovery Time
Min
0
Min
0
tWHZ
Write to Output High-Z
Max
25
tDW
Data to Write Time Overlap
Min
40
ns
tDH
Data Hold from Write Time
Min
0
ns
tOW
End Write to Output Low-Z
Min
5
ns
0
ns
ns
ns
tWC
Address
tWR
tCW
(See Note 1)
CE1#s
tAW
CE2s
tCW
(See Note 1)
tWP
(See Note 4)
WE#
Data In
tAS
(See Note 3)
tDW
High-Z
High-Z
Data Valid
tWHZ
Data Out
tDH
tOW
Data Undefined
Notes:
1. WE# controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 32.
54
Pseudo SRAM Write Cycle—WE# Control
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
tAS (See Note 2 ) tCW
(See Note 3)
tWR (See Note 4)
CE1#s
tAW
CE2s
tBW
UB#s, LB#s
tWP
(See Note 5)
WE#
tDW
tDH
Data Valid
Data In
Data Out
High-Z
High-Z
Notes:
1. CE1#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE1#s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 33.
September 19, 2003
Pseudo SRAM Write Cycle—CE1#s Control
Am49DL3208G
55
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
tCW
(See Note 2)
CE1#s
tWR (See Note 3)
tAW
tCW (See Note 2)
CE2s
UB#s, LB#s
tBW
tAS
(See Note 4)
WE#
tWP
(See Note 5)
tDW
Data In
Data Out
tDH
Data Valid
High-Z
High-Z
Notes:
1. UB#s and LB#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 34. Pseudo SRAM Write Cycle—
UB#s and LB#s Control
56
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
FLASH ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Chip Erase Time
28
Excludes 00h programming
prior to erasure (Note 4)
Accelerated Word Program Time
4
120
µs
Word Program Time
7
210
µs
14
42
sec
Chip Program Time
(Note 3)
Word Mode
sec
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
12 and 13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Input Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
11
14
pF
VOUT = 0
12
16
pF
COUT
Output Capacitance
CIN2
Control Pin Capacitance
VIN = 0
14
16
pF
CIN3
WP#/ACC Pin Capacitance
VIN = 0
17
20
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
September 19, 2003
Am49DL3208G
57
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
TLB069—69–Ball Fine-Pitch Grid Array 8 x 10 mm
D1
A
D
eD
0.15 C
10
(2X)
9
8
SE 7
7
6
E
E1
5
4
eE
3
2
1
K
INDEX MARK
PIN A1
CORNER
J
H
B
10
TOP VIEW
G
F
E
D
C B
A
PIN A1
CORNER
7
SD
0.15 C
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
69X
0.15
0.08
0.08 C
SIDE VIEW
6
b
M C A B
M C
NOTES:
PACKAGE
TLB 069
JEDEC
10.00 mm X 8.00 mm PACKAGE
SYMBOL
A
MIN.
---
NOM.
---
1.20
0.20
---
---
A2
0.81
---
0.97
D
NOTE
MAX.
A1
10.00 BSC
PROFILE
BALL HEIGHT
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX IN THE "D" DIRECTION.
n IS THE NUMBER OF POPULATED SOLDER BALL
POSITIONS FOR MATRIX SIZE MD X ME.
8.00 BSC
BODY SIZE
7.20 BSC
MATRIX FOOTPRINT
MATRIX FOOTPRINT
E1
7.20 BSC
MD
10
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
n
69
BALL COUNT
0.33
---
SYMBOL "ME" IS THE BALL MATRIX IN THE "E" DIRECTION.
BODY SIZE
E
eE
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
BODY THICKNESS
D1
Ob
1.
N/A
0.43
0.80 BSC
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7.
SD AND SE ARE MEASURED WITH RESPECT TO
DATUMS A AND B AND DEFINE THE POSITION OF THE
CENTER SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS
IN THE OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS
IN THE OUTER ROW, SD OR SE = E/2
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD/SE
0.40 BSC
SOLDER BALL PLACEMENT
A2,A3,A4,A7,A8,A9,B2,B9,B10
C1,C10,D1,D10,E5,E6,F5,F6
G1,G10,H1,H10
J1,J2,J9,J10,K2,K3,K4,K7,K8,K9
6.
DEPOPULATED SOLDER BALLS
8.
"+" INDICATES THE THEORETICAL CENTER OF
DEPOPULATED BALLS.
9.
NOT USED.
10. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER
OR INK MARK, METALLIZED MARK INDENTATION OR
OTHER MEANS.
w052903-163814C
58
Am49DL3208G
September 19, 2003
A D V A N C E
I N F O R M A T I O N
REVISION SUMMARY
Revision A (July 21, 2003)
Revision A+1 (September 19, 2003)
Initial release.
Connection Diagram
Modified G9 Vcc ball to G9 BYTE#*. Added note.
Publication No.
Corrected publication number.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companie
September 19, 2003
Am49DL3208G
59
Representatives in U.S. and Canada
Sales Offices and Representatives
North America
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0
CALIFORNIA,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7
NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7
TEXAS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2
BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0
JAPAN,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 7 6 - 8 0 3 1 0 0
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
es
ARIZONA,
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0
Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1
COLORADO,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2
MASSACHUSETTS,
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8
NEW JERSEY,
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4
NEW YORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0
VIRGINIA,
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8
PUERTO RICO,
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA