DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 FEATURES PINNING • Low current (max. 200 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose industrial applications. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18 metal package. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCY70 − −50 V BCY71 − −45 V BCY70 − −40 V BCY71 − −45 V collector-emitter voltage open base ICM peak collector current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C − 350 mW hFE DC current gain IC = −10 mA; VCE = −1 V 100 − fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − 1997 Jul 11 2 MHz Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCY70 − −50 V BCY71 − −45 V BCY70 − −40 V BCY71 − −45 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −200 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA open collector Ptot total power dissipation − 350 mW Tstg storage temperature Tamb ≤ 25 °C −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 500 K/W Rth j-c thermal resistance from junction to case 150 K/W 1997 Jul 11 3 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER hFE hFE VCEsat MAX. UNIT IE = 0; VCB = −50 V − −20 nA IE = 0; VCB = −50 V; Tj = 100 °C − −5 µA collector cut-off current BCY71 IEBO MIN. collector cut-off current BCY70 ICBO CONDITIONS emitter cut-off current DC current gain IE = 0; VCB = −45 V − −20 nA IE = 0; VCB = −45 V; Tj = 100 °C − −5 µA IC = 0; VEB = −4 V − −10 nA IC = 0; VEB = −4 V; Tj = 100 °C − −2 µA IC = 0; VEB = −5 V − −500 nA VCE = −1 V IC = −10 µA 60 − IC = −0.1 mA 80 − IC = −1 mA 100 − IC = −50 mA 45 − BCY70 100 − BCY71 − 500 DC current gain collector-emitter saturation voltage IC = −10 mA; VCE = −1 V IC = −10 mA; IB = −1 mA − −250 mV IC = −50 mA; IB = −5 mA − −500 mV IC = −10 mA; IB = −1 mA −600 −900 mV VBEsat base-emitter saturation voltage IC = −50 mA; IB = −5 mA − −1.2 V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 6 pF Ce emitter capacitance IC = ic = 0; VEB = −1 V; f = 1 MHz − 8 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 6 dB − 2 dB BCY70 BCY71 Switching times (between 10% and 90% levels) BCY70 ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 65 ns td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 500 ns ts storage time − 420 ns tf fall time − 80 ns 1997 Jul 11 4 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Jul 11 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 5 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 11 6 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 NOTES 1997 Jul 11 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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