ERA32 (1.0A) ( 100 to 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability Voltage class Applications Cathode mark 70 Lot No. A32 02 Abridged type name High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating -01 -02 Unit Repetitive peak reverse voltage VRRM 100 200 V Non-repetitive peak reverse voltage VRSM 100 200 V Average forward current IF(AV) Resistive load (Ta =40°C) Surge current IFSM Sine wave 10ms Operating junction temperature Storage temperature 1.0 A 40 A Tj -40 to +150 °C Tstg -40 to +150 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=1.0A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A Max. -01 -02 V 0.92 10 50 100 Unit µA ns ERA32(1.0A) (100V to 200V / 1.0A ) Characteristics Forward characteristics Reverse characteristics 30 5 3 10 5 IF 1.0 [A] IR [µA] 0.5 0.3 3 1.0 0.5 0.1 0.3 0.05 0.03 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 VF [V] 200 VR [V] Current derating (IF(AV)-Ta) Junction capacitance characteristics 100 1.4 50 1.2 1.0 30 Cj [pF] IF(AV) 0.8 [A] 0.6 10 0.4 0.2 5 0 3 0 20 40 60 80 100 120 140 10 30 50 100 300 VR [V] Ta [°C] Surge capability 100 50 30 IFSM [A] 10 5 3 1 3 5 10 30 [time] (at 50Hz) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com