ERA34 (0.1A) ( 1000V / 0.1A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion High voltage by mesa design Marking Color code : Green High reliability 10 Applications Voltage class Lot No. 4 0 General purpose rectifier applications Cathode mark Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating -10 Unit 1000 V Repetitive peak reverse voltage VRRM Average forward current IF(AV) Resistive load (Ta=60°C) 0.1 A Surge current IFSM Sine wave 10ms 2.0 A Operating junction temperature Tj -40 to +140 °C Storage temperature Tstg -40 to +140 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VFM IFM=0.1A 3 V Reverse current IRRM VR=VRRM 50 µA Reverse recovery time t rr IF=0.1A, IR=0.1A 0.15 µs ERA34(0.1A) (1000V / 0.1A ) Characteristics Forward characteristics Reverse characteristics 3 1.0 1 0.5 0.3 0.5 IF [A] IR [µA] 0.1 0.05 0.03 0.1 0.05 0.01 0.03 0.005 0.003 0.01 0 1.0 2.0 0 3.0 200 400 600 VF [V] 800 1000 1200 1400 VR [V] Junction capacitance characteristics Current derating (IF(AV)-Ta) 0.14 30 0.12 0.10 10 Cj [pF] 5 0.08 IF(AV) [A] 0.06 3 0.04 0.02 0 1 0 20 40 60 80 100 120 140 10 30 50 100 200 VR [V] Ta [°C] Surge capability 3 1 IFSM [A] 0.5 0.3 0.1 1 3 5 10 30 [time] (at 50Hz) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com