ETC ERB32-02

ERB32 (1.2A)
( 100 to 200V / 1.2A )
Outline drawings, mm
FAST RECOVERY DIODE
ø4.0
ø0.8
7.5
28 MIN.
Features
28 MIN.
Marking
Super high speed switching
Low VF in turn on
Color code : Orange
High reliability
B32 02
Abridged type name
Voltage class
Applications
70
Lot No.
High speed switching
Cathode mark
Lot No.division mark
···
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
-01
-02
Unit
Repetitive peak reverse voltage
VRRM
100
200
V
Non-repetitive peak reverse voltage
VRSM
100
200
V
Average forward current
IF(AV)
Resistive load (Ta =40°C)
Surge current
IFSM
Sine wave 10ms
Operating junction temperature
Storage temperature
1.2
A
50
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=1.2A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
Max.
-01
-02
V
0.92
10
50
100
Unit
µA
ns
ERB32(1.2A)
(100V to 200V / 1.2A )
Characteristics
Reverse characteristics
Forward characteristics
5
3
IF
10
IR
1.0
[A]
[µA]
1
0.5
0.3
0.1
0.1
0.05
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
100
VF [V]
200
300
VR [V]
Current derating (IF(AV)-Ta)
Junction capacitance characteristics
100
1.4
50
1.2
1.0
30
Cj
[pF]
IF(AV) 0.8
[A]
0.6
10
0.4
0.2
5
0
3
0
20
40
60
80
100
120
10
140
Ta [°C]
30
50
100
300
VR [V]
Surge capability
100
50
30
IFSM
[A]
10
5
3
1
3
5
10
30
[time] (at 50Hz)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com