ERB32 (1.2A) ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications 70 Lot No. High speed switching Cathode mark Lot No.division mark ··· Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating -01 -02 Unit Repetitive peak reverse voltage VRRM 100 200 V Non-repetitive peak reverse voltage VRSM 100 200 V Average forward current IF(AV) Resistive load (Ta =40°C) Surge current IFSM Sine wave 10ms Operating junction temperature Storage temperature 1.2 A 50 A Tj -40 to +150 °C Tstg -40 to +150 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=1.2A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A Max. -01 -02 V 0.92 10 50 100 Unit µA ns ERB32(1.2A) (100V to 200V / 1.2A ) Characteristics Reverse characteristics Forward characteristics 5 3 IF 10 IR 1.0 [A] [µA] 1 0.5 0.3 0.1 0.1 0.05 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 VF [V] 200 300 VR [V] Current derating (IF(AV)-Ta) Junction capacitance characteristics 100 1.4 50 1.2 1.0 30 Cj [pF] IF(AV) 0.8 [A] 0.6 10 0.4 0.2 5 0 3 0 20 40 60 80 100 120 10 140 Ta [°C] 30 50 100 300 VR [V] Surge capability 100 50 30 IFSM [A] 10 5 3 1 3 5 10 30 [time] (at 50Hz) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com