ERB35 (1A) ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 70 B35 -02 ··· Abridged type name Cathode mark Maximum ratings and characteristics Absolute maximum ratings Item Symbol Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Operating junction temperature Storage temperature Conditions Rating -02 200 Unit V Square wave, duty=1/2, 1.0 Ta =25°C Sine wave 10ms A 30 A Tj -40 to +150 °C Tstg -40 to +150 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=1.0A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A Max. 1.1 Unit V 10 µA 100 ns ERB35(1A) (200V / 1A ) Characteristics Forward characteristics Reverse characteristics 10 100 5 50 3 30 IF [A] IR 1.0 [µA] 0.5 10 5 0.3 3 0.1 1 0.05 0.5 0.3 0.03 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 VR [V] VF [V] Current derating (IF(AV)-Ta) Junction capacitance characteristics 1.4 50 1.2 1.0 30 Cj [pF] IF(AV) 0.8 [A] 10 0.6 0.4 5 0.2 3 0 0 20 40 60 80 100 120 140 Ta [°C] 10 30 50 100 300 VR [V] Surge capability 100 50 30 IFSM [A] 10 5 3 1 1 3 5 10 30 100 [time] (at 50Hz) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com